用肖特基电容电压特性数值模拟法确定调制掺杂AlxGa1-xN/GaN异质结中的极化电荷

研究发展了用肖特基电容电压特性数值模拟确定调制掺杂Al_xGa_1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al_0.22Ga_0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al_0.22Ga_0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN 关键词： xGa_1-xN/GaN异质结')" href="#">Al_xGa_1-xN/GaN异质结 极化电荷 电容电压特性 数值模拟     

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN／GaN Heterostructures

Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 10^12cm^-2eV^-1, and the time constant is about 1μs. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passlvate the surface states effectively.     

用肖特基电容电压特性数值模拟法确定调制掺杂Al_xGa_(1-x)N/GaN异质结中的极化电荷

研究发展了用肖特基电容 电压特性数值模拟确定调制掺杂AlxGa1 -xN GaN异质结中极化电荷的方法 .在调制掺杂的Al0 2 2 Ga0 78N GaN异质结上制备了Pt肖特基接触 ,并对其进行了C V测量 .采用三维费米模型对调制掺杂的Al0 2 2 Ga0 78N GaN异质结上肖特基接触的C V特性进行了数值模拟 ,分析了改变样品参数对C V特性的影响 .利用改变极化电荷、n AlGaN层掺杂浓度和肖特基势垒高度对C V曲线不同部分位置和形状影响不同 ,可以精确地求取极化电荷面密度 .通过模拟 ,得到Al0 2 2 Ga0 78N厚度为 45nm的调制掺杂Al0 2 2 Ga0 78N GaN异质结界面附近极化电荷面密度为 6 78× 10 1 2 cm- 2 .     

Pb(Zr0.53Ti0.47)O3/AlxGa1-xN/GaN异质结构的电容-电压特征

通过在调制掺杂Al0.22Ga0.78N/GaN异质结构上淀积Pb(Zr0.53Ti0.47)O3(PZT)铁电薄膜,我们发展了一种基于AlxGa1-xN/GaN异质结构的金属-铁电-半导体(MFS)结构.在高频电容-电压(C-V)特性测量中,发现Al0.22Ga0.78N/GaN异质界面二维电子气(2DEG)的浓度在-10V偏压下从1.56×1013cm-2下降为5.6×1012cm-2.由于PZT薄膜的铁电极化,在-10V偏压下可以观察到宽度为0.2V的铁电C-V窗口,表明在没有铁电极化方向反转的条件下,PZT/AlxGa1-xN/GaN MFS结构也能出现存储特性.因为2DEG带来的各种优点,可以认为AlxGa1-xN/GaN异质结构在以存储器为目标的MFS场效应晶体管中有重要应用.     

电容-电压法研究AlxGa1-xN/GaN异质结压电极化效应

制备了基于调制掺杂Al0.22Ga0.78N/GaN异质结的Pt/Al0.22Ga0.78N/GaN肖特基二极管.由于Al0.22Ga0.78N势垒层中的极化场不同,不同Al0.22Ga0.78N势垒层厚度的二极管的电容-电压特性显著不同.根据对样品电容-电压特性的数值模拟,在Al0.22Ga0.78N势垒层厚度为30nm和45nm的样品中,异质界面的极化电荷面密度为6.78×1012cm-2.在Al0.22Ga0.78N势垒层厚度为75nm的样品中,极化电荷面密度降为1.30×1012cm-2.这种极化电荷面密度的降低是由于GaN上Al0.22Ga0.78N势垒层由于厚度增加而产生应变的部分弛豫.本工作也提供了一种定量表征AlxGa1-xN/GaN异质结中极化电荷面密度的方法.     

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs).     

MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.[第一段]     

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate

GaN-based micro light emitting diodes(micro-LEDs) on silicon(Si)substrates with 40μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques.From currentvoltage curves,the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10~(-8) A/cm~2 indicate good electrical characteristics.As the injection current increases,the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays,because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs.Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures,the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.     

Blue InGaN light-emitting diodes with dip-shaped quantum wells

InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs).