Yb~(3+)/Tm~(3+)共掺杂Sb_2O_4荧光粉的制备及上转换发光性质研究

高温固相法制备了Yb3+/Tm3+共掺的Sb2O4发光粉体,研究了其上转换发光性质。在980nm半导体激光器的激发下,样品发射较强的近红外(800nm)和较弱的蓝色(480nm)及红色(680nm)上转换发光。粉末样品中稀土Yb3+及Tm3+浓度对上转换发光性质具有显著的影响,随着Yb3+或Tm3+浓度的增加,上转换发光增强;Tm3+掺杂浓度达0.8%时其上转换发光强度达到最大,之后上转换发光随Tm3+浓度的增加而减弱,这是由于浓度猝灭引起的。探讨了粉末样品的上转换发光机理,在980nm激发下Tm3+的蓝光和近红外上转换发光均属于二光子的上转换发光过程。     

Investigation of the mechanism of upconversion luminescence in Er3＋/Yb3＋ co-doped Bi2Ti2O7 inverse opal

Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband nearinfrared (near-IR) emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1 100 to 1 650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi2-2 dimers. The precipitation of β-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass.