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Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature 下载免费PDF全文
This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 C.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions. 相似文献
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Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber 下载免费PDF全文
This paper studies boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment. 相似文献
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采用直流脉冲磁控溅射方法,在室温下生长氢化Ga掺杂ZnO薄膜(GZO/H),并通过湿法后腐蚀技术获得绒面结构.研究了室温下H2流量对薄膜结构、光电性能及表面形貌的影响.实验表明,氢化GZO(GZO/H)薄膜具有良好的(002)晶面择优取向生长,引入适当流量的H2可以有效提高薄膜的电学特性,GZO/H薄膜具有更低的电阻率以及较高的迁移率和载流子浓度.当通入H2流量为6 sccm时,薄膜电阻率为6.8 ×10-4 Ω·cm,Hall迁移率达34.2 cm2/Ⅴ·s,制备的GZO/H薄膜可见光区域平均透过率优于85%.此外,研究了H2流量对湿法腐蚀后绒面GZO/H薄膜表面形貌的影响,提出了一种薄膜绒面结构形成过程模型. 相似文献
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Influence of local environment on the intensity of the localized surface plasmon polariton of Ag nanoparticles 下载免费PDF全文
A combined Ag nanoparticle with an insulating or conductive layer structure has been designed for molecular detection using surface enhanced Raman scattering microscopy.Optical absorption studies revealed localized surface plasmon resonance,which shows regular red shift with increasing environmental dielectric constant.With the combined structure of surface enhanced Raman scattering substrates and rhodamine 6G as a test molecule,the results in this paper show that the absorption has a linear relationship with the local electromagnetic field for insulating substrates,and the electrical property of the substrate has a non-negligible effect on the intensity of the local electromagnetic field and hence the Raman enhancement. 相似文献
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薄膜太阳电池的研究进展 总被引:23,自引:0,他引:23
介绍了薄膜太阳电池在光伏技术中的位置,详细叙述了非晶硅,铜铟锡,碲化镉等主要薄膜太阳电池的基本结构,制造方法,研究进展和现状,指出了存在的关键问题和解决的途径,并介绍了薄膜太阳电池的发展趋势和应用前景。 相似文献
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Al2O3介质薄膜与纳米Ag颗粒构成的复合结构,被应用于表面增强Raman散射探测实验中,其中Al2O3介质薄膜对纳米Ag颗粒的吸收谱及增强Raman散射光谱的影响被特别关注.该复合结构的光学特性表征出纳米Ag颗粒的偶极振荡特性.从光吸收谱中可以看到,其共振吸收谱随Al2O3介质薄膜厚度增加而在整个谱域上发生红移,表明纳米Ag颗粒的周围介电常数随Al2O3介质薄膜厚度的增加而增大.采用罗丹明6G作为探针原子,6个Raman特征峰的平均增益值作为表征表面增强Raman散射衬底增益程度的量度.实验结果表明,Al2O3介质薄膜层的引入提高了纳米Ag颗粒的衬底介电常数,并引起了散射共振的增强,从而使表面增强Raman散射强度提高. 相似文献
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采用RF-PECVD技术,通过改变反应气体的硅烷浓度制备了一系列不同晶化率不掺杂的硅薄膜材料,研究了工艺变化对材料结构的影响及材料光电特性同微结构的关系.随后进行了光衰退试验,在分析光照前后光电特性变化规律的基础上,认为材料中的非晶成分是导致材料光电特性衰退的主要原因.在靠近过渡区非晶一侧的硅材料比普通非晶硅稳定,衰退率较少;高晶化率微晶硅材料性能稳定,基本不存在光衰退;在靠近过渡区微晶一侧的硅材料虽然不是完全不衰退,但相比高晶化率硅材料来说更适合制备高效微晶硅电池.
关键词:
射频等离子体增强化学气相沉积
硅薄膜
Staebler-Wronski(SW)效应
稳定性 相似文献
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采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池.电池的J-V测试结果表明:在实验的硅烷浓度和功率范围内,随硅烷浓度的降低和功率的加大,对应电池的开路电压逐渐变小;硅烷浓度的不同对电池的短路电流密 度有很大的影响,但功率的影响在实验研究的范围内不是很显著.对于微晶硅电池,N层最好 是非晶硅,这是因为一方面可以降低对电流的横向收集效应,另一方面也降低了电池的漏电概率,提高了电池的填充因子.
关键词:
微晶硅太阳电池
甚高频等离子体增强化学气相沉积 相似文献