单频光纤激光器研究进展

单频光纤激光器在激光武器、激光雷达、空间激光通信、相干光通信、高精度光谱测量、引力波探测等领域有着广泛的应用前景,受到了研究者的极大关注。从1.0,1.5,2.0μm三种典型工作波段进行归类,综述了单频光纤激光器的国内外研究现状,内容涵盖了单频光纤激光产生、噪声抑制、线宽压窄、连续与脉冲单频激光放大等技术。此外,结合了本课题组在单频光纤激光器方面的研究工作,着重介绍了基于单振荡器和主振荡功率放大器结构的单频光纤激光器近年来的研究进展,并展望了单频光纤激光器的未来发展方向。     

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate

GaN-based micro light emitting diodes(micro-LEDs) on silicon(Si)substrates with 40μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques.From currentvoltage curves,the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10~(-8) A/cm~2 indicate good electrical characteristics.As the injection current increases,the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays,because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs.Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures,the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.