光探测器偏压调制技术的理论研究

为了简化和改善光载无线通信系统,提出了一种光探测器偏压调制技术,利用PIN光探测器(PIN-PD)和单行载流子光探测器(UTC-PD)的输出光电流随偏压变化的特性进行调制.采用光探测器偏置调制技术,光电探测和调制可以在一个光探测器上同时实现.研究表明当入射光功率为2.93dBm时,PIN-PD在10GHz射频副载波上的调制带宽为800 MHz,UTC-PD在150GHz射频副载波上的调制带宽为18.75GHz.调制带宽随入射光功率的增大而增大,当入射光功率为12.93dBm时,UTC-PD在150GHz射频副载波上的调制带宽可达25GHz.调制深度与正弦偏压调制信号的最小值有关.     

Optical Properties of Hexagonal and Cubic ZnS Nanoribbons: Experiment and Theory

Optical properties of hexagonal and cubic ZnS nanoribbons are studied by using valence electron energy loss spectroscopy （VEELS） and ab initio band structure calculations. The peaks in VEELS are assigned to interband transitions by comparing the interband transition strengths with the calculated densities of states. The optical properties are deduced from the experimental VEELS, and the theoretical calculations give consistent results. This combination of experimental and theoretical approaches provides a comprehensive understanding of the optical properties of polytype ZnS.     

A pair of integrated optoelectronic transceiving chips for optical interconnects

In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%.On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.     

高速高饱和单行载流子光探测器的设计与分析

设计了一种In P基的背入射台面结构的单行载流子光探测器.通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层,使得光探测器同时具备了高速和高饱和电流特性.理论分析表明,在光敏面为14μm2、反向偏压为2 V条件下,该器件的3 d B带宽可达58 GHz,直流饱和电流高达158 m A.在大功率光注入条件下,详细分析了光探测器带宽降低和电流饱和现象,得出能带偏移和电场坍塌是其根本原因的结论.     

自组织InAs/GaAs量子点垂直排列生长研究

利用自组织生长InAs/GaAs量子点的垂直相关排列机制，生长了上下两层用6.5nm GaAs间隔的InAs结构.下层InAs已经成岛，由于应力传递效应，上层InAs由二维生长向三维成岛生长的转变提前发生，临界厚度从1.7ML变成小于1.5ML.透射电子显微镜截面象显示形成上下两层高度差别很大的InAs量子点，但是由于两层量子点之间存在强烈的电子耦合，光致发光谱中只有与包含大量子点的InAs层相对应的一个发光峰.     

电子辐照诱发固态相变导致的氮化硼纳米结构生长

报道了N+离子轰击产生的氮化硼(BN)纳米结构,及在电子辐照时结构演化的高分辨透射电子显微镜的原位测定结果.应当强调的是,这种类富勒烯和发夹结构的演化,实际上是电子辐照诱发固态相变的发展,观察中发现的一些BN颗粒、卷曲物,可以被认为是类富勒烯等纳米结构形成的前体或早期阶段.提出了一种类富勒烯等结构的电子辐照动力学模型,并进行了讨论. 关键词： 氮化硼 电子辐照 透射电子显微镜 氮化硼纳米形成物     

海藻酸锌纤维热降解法制备氧化锌纳米结构

采用天然高分子海藻酸钠为原料, 以氯化锌水溶液为凝固浴, 通过湿法纺丝技术成功制备了海藻酸锌(Alg-Zn)纤维.通过在空气中不同温度下对所得海藻酸锌纤维进行热处理, 得到了多种ZnO纳米结构. 利用热失重分析(TG)、X射线衍射(XRD)、电子能量损失谱(EELS)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等手段对产物的组成、形貌和微观结构进行了详细表征. 结果表明, 焙烧温度和时间对所得ZnO纳米结构的尺寸和形貌具有重要影响; 800 ℃下热处理24 h以上可以得到直径约为120 nm的ZnO纳米棒. 通过仔细考察不同热处理时间得到的ZnO纳米结构, 提出了在焙烧条件下ZnO纳米棒的生长机理.     

Bias-free operational monolithic symmetric-connected photodiode array

We have designed and fabricated zero-bias operational two-element symmetric-connected photodetector arrays(SC-PDAs).The designed SC-PDAs have higher saturation currents,larger RF power,and better frequency responses than the single photodetector(PD)under zero bias.The bias-free SC-PDA with 15μm diameter of each PD demonstrated a 3 d B bandwidth of 19.4 GHz at 0.5 m A.The RF saturation photocurrent and maximum RF output power of the SC-PDA with 40μm,50μm,and 60μm diameters under zero bias are over9.31 m A and-5.86 d Bm at 3 GHz,14.52 m A and 1.17 d Bm at 1 GHz,and 13.72 m A and-1.76 d Bm at 1 GHz,respectively.     

Integrated optoelectronic chip pair for transmitting and receiving optical signals simultaneously

An integrated optoelectronic chip pair, which can transmit and receive optical signals simultaneously, is proposed in this Letter. The design and optimization of its key structure, the vertical cavity surface emitting laser's distributed Bragg reflector, are presented. Analysis is also done for its influence on the integrated chip's performance. Moreover, the chip pair's performance under dynamic conditions is analyzed. Their 3 dB modulation bandwidths are higher than 10 GHz, and their 3 dB photo-response bandwidths are around 23 GHz. Their applications will further improve the performances of the optical interconnects.     

用等效F—P方法研究微腔激光器DBR腔的特性

采用等效F－P腔方法对VCSEL中上、下两个DBR构成的微腔进行了研究,计算并讨论了不同周期数的DBR对微腔结构的反射率的影响。结果表明,激射波长两侧存在对称的反射率峰值。随着上下层DBR周期数的增加：峰值带逐渐变平、变宽;中心波长的凹隐逐渐变细、变窄;考虑吸收损耗,中心波长反向率逐渐增加。