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We report the formation and local electronic structure of Ge clusters on the Si(111)-7×7 surface studied by using variable temperature scanning tunnelling microscopy (VT-STM) and low-temperature scanning tunnelling spectroscopy (STS). Atom-resolved STM images reveal that the Ce atoms are prone to forming clusters with 1.0 nm in diameter for coverage up to 0.12 ML. Such Ce clusters preferentially nucleate at the centre of the faulted-half unit cells, leading to the 'dark sites' of Si centre adatoms from the surrounding three unfaulted-half unit cells in filled-state images. Biasdependent STM images show the charge transfer from the neighbouring Si adatoms to Ce clusters. Low-temperature STS of the Ce clusters reveals that there is a band gap on the Ce cluster and the large voltage threshold is about 0.9 V.  相似文献   
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徐明春  颜世申  刘宜华  黄佶 《物理学报》1997,46(7):1420-1426
Co-Zr/Pd多层膜由高频溅射方法制得.磁性合金Co-Zr层厚度固定为1.8nm,改变Pd层厚度0.5—6nm.由振动样品磁强计测量,发现随Pd层厚度增加,磁化强度发生周期性振荡变化,周期约为1nm,这是由Pd层的极化振荡引起的.经X射线衍射测得Pd层厚度超过1.3nm时,磁性合金Co-Zr层发生晶化,而厚的Co-Zr单层膜是非晶结构.X射线大角衍射图中的超晶格峰表明,在Co-Zr层和Pd层之间存在相关生长.而且还发现,随Pd层厚度增加,样品在垂直膜面方向的晶粒尺寸及fcc(111)面的面间距发生周期性 关键词:  相似文献   
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