基于锑化物二类超晶格的多色红外探测器研究进展

近年来InAs/GaSb二类超晶格红外探测器在材料晶体结构生长、器件结构设计与成像应用方面取得了飞速发展。尤其在多色红外探测方面,二类超晶格材料以其具备的带隙可调、暗电流小、量子效率高、材料均匀性高,以及成本低等优越性能,使其逐步成为第三代红外焦平面探测器的优选材料。本文阐述了锑化物窄带隙半导体研究中心的锑化物多色红外探测器研究进展。本团队成功实现了低噪声、高量子效率以及低光学串扰的短/中、短/长、中/长、长/长、中/长/甚长波等多种高性能多色红外探测器研制。     

Investigation of active-region doping on InAs/GaSb long wave infrared detectors

The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.     

聚合诱导自组装(PISA)技术的应用研究进展

聚合诱导自组装(PISA)技术是制备嵌段共聚物纳米自组装体的一种新技术.相较于传统的嵌段共聚物自组装技术,该技术具有边聚合、边组装的操作简便性特点,同时还具有纳米自组装体形态可控、固含量高(高达50％)等优点,使得聚合物纳米自组装体的规模化生产和应用成为可能.经过十多年的发展,基于各种"活性"/可控聚合机理和各种配方组...     

GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

InAs/GaSb superlattice （SL） short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs（O01） semi-insulating substrates. An interfacal misfit mode AISb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/S ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800 μm^2 without using passivation or antirefleetion coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25 μm at 300 K, the peak detectivities of the detectors are 4 × 10^9 cm·Hz^1/2/W at 77K and 2 × 10^8 cm·Hz1/2/W at 300K, respectively.     

Wet etching and passivation of GaSb-based very long wavelength infrared detectors

The etching and passivation processes of very long wavelength infrared (VLWIR) detector based on the InAs/GaSb/AlSb type-II superlattice have been studied. By studying the effect of each component in the citric acid solution (citric acid, phosphoric acid, hydrogen peroxide, deionized water), the best solution ratio is obtained. After comparing different passivation materials such as sulfide + SiO₂, Al₂O₃, Si₃N₄ and SU8, it is found that SU8 passivation can reduce the dark current of the device to a greater degree. Combining this wet etching and SU8 passivation, the R₀A of VLWIR detector with a mesa diameter of 500 μm is about 3.6 Ω ·cm² at 77 K.     

金属面曝光选区激光熔化原理装置及试验研究

与点扫描方式相比,面曝光选区激光熔化因具有成形效率高、残余应力水平低等优势,而成为极具发展前景的新一代选区激光熔化增材制造技术的发展方向。利用波长为915 nm的二极管连续激光器作为光源,结合电寻址反射式纯相位液晶空间光调制器,搭建了新一代面曝光选区激光熔化增材制造原理装置平台。获得了“○”形样式的面光斑曝光,基于光敏纸和低熔点金属粉末材料进行面曝光熔化成形并获得了样品,实现了面曝光选区激光熔化的原理性实验验证。     

面曝光选区激光熔化成形形状精度研究

主要研究面曝光选区激光熔化单层成形时,激光光斑搭接率和电流对形状精度的影响。实验通过控制变量法研究搭接率、曝光时间、电流等工艺参数对激光光斑、熔道、圆环、尖角等成形形状精度的影响。实验结果表明:一定范围内,电流越大,激光光斑更均匀,成形一致性更好;搭接率38.4%能够获得最低的形状误差的熔道;搭接率一定,圆环成形误差随电流的增加而增加;尖角成形误差随着电流增加,呈现先增后减的趋势;搭接率为46.1%、38.4%时,零级衍射带来的形状误差降低。     

双酚A的缩合及磺甲基化过程研究

磺化在有机合成中的一个重要作用是赋予主体化合物的水溶性。磺甲基化聚合物有很好的耐热稳定性，已广泛应用于油田、建材、医疗、制革等行业。本文通过对双酚A的磺甲基化反应过程中产物的分析研究，导出反应过程变化规律，研究清洁化制革用白色鞣剂的制备方法。     

High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

The GaSb-based laser shows its superiority in the 3–4 μm wavelength range. However, for a quantum well(QW) laser structure of InGaAsSb/AlGaInAsSb multiple-quantum well(MQW) grown on GaSb, uniform content and high compressive strain in InGaAsSb/AlGaInAsSb are not easy to control. In this paper, the influences of the growth temperature and compressive strain on the photoluminescence(PL) property of a 3.0-μm InGaAsSb/AlGaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the In0.485GaAs0.184Sb/Al0.3Ga0.45In0.25As0.22Sb0.78MQW with 1.72% compressive strain grown at 460 C posseses the optimum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.