非零色散位移光纤的制造新工艺研究

介绍了一种新的改进化学气相沉积法(MCVD)+气相轴向沉积法(VAD)预制棒制备工艺,该工艺按照归一化波导结构进行工艺设计和参数控制,即采用MCVD法制备归一化结构参数轴向一致的芯棒,然后采用VAD法轴向沉积相应的外包层,从而得到波导结构轴向均匀一致的预制棒.采用新工艺实验研究了非零色散位移光纤的制造过程,成功制造了波...     

Ultra-broad near-infrared emission of Bi-doped SiO2 Al2O3 GeO2 optical fibers

Bi-doped SiO 2 –Al 2 O 3 –GeO 2 fiber preforms are prepared by modified chemical vapor deposition (MCVD) and solution doping process. The characteristic spectra of the preforms and fibers are experimentally investigated, and a distinct difference in emission between the two is observed. Under 808-nm excitation, an ultra-broad near-infrared (NIR) emission with full-width at half-maximum (FWHM) of 495 nm is observed in the Bi-doped fiber. This observation, to our knowledge, is the first in this field. The NIR emission consists of two bands, which may be ascribed to the Bi 0 and Bi + species, respectively. This Bi-doped fiber is promising for broadband optical amplification and widely tunable laser.     

非零色散位移光纤的改进设计及制造

介绍了一种新颖的非零色散位移光纤结构设计方法及其MCVD+OVD制造工艺,所制备的光纤有效面积达到71 μm2以上.采用关键结构区域精确微扰方法,改进了光纤的色散特性.1550 nm处色散斜率由0.0715 ps/(nm2·km),分别减小至0.0605 ps/(nm2·km),0.0466 ps/(nm2·km),零色散波长由1500 nm附近移至1450 nm以下.测量表明,所得光纤具有优越的光学传输特性、抗弯曲性能和熔接性能,适用于C+L和S+C+L工作波长的大容量高速率长距离密集波分复用系统.光纤关键结构区域精确微扰是改进光纤性能的一种有效方法,该方法不限于MCVD工艺和非零色散位移光纤,对新型光纤的设计和生产具有积极的指导意义.