基于色散补偿光纤的高速光纤光栅解调方法

本文提出并论证了一种光纤光栅高速解调的新方法, 利用色散补偿光纤的色散效应, 将光纤光栅的波长漂移信息转换成时域信息. 采用脉冲激光器作为光源, 仅需一个光脉冲可获取单根光纤上所有光纤光栅的反射光脉冲, 再根据各个光栅反射回光脉冲的延时变化即可实现波长的解调. 本方法可用于准分布光纤光栅传感网络解调, 系统采用全光纤结构, 无需波长扫描, 大大提高了解调速度. 本文搭建了测试系统进行实验验证, 对3个光纤光栅组成的准分布式传感网络进行了解调, 实验结果表明, 解调出的光纤光栅布喇格波长线性度好, 解调速度最高可达1 MHz, 采样数据取10次平均后解调线性度可达0.9969, 解调误差约为27.8 pm.     

基于色散效应的光纤光栅高速高精度解调方法研究

利用普通单模光纤(SMF)与色散补偿光纤(DCF)分别具有正色散和负色散系数特性,实现光纤光栅阵列的高速高精度解调.系统采用全光纤结构,仅需发出单一高速光脉冲,即可根据反射光脉冲时延差同时获取各个光栅的波长与位置信息,大幅提高了光纤光栅解调速度;通过建立DCF-SMF双通道和色散差矫正模型,削弱了温度变化及色散值误差对系统解调精度的影响.实验表明,本方法解调速率可达1 MHz,解调过程受传感网络光纤及双通道温变影响较小,具有良好稳定性及高精度;5—75?C温度扰动实验中,传感网络传输光纤温变时系统解调均方差16.8 pm,DCF-SMF双通道受温度扰动时系统解调均方差为11.9 pm,恒温下系统长时间解调时均方差为6.4 pm;应力实验中,解调线性度可达0.9998,解调精度约为8.5 pm.     

Surface defects,stress evolution,and laser damage enhancement mechanism of fused silica under oxygen-enriched condition

Oxygen ions (O⁺) were implanted into fused silica at a fixed fluence of 1×10¹⁷ ions/cm² with different ion energies ranging from 10 keV to 60 keV. The surface roughness, optical properties, mechanical properties and laser damage performance of fused silica were investigated to understand the effect of oxygen ion implantation on laser damage resistance of fused silica. The ion implantation accompanied with sputtering effect can passivate the sub-/surface defects to reduce the surface roughness and improve the surface quality slightly. The implanted oxygen ions can combine with the structural defects (ODCs and E' centers) to reduce the defect densities and compensate the loss of oxygen in fused silica surface under laser irradiation. Furthermore, oxygen ion implantation can reduce the Si-O-Si bond angle and densify the surface structure, thus introducing compressive stress in the surface to strengthen the surface of fused silica. Therefore, the laser induced damage threshold of fused silica increases and the damage growth coefficient decreases when ion energy up to 30 keV. However, at higher ion energy, the sputtering effect is weakened and implantation becomes dominant, which leads to the surface roughness increase slightly. In addition, excessive energy aggravates the breaking of Si-O bonds. At the same time, the density of structural defects increases and the compressive stress decreases. These will degrade the laser laser-damage resistance of fused silica. The results indicate that oxygen ion implantation with appropriate ion energy is helpful to improve the damage resistance capability of fused silica components.