晶格失配应力对单晶(BiTm)_3(GaFe)_5O_(12)膜磁畴结构的影响

利用液相外延工艺在钆镓石榴石衬底上制得了单晶(BiTm)_3(GaFe)_5O_(12)膜,研究了晶格失配应力对其磁畴结构的影响.研究发现,生长速率越快,膜的晶格常数越大;晶格失配应力可以在一定范围内调整膜的垂直各向异性;随着晶格失配应力由较大张应力逐渐转变为较大压应力,磁畴形状先由磁泡畴转变成迷宫畴,然后转变为过渡态部分弯曲的条状畴,最终转变为整齐排列的条状畴;失配应力同时对畴宽也有影响,膜受到的失配应力越大,畴宽越大.这一实验研究对基于控制晶格失配应力来调控单晶膜的各向异性和磁畴结构有指导意义.     

复合添加合金元素对纳米双相Nd2Fe14B/α-Fe永磁体微观结构和磁性能的影响

采用正交实验法系统地研究了复合添加合金元素Ga ,Nb ,Zr,Hf和Pr对纳米双相Nd9-xPrxFe86 .5-y -z -m -nGayNbzZrmHfnB4 .5(x =0 ,2 2 5 ;y ,z ,m ,n =0 .5 ,1.0 )快淬带微观结构和磁性能的影响。结果表明 :复合添加合金元素可以大大地降低Nd2 Fe1 4B和α Fe相的晶粒尺寸 ,并促使快淬带在低辊速下非晶化 ;在退火后样品带中 ,没有发现晶粒的不均匀长大 ,但大量添加合金元素会导致晶粒形貌不够理想。另一方面 ,由于各元素间的交互作用 ,复合添加合金元素使磁性能的变化规律非常复杂。实验发现 ,当Nb的含量为 0 .5 %时 ,增加Pr和Ga的添加量并降低Zr和Hf的添加量可以明显地改善磁性能。成分为Nd2 .2 5Pr6 .75Fe84 .5Ga1 .5Nb0 .5B4 .5的合金 ,在 15m·s- 1 辊速下获得的最佳磁性能为Jr=1.0 5 3T ,iHc=5 3 0 .9kA·m- 1 ,(BH) max=12 4kJ·m- 3。     

Flexible tuning microwave permeability spectrum in [ferromagnet/antiferromagnet]_n exchange-biased multilayer stack structure

NiFe/[IrMn/NiFe/IrMn] 5 /[NiFe/IrMn] 4 /NiFe structured exchange-biased multilayer films are designed and prepared by magnetron sputtering. The static and the microwave magnetic properties are systematically investigated. The results reveal that adding a partially pinned ferromagnetic layer can effectively broaden the ferromagnetic resonance linewidth toward the low frequency domain. Moreover, a wideband multi-peak permeability spectrum with a 3.1-GHz linewidth is obtained by overlapping the spectra of different partially pinned ferromagnetic layers and [antiferromagnet/ferromagnet/antiferromagnet] n stacks. Our results show that the linewidth of the sample can be feasibly tuned through controlling the proper exchange bias fields of different stacks. The designed multilayered thin films have potential application for a tunable wideband high frequency noise filter.