N在Zn_(1-x)Be_xO合金中热力学稳定性的第一性原理研究

采用第一性原理计算方法,通过改变Zn1-xBexO合金中Be的浓度及其掺杂位型,研究N在Zn1-xBexO合金中的形成能和受主离化能,分析了p型导电的可能性。结果表明:Be-N共掺杂时,N优先占据周围没有Be的O位置,每增加一个Be近邻掺杂原子,NO的形成能增加约0.2 eV。当近邻Be原子数为2和3时,NO的受主离化能比较低。Be浓度为11at%时,具有2个近邻Be原子的NO的受主离化能降低至0.1 eV左右,可以认为是浅受主,Be-N共掺ZnO才可能呈p型导电。考虑NO在室温条件下的受主离化率和NO形成能的影响,估算出Be-N所提供的空穴载流子浓度不会高于1017cm-3;如果计及n型背景载流子的补偿效应,Be-N共掺ZnO的p型导电率应该比较低。     

Computational Prediction to Two-Dimensional SnAs

By means of the particle-swarm optimization method and density functional theory calculations, the lowestenergy structure of SnAs is determined to be a bilayer stacking system and the atoms on top of each other are of the same types. Using the hybrid functional of Heyd–Scuseria–Ernzerhof, SnAs is calculated to be a semiconductor with an indirect band gap of 1.71 eV, which decreases to 1.42 eV with the increase of the bi-axial tensile stress up to 2%, corresponding to the ideal value of 1.40 eV for potential photovoltaic applications. Based on the deformation potential theory, the two-dimensional(2 D) SnAs has high electron motilities along x and y directions(1.63 × 10~3 cm~2 V~(-1)s~(-1)). Our calculated results suggest that SnAs can be viewed as a new type of 2 D materials for applications in optoelectronics and nanoelectronic devices.     

N掺杂Cu2O薄膜的光学性质及第一性原理分析

采用射频磁控溅射技术, 在不同温度下制备了N掺杂Cu₂O薄膜．透射光谱分析发现, N掺杂导致Cu₂O成为允许的带隙直接跃迁半导体, 并使Cu₂O的光学禁带宽度增加．不同温度下沉积的薄膜光学禁带宽度E_g=2.52± 0.03 eV．第一性原理计算表明, N掺杂导致Cu₂O的禁带宽度增加了约25%, 主要与价带顶下移和导带底上移有关, 与实验报道基本符合．N的2p电子态分布不同于O原子, 在价带顶附近具有较大的态密度是N掺杂Cu₂O变成允许的带隙直接跃迁半导体的根本原因．     

钼酸铅晶体中F型色心电子结构的理论计算

运用相对论性的密度泛函离散变分(DV-Xα)方法模拟计算PbMoO4晶体中可能存在的F型色心的电子结构.结果表明,F,F 心在PbMoO4晶体的禁带中引入了施主能级,其光学跃迁能分别是2.141,2.186 eV,即F,F 心能分别引起PMO晶体中581,567 nm的吸收,该吸收与PbMoO4晶体中580 nm的吸收峰对应.因此,可推断F型色心能引起PMO晶体中由光色效应引起的580 nm吸收.     

Mechanical and thermodynamic properties of the monoclinic and orthorhombic phases of SiC_2N_4 under high pressure from first principles

First principles calculations are preformed to systematically investigate the electronic structures, elastic and thermodynamic properties of the monoclinic and orthorhombic phases of Si C2N4 under pressure. The calculated structural parameters and elastic moduli are in good agreement with the available theoretical values at zero pressure. The elastic constants of the two phases under pressure are calculated by stress–strain method. It is found that both phases satisfy the mechanical stability criteria within 60 GPa. With the increase of pressure, the degree of the anisotropy decreases rapidly in the monoclinic phase, whereas it remains almost constant in the orthorhombic phase. Furthermore, using the hybrid density-functional theory, the monoclinic and orthorhombic phases are found to be wide band-gap semiconductors with band gaps of about 2.85 e V and 3.21 e V, respectively. The elastic moduli, ductile or brittle behaviors, compressional and shear wave velocities as well as Debye temperatures as a function of pressure in both phases are also investigated in detail.     

碘化铯晶体中电子型色心的电子结构研究

运用以密度泛函理论为基础的相对论性离散变分方法(DV-Xα)模拟计算了完整的和含有F心、F+心以及F2心的碘化铯(CsI)晶体的电子结构,得到了含F心和F+心以及F2心的CsI晶体电子态密度分布以及它们可能产生的光学跃迁模式.计算结果表明,含F心和F2心的CsI晶体的禁带宽度明显变窄,F心和F2心的能级都出现在禁带中并且作为施主能级位于导带底部,利用过渡态理论计算得到其能级向Cs的5d轨道发生光学跃迁,能量跃迁值分别为1.69eV和1.15eV,该结果与实验结果完全一致,F+心没有能级出现在禁带中.计算结果从理论上成功地解释了碘化铯晶体经过辐照后电子型色心所产生的吸收带起源问题.     

Elastic and thermodynamic properties of vanadium nitride under pressure and the effect of metallic bonding on its hardness

By the particle-swarm optimization method, it is predicted that tetragonal P42mc, 141md, and orthorhombic Amm2 phases of vanadium nitride （VN） are energetically more stable than NaCl-type structure at 0 K. The enthalpies of the predicted three new VN phases, along with WC, NaC1, AsNi, CsCl type structures, are calculated each as a function of pressure. It is found that VN exhibits the WC-to-CsCl type phase transition at 256 GPa. For the considered seven crystal- lographic VN phases, the structures, elastic constants, bulk moduli, shear moduli, and Debye temperatures are investigated. Our calculated equilibrium structural parameters are in very good agreement with the available experimental results and the previous theoretical results for the NaC1 phase. The Debye temperatures of VN predicted three novel phases, which are all higher than those of the remaining structures. The elastic constants, thermodynamic properties, and elastic anisotropies of VN under pressure are obtained and the mechanical stabilities are analyzed in detail based on the mechanical stability criteria. Moreover, the effect of metallic bonding on the hardness of VN is also investigated, which shows that VNs in P42mc, 141md, and Amm2 phases are potential superhard phases. Further investigation on the experimental level is highly recommended to confirm our calculations presented in this paper.     

Structure prediction,electronic, and mechanical properties of alkali metal MB_(12)(=Be,Mg, Ca,Sr) from first principles

Using the particle swarm optimization algorithm on structural search methods, we focus our crystal structures search on boron-rich alkali metal compounds of MB₁₂(M = Be, Mg, Ca, Sr) with simulation cell sizes of 1–2 formula units(f.u.)at 0 GPa. The structure, electronic, and mechanical properties of MB₁₂ are obtained from the density functional theory using the plane-wave pseudopotential method within the generalized gradient approximations. The formation enthalpies of MB₁₂ regarding to solid metal M and solid alpha-boron suggested the predicted structures can be synthesized except for BeB12. The calculated band structures show MB₁₂(M = Be, Mg, Ca, Sr) are all indirect semiconductors. All the calculated elastic constants of MB₁₂ satisfy the the mechanical stable conditions. The mechanical parameters(i.e., bulk modulus,shear modulus, and Young’s modulus) are derived using the Voigt–Reuss–Hill method. The G/B ratios indicated that the MB₁₂ should exhibit brittle behavior. In addition, the hardness, Debye temperature, universal anisotropic index, and the percentage of anisotropy in compression and shear are also discussed in detail. We hope our results can inspire further experimental study on these boron-rich alkali-metal compounds.     

二维BX(X=S,Se,Te)结构预测与性质的第一性原理研究

采用基于粒子群优化算法的结构预测程序CALYPSO结合密度泛函理论的VASP软件包，预测得到二维BX(X=S、Se、Te)的最低能量结构，该结构是由B和X原子形成的双层褶皱的六角密堆积结构，层与层之间较强的B-B键是稳定结构的关键．凝聚能和声子谱计算结果表明二维BX(X=S、Se、Te)在热力学和动力学上均是稳定的．能带结构和电子态密度的计算分析发现三种二维材料均呈现间接带隙半导体行为，带隙分别为3.98 eV（BS）、3.84 eV（BSe）和2.31 eV（BTe）. 采用“应力应变”方法，计算得到二维BX(X=S、Se、Te)的弹性常数、杨氏模量、泊松比以及杨氏模量和泊松比随方向变化的关系并进行了详细的讨论, 发现杨氏模量和泊松比呈现各向同性. 除此之外，我们还研究了二维BX(X=S、Se、Te)的应力-应变关系，发现BTe较BS和BSe有较强的抗拉伸性．由于BS和BSe在价带顶有效质量较大，为此，我们采用形变势理论研究了BTe的载流子迁移率. 结果发现BTe在ao1和ao2方向上的电子迁移率分别为20.8和122.6 cm2V-1s-1，而空穴在两个方向上的迁移率分别为673.4和65.0 cm2V-1s-1, 空穴在ao1方向上的较高的迁移率说明二维BTe具有较好的输运性质．     

Superconducting properties of barium in three phases under high pressure from first principles

Electron-phonon coupling (EPC) in the three high-pressure phases of Ba is investigated using a pseudopotential plane-wave method based on density functional perturbation theory. The calculated values of superconducting critical temperature T c of Ba-I and Ba-II under pressure are consistent well with the trends observed experimentally. Moreover, Ba-V is found to be superconducting with a maximum T c exceeding 7.8 K at 45 GPa. With the increase of pressure, the values of T c increase in Ba I and Ba-II but the value of T c decreases in Ba-V. For Ba-I at pressures below 2 GPa, the increases of logarithmic average frequency ω log and electron-phonon coupling parameters λ both contribute to the enhancement of T c . For all the three phases at pressures above 2 GPa, T c is found to be primarily determined by λ . Further investigation reveals that for all the three phases, the change in λ with pressure can be explained mainly by change in the phonon frequency. Thus for Ba-II and Ba-V, although they exhibit completely different superconducting behaviors, their superconductivities have the same origin; the pressure dependence of T c is determined finally by the pressure dependence of phonon frequency.