Xe8+离子双电子复合速率系数的理论研究

利用基于全相对论组态相互作用理论的FAC程序包, 详细研究了温度在0.1~1650 eV范围内Xe8+离子的双电子复合(DR)过程。 通过比较4s, 4p和4d壳层电子激发的双电子复合速率系数, 发现温度在10 eV以上时, 内壳层4p电子激发的双电子复合速率数对总双电子复合速率系数有很重要的贡献, 而4s电子激发对总双电子复合速率数贡献小于7.5%。 给出了△n=0, 1和2 三类芯激发对总双电子复合速率系数的贡献以及自由电子俘获到不同主量子数的双电子复合速率系数, 发现△n=2的芯激发和n′＞15的DR速率系数对总DR速率系数的贡献也很重要。 进一步给出了△n=0, 1和2 三类芯激发和总DR速率系数的拟合参数, 拟合结果和计算值符合, 偏差小于1%。 通过对双电子复合、 辐射复合以及三体复合速率系数的比较得知, 在温度高于1 eV时, DR过程是Xe8+离子的主要复合过程。Based on the fully relativistic configuration interaction method, theoretical calculations are carried out for the dielectronic recombination (DR) rate coefficients of Xe8+ ions in the temperature region from 0.1 to 1 650 eV. The comparison of the DR rate coefficients from 4s, 4p and 4d subshell excitations shows that 4d subshell excitation dominates in the whole temperature region. The contribution from 4p subshell excitation is very important at temperature above 10 eV and the contributions from 4s subshell excitation is lower than 7.5% in the whole temperature region. Similarly, the comparison of the DR rate coefficients through △n=0, 1 and 2 core excitation shows that the contribution from △n=2 core excitation can not be neglected, the contributions from n′＞15 can also not be neglected. The DR rate coefficients of △n=0, 1 and 2 core excitation and the total DR rate coefficients are fitted with some parameters, which are in good agreement with theoretical calculations values (within 1% difference). The total DR rate coefficients are greater than radiative recombination (RR) and three body recombination (TBR) rate coefficients at temperature above 1 eV. Therefore, the DR process can strongly influence the ionization balance of laser produced xenon plasmas.     

类氦离子的KLL双电子复合过程的相对论理论研究

在相对论多组态Dirac-Fock理论基础上，发展了计算双电子复合截面的程序.并以类锂C³⁺，Ar¹⁵⁺，Kr³³⁺和U⁸⁹⁺等离子为例，详细计算了共振双激发态1s2l2l′的辐射衰变率、Auger衰变率及相应的双电子复合截面.对于C⁴⁺，Ar^l6+和Kr³⁴⁺离子的结果与已有的计算和实验结果都能很好地符合；对于U⁹⁰⁺离子，则重点 关键词： 双电子复合 截面 MCDF     

高离化类Ne铕离子的双电子伴线结构的理论研究

在对高离化态类Ne铕离子及其临近的类Na、类Mg离子的n=3→2跃迁的波长和强度详细计算的基础上，考虑了等离子体中单个谱线的展宽和谱线之间的重叠，得到了类Ne铕离子n=3→2的共振线及其类Na和类Mg离子双电子伴线的结构，并系统地分析了这些伴线对共振线波长和强度的影响.     

Dielectronic Recombination of Sn^10＋ Ions and Related Satellite Spectra

Based on the multi-configuration Dirac-Fock method, theoretical calculations are carried out for the dielectronic recombination （DR） rate coefficients and the collision excitation rate coefficients of Sn^10＋ ions. It is found that the total DR rate coefficient has its maximum value between 10eV and 100eV and is greater than either the radiative recombination or three-body recombination rate coefficients （the number of free electrons per unit is 10^21 cm^3） for the ease of Te 〉 1 eV. Therefore, DR can strongly influence the ionization balance of laser produced multi-charged tin ions. The related dieleetronie satellite cannot be ignored at low temperature Te 〈 5 eV.     

类铷W37+离子双电子复合速率系数的理论研究

 利用全相对论组态相互作用理论方法,研究了类铷W³⁷⁺离子从基组态3s²3p⁶3d¹⁰4s²4p⁶4d经过双激发态(3s²3p⁶3d¹⁰4s²4p⁶4d)^-1nln′l′(n,n′=4,5)的双电子复合过程,得到了该离子在温度为1~5×10⁴ eV范围内的总双电子复合速率系数。分析比较了不同电子激发的双电子复合速率系数,结果表明:4p电子激发的双电子复合速率系数在低温时给出了主要贡献,而3d的贡献在高温时突出。由于强组态相互作用,两电子一光子跃迁对双电子复合速率系数的贡献不可忽略,其中辐射跃迁4p⁵4d5d5f-4p⁶4f5d的贡献是双激发态4p⁵4d5d5f总的双电子复合速率系数的5%。对双电子复合、辐射复合以及三体复合速率系数的比较表明,在所研究的温度范围内双电子复合速率系数最大。     

高n双电子复合伴线对类氦镁离子 Kα共振线贡献的理论计算

利用多组态Dirac-Fock方法计算了类氦镁离子的双电子复合截面.分析了类氦镁离子的高n双电子伴线结构及其对类氦镁离子Kα共振线的影响.结果表明类氦镁离子的高n双电子伴线几乎都分布于Kα共振线的长波一侧.随着n的增加,DS强度呈现明显减小的趋势.虽然来自KLM(n=3)的发射线最强,但n>3的部分依然给出了非常重要的贡献.即便是来自n>10的共振的贡献也是不可忽略的.并且高n双电子伴线随着n的增加不断接近Kα共振线,导致和Kα共振线的强烈混合.在实验测量中会使Kα共振线峰位的测量值向长波方向移动,使谱形加宽,并且增强了Kα共振线测量值强度.     

30MeV/u 40Ar+natAg反应中中等质量碎片的发射源

在6°─110°范围内测量了30MeV/u的⁴⁰Ar轰击^natAg靶产生的中等质量碎片(3≤Z≤16)能谱,利用运动源模型拟合能谱,并详细讨论了类弹、类靶和中速这三种源的特性及其随角度和中等质量碎片电荷的变化规律.从前角区中等质量碎片的符合测量中得到关联测得的两个中等质量碎片分别来自于两个发射源,即一个来自于类弹源,另一个来自于中速源的几率占绝大多数.     

Re30+离子双电子复合速率系数的理论研究

复杂结构离子的双电子复合速率系数在极紫外光刻光源、核聚变等应用研究的等离子体光谱模拟和诊断中具有重要的应用价值。利用全相对论组态相互作用方法,详细计算了基组态为4p64d9的Re30+离子经双激发态（4p64d9）-1nln'l'（n=4~6,n'=4~23）的双电子复合（DR）过程。研究分析了激发、辐射通道,组态相互作用,级联退激对DR速率系数的影响。其中内壳层4p电子激发的DR速率系数是总DR速率系数的28.2%~44.9%,所以内壳层4p电子激发的贡献不可以忽略。级联退激对DR速率系数的最大贡献为12.9%,也必须要予以考虑。通过对双电子复合、辐射复合、以及三体复合速率系数的比较,辐射复合速率系数的最大值为DR速率系数的22.6%,三体复合速率系数的最大值仅为DR速率系数的0.3%。因此,DR速率系数远远大于辐射复合和三体复合速率系数。该结果表明DR过程对于等离子体离化态分布、能级布居以及光谱模拟都极为重要。为了方便应用,对基态和第一激发态的总DR速率系数进行了参数拟合。该研究结果将为Re激光等离子体的光谱模拟及复杂结构离子DR过程的进一步研究提供参考。Dielectronic recombination (DR) rate coefficients of complex ions are very important in some application research, such as extreme ultraviolet lithography and nuclear fusion. Based on the fully relativistic configuration interaction method, theoretical calculations are carried out to research the DR processes, in which Re30+ ions in the ground state 4p64d9 to (4p64d9)-1nln'l'(n=4~6, n'=4~23). Influence of excitation and radiation channels, configuration interaction, the effect of decays to autoionizing levels possibly followed by radiative cascades (DAC) are analyzed. The contributions through 4p subshell excitations to the total rate coefficient are 28.2%~44.9% in the whole temperature region. Hence the contributions from inner-shell electron excitation are very important. The contributions from the DAC transitions increase smoothly with the increasing temperature and are about 12.9% at 50 000 eV. The contributions of DAC can not be neglected. By means of compared total DR rate coefficients to radiative recombination rate coefficients and three-body recombination rate coefficients, it shows that the maximum value of the radiation recombination rate coefficient is 22.6% of the DR rate coefficient and the maximum value of the three-body recombination rate coefficient is only 0.3% of the DR rate coefficient. The total DR rate coefficient is greater than either the radiative recombination or three-body recombination coefficients in the whole temperature range. The corresponding DR process is very important for plasma ionization distribution, population level and spectrum simulation. In addition to facilitate the application, the total DR rate coefficients for the ground state and the first excited state are fitted to an empirical formula. These results will provide the reference for the further analyses of rhenium laser plasma spectrum simulation and the complex structures ions DR process.     

高Q2电子原子核单举准弹性散射截面的计算方法

电子与原子核碰撞实验是通过中高能探针探测原子核结构的方法。本文提供了一个高Q2单举准弹性电子原子核散射截面的计算方法,此方法是基于核子-核子短程关联的经验公式与弱束缚近似下的氘核散射截面模型。在弱束缚近似下,氘核可以看成是由近似自由质子与中子组成,质子与中子的短程关联可以忽略,氘核结构函数可以写成质子与中子结构函数线性组合,从而可以得到氘核的散射截面。根据氘核散射截面以及短程关联的经验公式,可以得到考虑短程关联的原子核A > 2的散射截面。我们将计算得到的散射截面与已有的实验和及Bosted拟合方法的结果比较,发现本文的方法在大x和Q2 > 2 GeV2区域得到的结果与实验结果符合得较好并且对于一些重原子核,尤其是4He核,明显优于Bosted方法的结果。The electron nucleus collision experiments are approaches measuring the structure of nuclei by using intermediate and high energy probe. This paper shows a calculation method of inclusive electron nucleus quasielastic scattering cross section at high Q2 which based on a empirical formula of Nucleon-Nucleon Short Range Correlation (NN-SRC) and a model of electron deuteron quasi-elastic cross section in Weak-Binding Approximation (WBA). In WBA, the deuteron can be regarded as the combination of quasi-free proton and neutron and the short range correlation between them can be ignored. Therefore the structure function of deuteron can be written as the linear combination of that of proton and neutron, then one can get the cross section of deuteron. According to the cross section of deuteron and the empirical formula, one can obtain the cross section of nuclei A > 2 which considers NN-SRC effect. We compare our calculation results with existing experiments and the results calculated by Bosted' fit method, then find that our results match the experiments at high x and Q2 > 2 GeV2 and better significantly than the Bosted's results for some heavier nucleus, especially 4He.     

高n双电子复合伴线对类氦镁离子Kα共振线贡献的理论计算

利用多组态Dirac-Fock方法计算了类氦镁离子的双电子复合截面.分析了类锂镁离子高n双电子伴线结构及其对类氦镁离子Kα共振线的影响.结果表明类锂镁离子高n双电子伴线和类氦镁离子Kα共振线之间存在着严重的混合,会导致Kα共振线强度的增加、谱形的加宽以及位置的移动.