排序方式: 共有13条查询结果,搜索用时 15 毫秒
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为在能量天平动圈位移测量中实现大范围纳米精度法-珀干涉绝对距离测量, 提出了声光移频器双通道配置, 实现了调谐范围为200 MHz的可调谐频差. 通过分析声光移频器调制带宽与衍射效率的平衡与入射光束聚焦透镜的关系, 确定透镜的最佳焦距范围; 利用零级光斑分布特点准确定位入射光束, 保证一级衍射光束质量. 声光移频器在调制带宽内的实验单通道和双通道峰值衍射效率分别为79.54%, 61.41%; 声光移频器双通道配置输出的一级衍射光束与入射本征光束的拍频范围为440-640 MHz, 是单通道调制带宽输出220-320 MHz的两倍, 信噪比好. 理论分析表明, 声光移频器双通道配置方法实现的可调谐频差可测量腔长变化范围约为53 mm的折叠法-珀腔. 相似文献
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为了研究氮气在宽光谱范围内的色散特性,基于气体色散理论,在标准条件下(温度为293.15K,气压为101325Pa),利用二阶Sellmeier公式和最小二乘法拟合得到氮气在0.145~2.058μm波长范围内的色散公式。该公式在全波段范围内的不确定度约为2.1×10-7,与原始测量数据的准确度一致。与现有色散公式相比,该公式的适用波长范围更宽,可提供氮气在0.27~0.47μm波段更多的折射率信息,具有较广泛的适用性。通过实验测量氮气在633nm处的折射率验证了该公式的有效性。 相似文献
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Mixed polarization in determining the film thickness of a silicon sphere by spectroscopic ellipsometry 下载免费PDF全文
The effect of a spherical shape on the measurement result of spectroscopic ellipsometry (SE) is analyzed,and a method to eliminate this effect is proposed.Based on the simulation result of the SE measurement on a silicon sphere by ray tracking,we find that the sphere makes the parallel incident beam of the SE be divergent after reflection,and the measurement error of the SE caused by this phenomenon is explained by the mixed polarization theory.By settling an aperture in front of the detector of the SE,we can almost eliminate the error.For the silicon sphere with a diameter of 94 mm used in the Avogadro project,the thickness error of the oxide layer caused by the spherical shape can be reduced from 0.73 nm to 0.04 nm by using the proposed method.The principle of the method and the results of the experimental verification are presented. 相似文献
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利用氧化锌溶胶-凝胶(Sol-Gel)、锌盐乙醇溶液(ES)和氧化锌纳米粒子溶液(NP)三种不同的籽晶层前驱液,在ITO衬底上通过化学浴沉积方法(CBD)制备出了一维氧化锌纳米棒阵列薄膜,并在所制备的氧化锌纳米棒阵列薄膜上构筑了具有“三维”异质结结构的PbS量子点太阳能电池.通过扫描电镜(SEM)、X射线衍射(XRD)和透射光谱分析等研究了籽晶层对氧化锌纳米棒阵列薄膜形貌、结构和光学性质的影响;结合电池性能测试结果,比较分析了“三维”异质结结构和“平面”异质结结构对电池性能的影响.结果表明:在ES籽晶层上生长的氧化锌纳米棒阵列薄膜的取向性最好,Sol-Gel次之,NP最差;在ES和Sol-Gel籽晶层上生长2h的样品透射率在80;左右;与“平面”异质结结构PbS量子点电池相比,基于氧化锌纳米棒阵列薄膜制备的“三维”异质结结构电池的短路电流可提高40;,表明“三维”异质结结构有利于载流子的分离和输运. 相似文献
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利用光纤飞秒光频梳和外腔可调谐半导体激光器, 建立了一套双频He-Ne激光器频率测量系统. 选用铷钟作为系统的频率基准, 通过将外腔半导体激光锁定至光频梳使得其频率溯源至铷钟, 再利用外腔可调谐半导体激光与双频He-Ne激光器输出的正交偏振激光拍频, 同时测量两路正交偏振激光频率. 将可调谐半导体激光器锁定至光频梳第1894449个梳齿, 其绝对频率为473612190000.0±2.7 kHz, 相对不确定度为5.7×10-12. 对商品双频He-Ne激光器进行频率测量实验, 双频He-Ne激光器水平方向偏振激光频率均值为473612229934 kHz, 竖直方向偏振激光频率均值为473612232111 kHz, 平均时间为1024 s的相对Allan标准差为5.2×10-11, 频差均值为2.177 MHz, 标准偏差为2 kHz. 相似文献
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Mixed polarization in determining the film thickness of a silicon sphere by spectroscopic ellipsometry 下载免费PDF全文
The effect of a spherical shape on the measurement result of spectroscopic ellipsometry (SE) is analyzed, and a method to eliminate this effect is proposed. Based on the simulation result of the SE measurement on a silicon sphere by ray tracking, we find that the sphere makes the parallel incident beam of the SE be divergent after reflection, and the measurement error of the SE caused by this phenomenon is explained by the mixed polarization theory. By settling an aperture in front of the detector of the SE, we can almost eliminate the error. For the silicon sphere with a diameter of 94 mm used in the Avogadro project, the thickness error of the oxide layer caused by the spherical shape can be reduced from 0.73 nm to 0.04 nm by using the proposed method. The principle of the method and the results of the experimental verification are presented. 相似文献
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利用飞秒光频梳、外腔可调谐半导体激光器和法布里-珀罗干涉仪建立了一套压电陶瓷亚纳米级闭环位移控制系统. 将可调谐半导体激光器锁定至光频梳, 通过精确调谐光频梳的重复频率, 实现了半导体激光器在其工作频率范围内的精密调谐. 利用Pound-Drever-Hall锁定技术将带有压电陶瓷的法布里-珀罗腔锁定至半导体激光器, 进而通过频率发生系统控制压电陶瓷产生亚纳米级分辨率的位移. 实验研究发现锁定至光频梳后可调谐半导体激光器1 s的Allan标准偏差为1.68×10-12, 将其在30.9496 GHz范围内进行连续闭环调谐, 可获得压电陶瓷的位移行程约为4.8 μm; 以3.75 Hz的步长扫描光频梳的重复频率, 实现了压电陶瓷的450 pm闭环位移分辨率并测定了压电陶瓷的磁滞特性曲线. 该系统不存在非线性测量误差, 且激光频率及压电陶瓷位移均溯源至铷钟频率源.
关键词:
光频梳
压电陶瓷
法布里-珀罗腔
可调谐半导体激光器 相似文献
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Determination of Mean Thickness of an Oxide Layer on a Silicon Sphere by Spectroscopic Ellipsometry 下载免费PDF全文
One of the biggest obstacles to reduce the uncertainty of the Avogadro constant NA is such that there will be an oxide layers on the surface of a silicon sphere. The thickness of this layer is measured by a modified spectroscopic ellipsometer, which can eliminate the influence of the curved surface, and the results are calibrated by x-ray reflectivity. Fifty positions distributed nearly uniformly on the surface of the silicon sphere are measured twice. The results show that the mean thickness of the overall oxide layer is 3.75 nm with the standard uncertainty of 0.21 nm, which means that the relative uncertainty component of NA owing to this layer can be reduced to 1.2 × 10^-8. 相似文献