排序方式: 共有46条查询结果,搜索用时 31 毫秒
1.
促进其线性频散特征另一种形式的Bousinesq方程 总被引:5,自引:1,他引:5
Bousinesq方程能够用于模拟表面重力波传播过程中的折射、绕射、反射以及浅化,非线性作用等现象.用不同垂直积分方法所得到的二维Boussinesq方程形式具有不同的线性频散特征.采用两个不同的水深层的水平速度变量组合,推导出一个新形式的Bousinesq方程.通过对其参数的设置可得到精确的线性频散解Pade近似4阶精度.其适用范围已由原来的浅水,向深水拓进.相速误差小于2%,其拓展适用范围可达到08个波长水深.应用所得到的新型Bousinesq方程,采用有限差分法,对经典工况进行了数值模拟,其计算结果表明,计算值与物模实验值吻合较好.这说明本文新形式的Boussinesq方程对变水深非线性效应所产生的能量频散有着较为精确的描述 相似文献
2.
促进其线性频散特征另一种形式的Bousinesq方程 总被引:1,自引:0,他引:1
Bousinesq方程能够用于模拟表面重力波传播过程中的折射、绕射、反射以及浅化,非线性作用等现象.用不同垂直积分方法所得到的二维Boussinesq方程形式具有不同的线性频散特征.采用两个不同的水深层的水平速度变量组合,推导出一个新形式的Bousinesq方程.通过对其参数的设置可得到精确的线性频散解Pade近似4阶精度.其适用范围已由原来的浅水,向深水拓进.相速误差小于2%,其拓展适用范围可达到08个波长水深.应用所得到的新型Bousinesq方程,采用有限差分法,对经典工况进行了数值模拟,其计算结果表明,计算值与物模实验值吻合较好.这说明本文新形式的Boussinesq方程对变水深非线性效应所产生的能量频散有着较为精确的描述 相似文献
3.
应用势流理论,采用递推函数方法推导出一个新形式的Bousinesq方程。通过对新方程的参数设置,可以讨论出Boussinesq方程发展趋势和不同的发展形式。对浅水波动的描述方程,Boussinesq方程的发展趋势为适用水深范围的拓展。拓展应用范围的大小则由其方程频散特征向Airy波频散解逼近程度来决定。而Bousineq方程又不同于Airy波,主要原因是Boussinesq方程中含有线性频散项,Airy波则只是长波首项近似,无线性频散项。其频散特征为精确的线性频散解。对实际水波传播而言,Airy波理论的局限性是不言而喻的。 相似文献
4.
Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy 下载免费PDF全文
We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well structure tensile AlInGaAs are used as barriers to partially compensate for the significant compressive strain in the wells, the strain compensation effects are confirmed by x-ray measurement. The photoluminescence spectra of the sample are dominated by the excitonic recombination peak in the whole temperature range. The thermal quenching, peak energy shift and line-width broadening of the PL spectra are analysed in detail, the mechanisms are discussed. 相似文献
5.
Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence 下载免费PDF全文
The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K.The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K.The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth.The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes.The incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth. 相似文献
7.
8.
9.
通过FTIR光学信息研究液态和固态磷脂酶D的二级结构,结果表明FTIR光学信息是一种有效的蛋白质分子二级结构研究方法。FTIR的光学信息分析表明冻干胁迫下,磷脂酶D的FTIR光学信息及二级结构发生较大变化。在磷脂酶D活性构象时的pH冻干使磷脂酶Dα螺旋大大下降,无规卷曲大大上升,β折叠几乎没有变化,说明PLD蛋白质分子空间有序构象解体严重。功能性试验表明,磷脂酶D二级结构的变化直接导致了其活性发生很大变化。 相似文献
10.
The structural and optical characteristics of InP-based compressively strained InGaAs quantum wells have been significantly improved by using gas source molecular beam epitaxy grown InAs/Ino.53Ga0.47As digital alloy triangular well layers and tensile Ino.53Ga0.47As/InAiGaAs digital alloy barrier layers. The x-ray diffraction and transmission electron microscope characterisations indicate that the digital alloy structures present favourable lattice quality. Photo- luminescence (PL) and electroluminescence (EL) measurements show that the use of digital alloy barriers offers better optical characteristics than that of conventional random alloy barriers. A significantly improved PL signal of around 2.1μm at 300 K and an EL signal of around 1.95μm at 100 K have been obtained. 相似文献