用于可充电器件的有机电极材料

有机化合物作为可充电器件的电极材料可以通过自身电活性部位电荷状态的变化来实现本征的氧化还原反应。除了锂离子电池外,有机电极材料还可以用于其他离子半径更大的金属离子电池(如Na⁺、K⁺、Mg²⁺、Zn²⁺等)。有机电极材料还具有诸多优势,比如结构多样、成本低廉、资源丰富和可持续性高,易于通过适当的材料设计调整其性能等,已被证明在可充电器件中具有重要的应用潜力。然而,有机电极的实际应用仍需要解决一些关键问题,例如导电性差和在常规有机电解液中溶解等。本文介绍了各种具有不同氧化还原活性中心的有机电极材料及其反应机理,包括有机硫化物、有机自由基、亚胺类化合物、偶氮化合物和羰基化合物;重点总结了有机羰基化合物电极材料在性能改善方面的策略以及近5年在可充电器件中的应用;最后,讨论了有机电极材料需要应对的挑战以及未来的机遇。     

Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co_2MnAl

Off-stoichiometric full-Heusler alloy Co_2 MnAl thin films with different thicknesses are epitaxially grown on GaAs(001) substrates by molecular-beam epitaxy. The composition of the films, close to Co_(1.65)Mn_(1.35)Al(CMA),is determined by x-ray photoelectron spectroscopy and energy dispersive spectroscopy. Tunable perpendicular magnetic anisotropy(PMA) from 3.41 Merg/cm~3 to 1.88 Merg/cm~3 with the thickness increasing from 10 nm to 30 nm is found,attributed to the relaxation of residual compressive strain. Moreover, comparing with the ultrathin CoFeB/MgO used in the conventional perpendicular magnetic tunnel junction, the CMA electrode has a higher magnetic thermal stability with more volume involved. The PMA in CMA films is sustainable up to 300℃,compatible with semiconductor techniques. This work provides a possibility for the development of perpendicular magnetized full-Heusler compounds with high thermal stability and spin polarization.     

汽车产业模块化对不连续创新影响的实证分析

为探讨产业模块化与不连续创新之间的相互作用关系,分别构建了产业模块化指数与不连续创新指数的测度指标,基于全球汽车产业1972~2011年的专利数据,主要利用格兰杰因果检验方法就产业模块化对不连续创新的影响及其因果方向进行了实证分析。结果表明,产业模块化对不连续创新存在显著正向影响且长期影响较为显著。     

竞争性自适应重加权算法和相关系数法提取特征波长检测番茄叶片真菌病害

基于竞争性自适应重加权算法(CARS)和相关系数法(CA)特征波长选择方法,提出了利用可见-近红外高光谱成像技术检测番茄叶片灰霉病的方法。首先获取380~1 023nm波段范围内80个染病和80个健康番茄叶片的高光谱图像,然后提取染病和健康叶片感兴趣区域(ROI)的光谱反射率值,作为番茄叶片灰霉病鉴别模型的输入来建立支持向量机(SVM)鉴别模型,训练集和验证集的鉴别率都是100%。研究进一步通过CARS和CA提取特征波长,分别得到5个(554,694,696,738和880nm)和4个(527,555,571和633nm)特征波长,然后分别建立CARS-SVM和CA-SVM鉴别模型。结果显示,CARS-SVM模型中训练集和验证集的鉴别率都是100%,CA-SVM模型中训练集和验证集的鉴别率分别是91.59%和92.45%。以上结果说明了从可见-近红外高光谱图像中提取的光谱反射率值用于检测番茄叶片的灰霉病是可行的。     

Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

The energy band structure of single-layer graphene under one-dimensional electric and magnetic field modulation is theoretically investigated. The criterion for bandgap opening at the Dirac point is analytically derived with a two-fold degeneracy second-order perturbation method. It is shown that a direct or an indirect bandgap semiconductor could be realized in a single-layer graphene under some specific configurations of the electric and magnetic field arrangement. Due to the bandgap generated in the single-layer graphene,the Klein tunneling observed in pristine graphene is completely suppressed.     

水分子链受限于单壁碳纳米管结构的密度泛函理论研究

本文采用第一性原理的密度泛函理论,主要以(6,6)Armchair型,(11,0)Zigzag型单壁碳纳米管为研究对象,研究了水分子链在碳纳米管内部吸附的稳定结构,以及结合能随其结构的变化.结果表明:当水分子链受限于碳纳米管内部时,引起碳纳米管直径收缩,这主要是由于水分子链与碳纳米管之间的氢键作用以及范德华弱相互作用所引起的.随着碳纳米管半径的增加,两种单体之间的结合能逐渐减小,但当碳纳米管半径增加至6.78时,其结合能又有所增加,这是由于在优化过程中,水分子链单体之间的氢键作用大于水分子链与碳纳米管之 关键词： 水分子链/单壁碳纳米管 密度泛函理论 结构稳定性     

有效质量差异和电场对GaN/AlxGa1-xN球形量子点电子结构的影响

用平面波展开法对GaN/Al_xGa_1-xN球形量子点中类氢杂质态能级随量子点半径、Al组分以及结合能随Al组分的变化规律进行了详细讨论.计算了量子点内外有效质量差异对杂质态能级和结合能的修正，结果表明对于Al组分较高的GaN/Al_xGa_1-xN球形量子点，电子有效质量差异对杂质能级和结合能的修正不能忽略.考虑电子有效质量差异后，进一步具体计算了杂质结合能随量子点半 关键词： 球形量子点 平面波展开法 有效质量     

光学微透镜阵列成像质量预测和测量

为了研究微透镜阵列成像质量的影响因素,针对慢刀伺服加工和紫外（UV）光固化工艺制备的微透镜阵列,引入微透镜阵列镜片的误差,建立基于Zemax光学软件的光学微透镜阵列成像仿真模型,分析透镜单元的高度、曲率半径、入瞳直径等误差对微透镜阵列成像质量的影响。搭建光学测试平台对评价微透镜阵列成像性能的光学参数进行检测,包括各透镜单元的焦斑大小、位置误差及其焦距值,并利用点扩散函数（PSF）曲线的半峰全宽值对光场成像结果进行成像质量评价,测量得到微透镜阵列的焦距标准误差为0.12 mm。将测量结果与仿真结果相比,可得PSF曲线的半峰全宽值误差在12%左右,证明了仿真模型的准确性。利用仿真和实验的方法建立了微透镜阵列镜片误差与其光学成像质量之间的关系,这可为基于功能实现的光学微透镜阵列的超精密加工工艺提供理论基础和指导。     

Low-temperature characteristics of two-color InAs/InP quantum dots laser

We report on the lasing characteristics of a two-color InAs/InP quantum dots(QDs)laser at a low tem-perature.Two lasing peaks with a tunable gap are simultaneously observed.At a low temperature of 80 K,a tunable range greater than a 20-nm wavelength is demonstrated by varying the injection current from 30 to 500 mA.Under a special condition,we even observe three lasing peaks,which are in contrast to those observed at room temperature.The temperature coefficient of the lasing wavelength was obtained for the two colors in the 80?280 K temperature range,which is lower than that of the reference quantum well(QW)laser working in the same wavelength region.     

Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied.It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power,lower current leakage,and less efficiency droop over its conventional InGaN/GaN counterparts.Based on the numerical simulation and analysis,these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells(QWs) when the InGaN/GaN multilayer barriers are used.