排序方式: 共有49条查询结果,搜索用时 15 毫秒
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双波长激光光源在干涉测量、非线性频率变换产生中红外及太赫兹波段相干辐射等方面有重要的应用.外腔面发射激光器具有输出功率高、光束质量好、发射波长可设计等突出优势,非常适合用于双波长的产生.用有源区为In0.185Ga0.815As/GaAs应变多量子阱、设计波长为960 nm,以及有源区为In0.26Ga0.74As/GaAsP0.02应变多量子阱、设计波长为1080 nm的两块半导体增益芯片,在一个共线Y型谐振腔中,获得了激光波长分别为953 nm和1100 nm的双波长输出,对应光谱线宽为1.1 nm和2.7 nm,波长间隔147 nm.室温下,每块增益芯片的抽运吸收功率均为5.8 W时,双波长激光器总的输出功率达到293 mW. 相似文献
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A mode locked Er-doped fiber laser based on a single-wall carbon nanotube saturable absorber is demonstrated. A high quality single-wall carbon nanotubes (SWCNTs) absorber film is fabricated by a polymer composite. The pulse duration is 488 fs with 9.6-nm spectral width at the center of 1564 nm. The repetition rate is 30.4 MHz. The maximum output power is 3 mW. And the single pulse energy is 0.1 nJ. 相似文献
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报道了激光二极管泵浦、采用半导体可饱和吸收镜(SESAM)实现的Nd:GdVO4连续被动锁模运转激光器,得到了较大功率输出(接近1 W)的连续锁模激光.设计了四镜z型折叠激光谐振腔,在不同曲率半径的腔镜及不同的腔长条件下,分别获得了重复频率为250 MHz和100 MHz的稳定连续锁模脉冲输出.采用透过率1%的输出耦合镜,在泵浦功率为6.9 W时,得到连续锁模激光输出功率970 mW,光-光转换率达到13.7%.理论上讨论了调Q锁模的抑制措施,并结合实验结果进行了分析,得到了1063 nm稳定连续锁模激光输出,锁模脉冲光谱宽度1.2 nm(FWHM),用自相关仪测得脉宽为15.1 ps. 相似文献
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生长了新型激光晶体Pr:GdVO4,经XRD分析可知生长的晶体与纯GdVO4晶体结构一致,晶体质量良好.室温下测试了晶体400~3000 nm范围内的吸收光谱.通过对吸收光谱研究,发现σ谱图中各吸收峰吸收强度更大,宜选择入射光传播方向和电矢量均垂直于光轴的方向进行激光实验.采用404 nm的激发源抽运Pr:GdVO4晶体,测试其荧光光谱,发现其在可见波段有宽且强荧光发射(604 nm、616 nm),对应于1D2→3H4.比较不同浓度晶体的荧光谱,荧光强度呈现如下趋势:0.5%>0.7%>0.32%. 相似文献
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LI Zhaohui 《Chinese Journal of Lasers》2002,11(5):321-323324
A novel Yb3+-doped fiber ring cavity laser pumped by a 977 nm laser diode is presented with its output laser wavelength of 1060 nm. Based on a fiber Bragg grating (FBG), the laser exhibits 0.20 nm line-width, 7.5 mW laser output power, 40 dB signal-to-noise ratio (SNR) and 66% slope efficiency.This paper proposed a ray-tracing model for the Martinez stretcher, derived the calculation formulae for the stretcher of a grating-spherical mirror system and discussed the error for the total dispersion resulted from the spatial dispersion. The calculated results show that the error could be ignored for the beam returned to the stretcher for the second pass in the wavelength range of 750 nm and 850 nm. 相似文献
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Compression of the self-Q-switching in semiconductor disk lasers with single-layer graphene saturable absorbers 下载免费PDF全文
We demonstrate the first use of single layer graphene for compressing self-Q-switching pulses in semiconductor disk lasers. The gain region of the semiconductor disk laser used InGaAs quantum wells with a central wavelength of 1030 nm. Due to self saturable absorption of the quantum wells, the disk laser emitted at the self-Q-switching state with a pulse width of 13 μs. By introducing the single layer graphene as a saturable absorber into the V-shaped laser cavity, the pulse width of the self-pulse was compressed to 2 μs with a lower pump power of 300 mW. As the pump power was increased, multiple pulses with the pulse width of 1.8 μs appeared. The compression factor was about 7.2. 相似文献
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