光子晶体增强中红外发光研究EI北大核心CSCD

稀土掺杂硫系玻璃是实现中红外发光的重要手段,通过在稀土掺杂硫系玻璃样品上构造光子晶体结构可以大大增强其发光效率。制备了Tm3+离子掺杂硫系玻璃样品并测试了其光谱特性,通过设计光子晶体结构来增强Tm3+离子跃迁产生的3.73 mm处的荧光强度。利用有限时域差分法(FDTD)进行运算,模拟结果表明,通过优化设计的光子晶体结构参数,掺杂样品在3.73 mm处的光子态密度相比于未采用光子晶体结构所产生的光子态密度有极大提高,计算其Purcell放大因子可达到未进行结构设计的50倍以上。光子态密度的极大提高以及Purcell放大因子为增强发光强度提供了理论依据,该研究结果对实现高效率中红外光源器件具有重要的指导意义。     

基于吉布斯弯曲界面相平衡判据的开尔文方程推导

对两种界面热力学处理方法(古根海姆法与吉布斯法)进行了介绍。采用吉布斯界面热力学方法建立了存在界面相时两相平衡的热力学判据,并以此为基础提出了一种新的开尔文方程推导方法。     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

锰掺杂的钙钛矿型钛铌酸盐基复合阴极高温电解水蒸气

通过在氧化还原稳定的钙钛矿材料钛铌酸盐的B位晶格中掺杂具有氧化还原活性的锰元素提高固体氧化物电解池复合电极电催化性能．研究发现,锰元素成功取代钛铌酸盐B位的Ti／Nb．掺杂后的样品的离子电导率在800℃下的氧化气氛和还原气氛下的离子电导率分别提高了约1和0．5个数量级．基于掺杂后的钛铌酸盐基复合阴极,氧离子传导型固体氧化物电解池电解水蒸汽的电流效率在有和无还原气体保护下分别提高了25％和30％．     

锰掺杂的钙钛矿型钛铌酸盐基复合阴极高温电解水蒸气

通过在氧化还原稳定的钙钛矿材料钛铌酸盐的B位晶格中掺杂具有氧化还原活性的锰元素提高固体氧化物电解池复合电极电催化性能．研究发现,锰元素成功取代钛铌酸盐B位的Ti/Nb．掺杂后的样 品的离子电导率在800 oC下的氧化气氛和还原气氛下的离子电导率分别提高了约1和0.5个数量级．基于掺杂后的钛铌酸盐基复合阴极,氧离子传导型固体氧化物电解池电解水蒸汽的电流效率在有和无还原气体保护下分别提高了25%和30%．     

人工神经网络用于近红外光谱预测汽油辛烷值

本文对BP人工神经网络(ANN)方法在汽油的辛烷值与其近红外光谱光谱吸光度的关系之间进行关联预报方面进行了研究。采用35个汽油实际样本数据,建立了利用汽油的近红外光谱光谱吸光度预测汽油辛烷值的BP人工神经网络模型。对所有辛烷值的计算结果与实测值进行了比较,得到的预测值与实测值计算误差小于1.55%。     

对球状液滴拉普拉斯公式热力学推导方法的讨论

本文针对球状液滴拉普拉斯公式热力学推导方法进行了讨论分析。首先从界面热力学基本方程的建立方法和界面热力学基本方程中作为偏微分的压强的数学定义两个角度进行分析,得出了液滴界面热力学基本方程中,压强为与之平衡的外界气体压强。另外,从实际发生的物理过程来看,本文所质疑的球状液滴拉普拉斯公式的热力学推导方法采用无外力做功时液滴体积增大d V的过程是明显违反热力学第一定律的。     

关于表面张力和表面自由能的讨论

简要地回顾了表面物理化学中表面张力和表面吉布斯自由能(以下简称为表面自由能)两个基本概念的发展历史,讨论了表面张力和表面自由能形成的机制,以及键能与表面张力的关系,最后指出了尽管表面相可以在理论上抽象为几何面,但它是真实存在的独立相,而且由于表面自由能的原因它始终处于亚稳定状态.     

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AIInGaN superlattice electron blocking layer

InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concen- tration, radiative recombination rate, electron leakage, internal quantum efficiency （IQE）, current-voltage （l-V） perfor- mance curve, light output-current （L-l） characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AIInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AIlnGaN SL EBL is used.     

Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.