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Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction 下载免费PDF全文
Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV-Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms. 相似文献
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采用溶胶-凝胶旋涂法在Si(111)衬底上生长了ZnO薄膜,并用荧光光谱、原子力显微镜和XRD对ZnO薄膜样品进行了分析.结果表明,溶胶-凝胶旋涂法制备的ZnO薄膜为纤锌矿结构,其c轴取向程度与热处理温度有很大的关系.当热处理温度小于550℃时,氧化锌薄膜在室温下均有较强的紫外带边发射峰,而可见波段的发射很弱;当热处理温度高于550℃时,可见波段发射明显增强.对经过不同时间热处理的ZnO薄膜样品分析表明,氧化锌薄膜的荧光特性及表面形貌与热处理时间也有很大关系,时间过短可见波段的发射较强,但时间过长会导致晶
关键词:
ZnO薄膜
光致发光 相似文献
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