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Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure. 相似文献
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采用射频磁控溅射的方法,在Si(100)基片上制备了纳米β-FeSi2/Si多层结构,利用X射线衍射、透射电子显微镜、光致发光光谱等表征技术,研究了β-FeSi2/Si多层结构的结构、成分和光致发光特性.研究结果表明:利用磁控溅射法得到的Fe/Si多层膜,室温下能够检测到β-FeSi2的1.53 μm处光致发光信号;未退火时多层膜是(非晶的FeSi2+β-FeSi2颗粒)/非晶Si结构,退火后则是β-FeSi2颗粒/(晶体Si+非晶Si)结构;退火前后样品有相同的PL信号强度,说明非晶的FeSi2+β-FeSi2颗粒和β-FeSi2颗粒可以产生同样的发光性能.实验测出1.53 μm处PL信号也进一步证明了非晶FeSi2的半导体性能. 相似文献
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采用射频磁控溅射的方法,在Si(100)基片上制备了纳米β-FeSi2/Si多层结构,利用X射线衍射、透射电子显微镜、光致发光光谱等表征技术,研究了β-FeSi2/Si多层结构的结构、成分和光致发光特性.研究结果表明:利用磁控溅射法得到的Fe/Si多层膜,室温下能够检测到β-FeSi2的1.53 μm处光致发光信号;未退火时多层膜是(非晶的FeSi2+β-FeSi2颗粒)/非晶Si结构,退火后则是
关键词:
2')" href="#">β-FeSi2
磁控溅射
XRD
光致发光光谱 相似文献
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利用GaAs量子阱中г谷束缚态与AlAs层中X谷束缚态在异质结界面处的共振г-X混合,使得光生电子不仅在实空间而且在K窨 与光生空穴分离开来,从而在结构中形成了持久的电荷极化。这一效应已被C-V特性上所观察到的电容阶跃和正反扫描时所出现的双稳滞迟现象所证实。如果将我们的器件用作光存储单元,预期可以获得很长的存储时间Ts。同时,由于г-X混合隧穿速率很快,光子“读出”仍可以保持很快。 相似文献
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用2-氨基-5-巯基-1,3,4-噻二唑乙酸(Hatma)为配体合成出一种金属锌配合物[Zn(atma)2]n,其结构通过IR、TGA、元素分析和X-射线单晶衍射法确定。从结构中看出,配合物通过π-π作用、分子间氢键作用和基团间的嵌合作用,由二维层状结构自组装形成一个三维的超分子骨架。电化学研究表明配合物中的Zn2+/Zn+对的氧化还原是一个不可逆过程。抗菌试验表明,该配合物比配体表现出更好的生物活性。 相似文献
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A novel sodium holmium carboxylate compound,namely Na 4 Ho 4 (μ 3-OH) 4 (1,4BDC) 6 ·6.25H 2 O (1,1,4-BDC=1,4-benzenedicarboxylate),has been solvothermally synthesized and structurally characterized.The structure features a two-fold interpenetrated three-dimensional open-framework constructed by the [Ho 4 (μ 3-OH) 4 ] 8+ clusters bridged by 1,4-BDC ligands.The Na + ions and lattice water molecules are located in the channels.The structure is further stabilized by hydrogen-bonding and π-π stacking interactions.The thermal stability of the compound has been investigated via thermogravimetric analysis. 相似文献