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拉脱法测量液体表面张力系数实验中,采用薄壁(0.6 mm)吊环和标准(1.0 mm)吊环,测量值相对稳定;但对于较厚壁(1.5,2.0,2.5 mm)吊环,每次测量值差别很大.通过手机拍摄视频,对不同时刻的液膜形状进行理论和实验分析,发现测量值不稳定的主要原因是颈缩突变,即拉伸过程中,液膜收缩从吊环外壁突变到内壁的程度不同,导致后续液膜断裂点的位置相差非常大,造成测量值的起伏不定.因此需将吊环平均直径替换为断裂时的液膜直径,对测量值进行修正.结果表明:修正后的表面张力系数与理论值的误差减小到了4.0%以内,验证了理论分析的正确性. 相似文献
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a-Si:H/SiO_2 multilayers were prepared by alternatively changing plasma enhanced chemical vapour deposition of a-Si:H layers and in situ plasma oxidation process. Subsequently, as-grown samples were annealed at temperatures from 350℃ to 1100℃ in N_2 ambient with an increment of 100℃. The evolution of bonding configurations and structures with annealing treatments was systematically investigated by Fourier-transform infrared spectroscopy. The peak position of Si-O stretching vibration of SiO_2 layers shift to 1087cm^{-1} after annealing at 1100℃, which demonstrates that the SiO_2 films fabricated by plasma oxidation after high temperature annealing can have similar properties to the thermal grown ones. A Si-O vibration from interfacial SiO_x was identified: the value x was found to increase as increasing the annealing temperature, which is ascribed to the cooperation of hydrogen effusion and reordering of the oxygen bond in SiO_x networks. The H-related bonds were observed in the form of H-Si-O_3 and H-Si-Si_{3-n}O_n (n=1-2) configurations, which are supposed to be present in SiO_2 and interfacial SiO_x layers, respectively. The H atoms bonded in different bonding configurations effuse at different temperatures due to their different desorption energies. 相似文献
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