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实验采用300 keV的He2+辐照6H-SiC,辐照温度分别为室温,450,600和750 ℃,辐照剂量范围为1×1015–1×1017 cm-2,辐照完成后对样品进行拉曼散射和紫外可见透射光谱测试与研究. 这两种分析方法的实验结果表明,He离子辐照产生的缺陷以及缺陷的恢复与辐照剂量和辐照温度有着直接关系. 室温下辐照会使晶体出现非晶化,体现在拉曼特征峰消失,相对拉曼强度达到饱和(同时出现了较强的Si-Si峰);高温下辐照伴随着晶体缺陷的恢复过程,当氦泡未存在时,高温辐照很容易导致Frenkel对、缺陷团簇等缺陷恢复,当氦泡存在时,氦泡会抑制缺陷恢复,体现在相对拉曼强度和相对吸收系数曲线斜率的变化趋势上. 本文重点讨论了高温辐照情况下氦泡对缺陷聚集与恢复的影响,并与高温下硅离子辐照碳化硅结果进行了对比.
关键词:
6H-SiC
氦泡
拉曼散射光谱
紫外可见透射光谱 相似文献
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Effects of Grain Boundary Characteristics on Its Capability to Trap Point Defects in Tungsten 下载免费PDF全文
As recombination centers of vacancies(Vs) and self-interstitial atoms(SIAs), firstly grain boundaries(GBs)should have strong capability of trapping point defects. In this study, abilities to trap Vs and SIAs of eight symmetric tilt GBs in tungsten are investigated through first-principles calculations. On the one hand, vacancy formation energy E~f_V rapidly increases then slowly decreases as the hard-sphere radius r_0 of the vacancy increases.The value of E~f_V is the largest when r_0 is about 1.38 ?, which is half the distance between the nearest atoms in equilibrium single crystal tungsten. That is, any denser or looser atomic configuration around GBs than that in bulk is helpful to form a vacancy. On the other hand, SIA formation energy E~f_(SIA) at GBs decreases monotonically with increasing the hard-sphere radius of the interstitial sites, which indicates that GBs with larger interstitial sites have stronger ability to trap SIAs. Based on the data obtained for GBs investigated in this study, it is found that the ability to trap Vs increases as the GB energy increases, and the capability of trapping SIAs linearly increases as the excess volume of GB increases. Due to its lowest GB energy and smallest excess volume among all GBs studied, twin GB ∑3(110)[111] has the weakest capability to trap both Vs and SIAs. 相似文献
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