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在相分离La0.33Pr0.34Ca0.33MnO3薄膜体系中发现了大的交换偏置效应.在4 K时,交换偏置场的大小达到了约1 kOe.交换偏置效应可能源自薄膜内禀的电子相分离特性或薄膜的表面效应.交换偏置效应表现出强的温度、冷却磁场以及厚度依赖的关系.  相似文献   
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MICAtronics, based on the functional oxide/mica heterostructures, has recently attracted much attention due to its potential applications in transparent, flexible electronics and devices. However, the weak van der Waals interaction decreases the tolerable lattice mismatch and thus limits the species of function oxides that are able to be epitaxially grown on mica. We successfully fabricate relatively high-quality epitaxial anatase TiO_2 thin films on mica substrates. Structural analyses reveal that the carefully chosen growth temperature(650℃) and suitable crystalline phase(anatase phase) of TiO_2 are the key issues for this van der Waals epitaxy. Moreover, as a buffer layer, the TiO_2 layer successfully suppresses the decomposition of BiFeO_3 and the difficulty of epitaxial growth of BiFeO_3 is decreased. Therefore, relatively high-quality anatase TiO_2 is proved to be an effective buffer layer for fabricating more functional oxides on mica.  相似文献   
3.
Nan Zhang 《中国物理 B》2021,30(8):87304-087304
As an elemental semiconductor, tellurium has recently attracted intense interest due to its non-trivial band topology, and the resulted intriguing topological transport phenomena. In this study we report systematic electronic transport studies on tellurium flakes grown via a simple vapor deposition process. The sample is self-hole-doped, and exhibits typical weak localization behavior at low temperatures. Substantial negative longitudinal magnetoresistance under parallel magnetic field is observed over a wide temperature region, which is considered to share the same origin with that in tellurium bulk crystals, i.e., the Weyl points near the top of valence band. However, with lowering temperature the longitudinal magnetoconductivity experiences a transition from parabolic to linear field dependency, differing distinctly from the bulk counterparts. Further analysis reveals that such a modulation of Weyl behaviors in this low-dimensional tellurium structure can be attributed to the enhanced inter-valley scattering at low temperatures. Our results further extend Weyl physics into a low-dimensional semiconductor system, which may find its potential application in designing topological semiconductor devices.  相似文献   
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在相分离La0.33Pr0.34Ca0.33MnO3薄膜体系中发现了大的交换偏置效应.在4K时,交换偏置场的大小达到了约1kOe.交换偏置效应可能源自薄膜内禀的电子相分离特性或薄膜的表面效应.交换偏置效应表现出强的温度、冷却磁场以及厚度依赖的关系.  相似文献   
5.
等离激元是金属中自由电子的集体振荡,其在物理,生物、化学、能源、信息等领域具有重要的应用前景.近些年来对等离激元量子效应研究的深入开展使得等离激元研究迈入了新阶段.本文首先简要介绍了等离激元的两个基本特性:光压缩效应和局域电场增强效应;随后回顾了量子等离激元方面的最新的进展,包括量子纠缠效应,量子尺寸效应,量子遂穿效应,等离激元在台阶势垒处的反射与激发,等离激元对电子相干效应的增强;最后对量子等离激元研究进行了总结和展望.  相似文献   
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利用低温扫描隧道显微镜对Si(111) 7× 7表面的孤立C60 分子成像 ,结合局域密度泛函方法计算 ,确定了C60 在不同吸附位置的分子取向 .同时进行的扫描隧道谱揭示了C60 吸附后的局域电子态 .  相似文献   
7.
曾长淦 《物理》2008,37(4):220-222
对在Ge(111)表面沿着〈110〉方向外延生长的单斜FeGe纳米线进行研究,结果发现,虽然块体单斜FeGe相是反铁磁性,其纳米线却在200 K以下表现出强铁磁有序.每个Fe原子的磁矩为0.8μB.密度泛函计算揭示外延产生的晶格压缩使类派尔斯反铁磁基态失稳,从而稳定实验观察到的铁磁性.  相似文献   
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Epitaxial graphene grown on silicon carbide(Si C/graphene) is a promising solution for achieving a highprecision quantum Hall resistance standard. Previous research mainly focused on the quantum resistance metrology of n-type Si C/graphene, while a comprehensive understanding of the quantum resistance metrology behavior of graphene with different doping types is lacking. Here, we fabricated both n-and p-type Si C/graphene devices via polymer-assisted molecular adsorption and conducted systematic...  相似文献   
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