点接触金属/Pr0.7Ca0.3MnO3/Pt结构稳定的低电流电阻开关特性

利用自主开发的导电原子力显微镜控制Pt,W探针构成点接触金属/Pr0.7Ca0.3MnO3(PCMO)/Pt三明治结构,对其电流-电压(I-V)及脉冲诱导电阻开关(EPIR)特性进行了研究.研究发现,在10 nA限流下两种电极对应结构的I-V都表现出相当稳定的双极性电阻开关特性,以及大于100的电阻开关比.进一步测试发现,点接触W/PCMO/Pt器件具有在10 nA限流下稳定的EPIR特性以及100 pA限流下重复的双极性电阻开关特性.此电流比已报道的电流低3个数量级,表明此结构在低功耗存储器件方面的潜在应用.通过对比样品不同位置、不同限流、不同接触面积点接触Pt/PCMO/Pt的I-V回滞特性,把点接触器件在低电流下稳定、显著的电阻开关效应归结于小的器件面积导致强的局域电场加强了O离子迁移效应.     

发展固态量子信息与计算的实验研究

量子计算与量子信息是21世纪基础和应用科学研究的一大挑战.要实现实用意义上的量子信息和量子计算,必须解决量子比特系统的可拓展性问题.基于现代半导体技术的固态量子系统,其应用和最终产业化的可行性较高.然而,固态量子体系受周边环境的影响比较严重,控制其退相干,维持其量子状态的难度更高.实验固态量子计算的研究是个新的领域,尚无实用的技术和方法. 文章介绍了中国科学院物理研究所固态量子信息和计算实验室近几年来新开辟的自旋、冷原子、量子点(包括原子空位)、功能氧化物和关联体系等固态量子信息的新载体和同量子计算与量子信息相关的科学与技术难题的实验研究.     

Anomalous Magneto-Transport Properties of Epitaxial Single-Crystal Bi Films on Si（111）

Anomalous transport properties of 40-nm-thick single-crystal Bi（111） films grown on Si（111）-7 × 7 substrates is investigated. The magnetoresistance （MR） of the films in perpendicular magnetic field shows a regular positive behavior in the temperature range 2–300K, the MR in parallel field （B｜｜） displays a series of interesting features. Specifically, we observe a change of the MR （B｜｜） behavior from positive to negative when the temperature is below 10K. In the range 10–170 K, the MR （B｜｜） is negative in the investigated field of 9T. When T 〉 170 K, a positive MR appears in the high field regime. The low temperature MR（B｜｜） behavior in the parallel field can be understood by the competition between weak localization and weak anti-localization （WAL）. Furthermore, our results suggest that the WAL is dominated by the interface carriers.     

Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7 Ca0.3MnO3/Pt Devices

Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis： clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply based on whether the Gibbs free energy of oxidation for the metal tip is lower or higher than that of PCMO, respectively. While the clockwise hysteresis can be attributed to electric field induced oxidation/reduction, the counter clockwise hysteresis can be explained by oxygen vacancy migration in an electrical field. Alternating-current conductance spectra also reveal distinct hopping barriers between these two categories of devices at high resistive states.     

Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

<正>Transport characteristics of single crystal bismuth films on Si(lll)-7x7 are found to be metallic or insulating at temperatures below or above T_C,respectively.The transition temperature T_C decreases as the film thickness increases. By combining thickness dependence of the films resistivity,we find the insulating behaviour results from the states inside film,while the metallic behaviour originates from the interface states.We show that quantum size effect in a Bi film,such as the semimetal-to-semiconductor transition,is only observable at a temperature higher than T_C.     

点接触金属/Pr$lt;sub$gt;0.7$lt;/sub$gt;Ca$lt;sub$gt;0.3$lt;/sub$gt;MnO$lt;sub$gt;3$lt;/sub$gt;/Pt结构稳定的低电流电阻开关特性

利用自主开发的导电原子力显微镜控制Pt，W探针构成点接触金属/Pr_0.7Ca_0.3MnO₃（PCMO）/Pt三明治结构，对其电流-电压（I-V）及脉冲诱导电阻开关（EPIR）特性进行了研究.研究发现，在10 nA限流下两种电极对应结构的I-V都表现出相当稳定的双极性电阻开关特性，以及大于100的电阻开关比.进一步测试发现，点接触W/PCMO/Pt器件具有在10 nA限流下稳定的EPIR特性以及100 pA限流下重复的双极性电阻开关特性.此电流比已报道的电流低3个数量级，表明此结构在低功耗存储器件方面的潜在应用.通过对比样品不同位置、不同限流、不同接触面积点接触Pt/PCMO/Pt的I-V回滞特性，把点接触器件在低电流下稳定、显著的电阻开关效应归结于小的器件面积导致强的局域电场加强了O离子迁移效应. 关键词： 脉冲诱导电阻开关 电场下氧离子迁移 电阻开关     

Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

We report that fully transparent resistive random access memory(TRRAM) devices based on ITO/TiO2/ITO sandwich structure,which are prepared by the method of RF magnetron sputtering,exhibit excellent switching stability.In the visible region(400-800 nm in wavelength) the TRRAM device has a transmittance of more than 80%.The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage,while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability.The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO 2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.     

缺陷分布对Ag-SiO2薄膜电阻翻转效应的影响

通过改变制备条件,研究了Ag-SiO₂薄膜中的缺陷对电阻翻转效应的影响.对比不同的热处理实验条件, 发现在120 ℃退火的样品经forming过程后具有稳定的电阻转变特性;另一方面, 在Ar/O₂混合气氛下生长的SiO₂具有比在纯Ar下生长的样品更加稳定、重复的电阻转变特性. 通过实验分析,表明热处理、电场作用和样品制备气氛可以改变、调节样品中的缺陷分布 (Ag填隙原子和氧空位缺陷),从而导致Ag-SiO₂中基于缺陷的导电通道结构的形成和湮灭, 提出了提高电阻翻转稳定性的必要条件.