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PROPERITES OF HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS IRRADIATED BY EXCIMER PULSE LASER 下载免费PDF全文
A series of hydrogenated amorphous silicon carbide film (a-SiC:H) were prepared by rf plasma-enhanced chemical vapor deposition method. The optical band gap(Eoptg) of the films can be extended to 2.6eV. The as-deposited alma were then irradiated by a KrF excimer laser. During the irradiation process, hydrogen escaped out of the films, and the structure of the films was changed from an amorphous phase to mixed phases of nanocrystallites of silicon and amorphous silicon carbide. The room-temperature dark conductivity of the laser irradiated films is 6-7 orders of magnitude larger than that of the as-deposited films, which was attributed to the modification of the conductivity mechanism resulting from the structural change. 相似文献
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A coupling equation of directional solidification of CBr4(α)-C2Cl6(β) eutectic is solved numerically. Profiles and profile bifurcation of the solidifying interface as functions of the interlamellar spacing are studied in detail. It is believed that the critical bifurcating point of the solidifying interface of each lamella coincides with its marginally stable position and hence, a new scaling law is derived. Existence of the band of spacing selection is also studied. For a given solidifying rate, the critical bifurcating point of β/liquid interface is the upper limit of this band, and its lower limit corresponds to the critical bifurcating point of α/liquid interface. Our analyses interpret the latest relevant experimental data reasonably. 相似文献
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