自旋轨道耦合作用对碳纳米管电子能带结构的影响

本文考虑自旋轨道耦合作用的情况下,采用紧束缚近似螺旋对称模型计算了单壁碳纳米管的电子能带结构.研究发现:对于Armchair型单壁碳纳米管,自旋轨道耦合作用和弯曲效应共同导致了费米面Dirac点附近电子能带结构的能隙;对于Zigzag型和手性单壁碳纳米管,自旋轨道耦合作用使得电子最高占据态和最低未占据态产生能级劈裂,能级劈裂的大小不但与碳纳米管的直径和手性角密切相关,而且相对于费米面是不对称的;根据指数(n,m)可以将Zigzag型和手性单壁碳纳米管分为金属性碳纳米管(ν=0) 关键词： 单壁碳纳米管 自旋轨道耦合 紧束缚近似螺旋对称模型     

点内电子-电子库仑作用会引起退相干么?

利用一个开放的多端Aharonov—Bohm(AB)装置研究了存在点内库仑作用时，电子通过量子点时的相干性．作者发现点内库仑作用不会引起任何退相干效应，即电子隧穿通过量子点是完全相干的．另外，作者还发现，在两端AB装置中，电导AB振荡的振幅非对称性来源于受限的结构和库仑作用两方面．因此，不能把振幅的非对称性和退相干过程联系起来．     

Quasibound states in graphene quantum-dot nanostructures generated by concentric potential barrier rings

We study the quasibound states in a graphene quantum-dot structure generated by the single-, double-, and triple-barrier electrostatic potentials. It is shown that the strongest quasibound states are mainly determined by the innermost barrier. Specifically, the positions of the quasibound states are determined by the barrier height, the number of the quasibound states is determined by the quantum-dot radius and the angular momentum, and the localization degree of the quasibound states is influenced by the width of the innermost barrier, as well as the outside barriers. Furthermore, according to the study on the double- and triple-barrier quantum dots, we find that an effective way to generate more quasibound states with even larger energy level spacings is to design a quantum dot defined by many concentric barriers with larger barrier-height differences. Last, we extend our results into the quantum dot of many barriers, which gives a complete picture about the formation of the quasibound states in the kind of graphene quantum dot created by many concentric potential barrier rings.     

Kondo transport through a quantum dot coupled with side quantum-dot structures

This paper investigates Kondo transport properties in a quadruple quantum dot (QD) based on the slave-boson mean field theory and the non-equilibrium Green’s function.In the quadruple QD structure one Kondo-type QD sandwiched between two leads is side coupled to two separate QD structures:a single-QD atom and a double-QD molecule.It shows that the conductance valleys and peaks always appear in pairs and by tuning the energy levels in three side QDs,the one-,two-,or three-valley conductance pattern can be obtained.Furthermore,it finds that whether the valley and the peak can appear is closely dependent on the specific values of the interdot couplings and the energy level difference between the two QDs in the molecule.More interestingly,an extra novel conductance peak can be produced by the coexistence of the two different kinds of side QD structures.     

The calculation of energy gaps in small single-walled carbon nanotubes within a symmetry-adapted tight-binding model

This paper studies in detail the electronic properties of the semimetallic single-walled carbon nanotubes by applying the symmetry-adapted tight-binding model.It is found that the hybridization of π-σ states caused by the curvature produces an energy gap at the vicinity of the Fermi level.Such effects are obvious for the small zigzag and chiral single-walled carbon nanotubes.The energy gaps decrease as the diameters and the chiral angles of the tubes increase,while the top of the valence band and the bottom of the conduction band of armchair tubes cross at the Fermi level.The numeral results agree well with the experimental results.     

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.     

研究型固体物理课程教学探索与实践

介绍了研究型教学的主要特点,重点论述了研究型固体物理课程的设计和实践.固体物理课程教学中,针对教学目标、教学内容、教学方法和考核方式等进行了研究型教学的改革尝试,提高了学生的研究素质,取得了良好的教学效果,为提高教学质量和人才培养质量提供了新的思路和方法.     

Quantum transport through a multi-quantum-dot-pair chain side-coupled with Majorana bound states

We investigate the quantum transport properties through a special kind of quantum dot(QD) system composed of a serially coupled multi-QD-pair(multi-QDP) chain and side-coupled Majorana bound states(MBSs) by using the Green functions method,where the conductance can be classified into two kinds:the electron tunneling(ET) conductance and the Andreev reflection(AR) one.First we find that for the nonzero MBS-QDP coupling a sharp AR-induced zero-bias conductance peak with the height of e~2/h is present(or absent) when the MBS is coupled to the far left(or the other) QDP.Moreover,the MBS-QDP coupling can suppress the ET conductance and strengthen the AR one,and further split into two sub-peaks each of the total conductance peaks of the isolated multi-QDPs,indicating that the MBS will make obvious influences on the competition between the ET and AR processes.Then we find that the tunneling rate ΓLis able to affect the conductances of leads L and R in different ways,demonstrating that there exists a ΓL-related competition between the AR and ET processes.Finally we consider the effect of the inter-MBS coupling on the conductances of the multi-QDP chains and it is shown that the inter-MBS coupling will split the zero-bias conductance peak with the height of e~2/h into two sub-peaks.As the inter-MBS coupling becomes stronger,the two sub-peaks are pushed away from each other and simultaneously become lower,which is opposite to that of the single QDP chain where the two sub-peaks with the height of about e~2/2h become higher.Also,the decay of the conductance sub-peaks with the increase of the MBS-QDP coupling becomes slower as the number of the QDPs becomes larger.This research should be an important extension in studying the transport properties in the kind of QD systems coupled with the side MBSs,which is helpful for understanding the nature of the MBSs,as well as the MBS-related QD transport properties.     

Quantum Transport through a Rigidly Connected Double Quantum-Dot Shuttle

We design a double quantum-dot （QD） shuttle （DQDS） model including two rigidly connected QDs that are softly linked to two leads via deformable organic materiaJs. Based on the full quantum mechanical approaches we explore the influences on the electron transport induced by the electrical and mechanical degrees of freedom. First of a/l the modified rate equations of the DQDS are derived theoretically and then a numerical investigation on the quantum transport through the DQDS is performed. For the classical DQDS, the time-dependent evolutions of the electron- occupation probabilities and the currents flowing through the DQDS show the periodic oscillations with their periods determined by the oscillation period of the DQDS. Both the mechanical oscillation amplitude and the interdot coupling can play crucial roles in adjusting the peak shapes of the currents and the probabilities. For the quantum DQDS, the current and electron-occupation probabilities of the DQDS evolve into a stationary state as time goes on, with no periodical oscillations observed. As a consequence, the sharp differences of the time-dependent properties between the c/assica/ and quantum DQDS systems are clearly demonstrated, which should be greatly helpful in designing new nanoelectromechanical devices. Also, this work is of great significance to understanding the kind of rigidly connected QD shuttle systems that have more than two QDs.