直流磁控溅射沉积含He钛膜的研究

研究了用He/Ar混合溅射气体的直流磁控溅射制备钛膜中，He的掺入现象.分析结果表明，大量的He原子（He/Ti原子比高达56%）被均匀地引入到Ti膜中，其He含量可由混合溅射气体的He分量精确控制.通过调节溅射参数，可实现样品中He的低损伤引入.研究还发现，溅射沉积的含氦Ti膜具有较高的He成泡剂量和高的固He能力，这可能是溅射沉积形成了纳米晶Ti膜所致.纳米晶Ti膜较粗晶材料具有很高浓度的He捕陷中心，使He泡密度增大而泡尺寸减小.随He引入量的增加，Ti膜的晶粒尺寸减小，He引起的晶体点阵参数和X射线衍射峰宽度增大，晶体的无序程度增加.Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%)incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage(or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retain He in sputtering Ti films is much higher than that in the coarse grain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With the increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase.     

背散射技术用于表面微分析

引 言 用离子加速器的离子束进行物质分析是近十年发展起来的有效的实验方法.它包括背散射、质子荧光分析和核反应三种方法.这些方法各有特点,互相补充[1],背散射用来分析样品表面下组成的变化或着杂质的深度分布特别合适.其主要优点是简便、直观、定量、可靠,对样品无损伤.与其它方法相比,既不需要对样品进行麻烦的剥层处理(例如离子溅射、化学腐蚀或研磨等),也不需霎依赖“标样”.使用l-2兆电子伏的4He离子束分析样品深度可达几千埃(采用质子束可增加分析深度达几个微米),通常深度分辨率可达200埃左右(采用掠角散射,深度分辨率可达20—30…     

高能离子注入硅形成导电埋层的光学表征

将能量为1.5MeV,剂量分别为1.5×10¹⁵cm^-2和7.5×10¹⁵cm^-2的磷离子注入<100>硅单晶,经1050℃,20s退火形成导电埋层,在500—4000cm^-1波数范围的红外反射谱中,观测到由自由载流子等离子体效应所致的干涉现象,在分析高能离子注入体系和自由载流子等离子体效应光学响应的特征基础上,通过计算机模拟红外反射谱,建立了深导电埋层的光学表征方法,应用这种表征方法,获得了导电埋层中的载流子分布、迁移率和高能注入离子的电激活率,模拟计算结果表明红外反射谱对载流子分布形状和模型中参量是敏感的,模拟计算的准确程度是高的,进行了模拟计算的结果与实验结果的比较。     

高速H2+离子轰击C靶诱发二次电子的发射行为与入射角的关系

运用Monte-Carlo方法结合半经验理论研究了高速H2+离子轰击C靶诱发二次电子的发射行为与入射角的关系。分别研究了电子发射产额与入射角以及发射统计性与入射角的关系。结果表明，由于H2+上的价电子的影响使得背向电子发射产额不遵守余弦倒数关系。斜入射时候的前向与背向电子产额的比值跟正入射时的情况不同。电子的发射统计跟入射角没有关系。标志偏离Poission分布的值 b，随入射能量的增加而增大。     

用低能离子溅射剥层和高能离子背散射组合方法进行薄膜原位分析

介绍了将离子枪组合于卢瑟福背散射分析靶室中构成Ｓｐｕｔｔｅｒｉｎｇ／ＲＢＳ原位分析实验装置,用低能离子溅射剥层与高能离子背散射组合对薄膜样品进行成分和深埋层分析方法．给出了对样品分析的三个例子．对Ａｕ／Ｓｉ样品的分析着重讨论了Ａｕ在Ａｒ＋溅射剥层时的溅射速率;对Ｓｉ／Ｇｅ Ｓｉ／Ｓｉ和ＷＳｉｘ／ＳｉＯ２／Ｓｉ样品的深埋层分析,提高了样品分析的深度分辨率．讨论了这一Ｓｐｕｔｔｅｒｉｎｇ／ＲＢＳ组合分析方法的优缺点和在薄膜材料研究中可能的应用 关键词：     

Annealing Behaviour of Helium Bubbles in Titanium Films by Thermal Desorption Spectroscopy and Positron Beam Analysis

Helium-containing Ti Glms are prepared using magnetron sputtering in the helium-argon atmosphere. Isochronal annealing at different temperatures for an hour is employed to reveal the behaviour of helium bubble growth. Ion beam analysis is used to measure the retained helium content. Helium can release largely when annealing above 970K. A thermal helium desorption spectroscopy system is constructed for assessment of the evolution of helium bubbles in the annealed samples by linear heating （OAK/s） from room temperature to 1500K. Also, Doppler broadening measurements of positron annihilation radiation spectrum are performed by using changeable energy positron beam. Bubble coarsening evolves gradually below 680K, migration and coalescence of small bubbles dominates in the range of 68-970 K, and the Ostwald ripening mechanism enlarges the bubbles with a massive release above 970K.     

用阻塞效应测量28Si 13.095MeV激发态能级寿命

改进Al单晶样品的处理方法,得到了高质量的样品。进行了Al单晶辐照损伤实验,直接测量了E_p=1565keV时²⁷Al(p,α)²⁴Mg共振所形成的²⁸Si 13.095MeV激发态能级寿命。采用MonteCarlo模拟和“分析”方法计算得到其寿命值τ=16.3±2.4as,对应的能级宽度Γ=40±6eV,与文献报道的共振产额法结果符合得较好。 关键词：     

近程碰撞对He+离子诱发背向电子发射贡献比例的计算

用Monte Carlo方法模拟了高速He+离子入射到C，Cu和Al固体表面所诱发的电子发射.用这个程序计算了背向的电子发射产额，并且同时计算了近程碰撞对总的背向电子发射产额的贡献比例，对C，Cu和Al其值分别是05，055和0.42.对在近程碰撞中产生的高能δ电子（E＞10O eV）对背向电子发射行为的影响也进行了详尽地讨论，只有那些能量为几百个eV的δ电子对产额的贡献比例较大.对于C靶，δ电子对电子阻止本领最大值附近的二次电子发射行为会产生影响.计算所得到的电子发射产额与实验结果符合得很好. 关键词： 二次电子发射 Monte Carlo模拟 近程碰撞 δ电子     

ABNORMAL ENERGY DEPENDENCE OF AXIAL MINIMUM CHANNELING YIELDS IN GexSi1-x/Si(100) STRAINED

An energy dependence of the axial minimum channeling yield in Ge_xSi_1-x/Si(100) Strained-layer superlattice is observed in the energy range of impinging He⁺ ione from 1.2 to 3.0 MeV. For [100] axial channeling, the measurements ere in agreement with what have been known in a single crystal. However, for [110] axial channeling, it is found that the minimum channeling yields increase markedly with the increase of He⁺ ion energy, which is contrary to the general channeling behaviors in a single crystal. A tentative model is suggested to explain this aberrance.     

用~3He→D核反应分析Ti中的D

用D-~3He核反应分析法分析中发生器用TiD_(?)靶中D的含量x.并利用Au-Si面垒探测器测量了质子能谱,获得了该探测器的灵敏层参量,仔细研究了半导体探测器对高能质子的响应.对质子射程同耗尽层厚度相当时的质子能谱进行的理论计算与实验现象一致. 关键词：