Observation of a diverse deviation from macropore-formation theory in silicon electrochemistry

Via anodizing patterned and unpatterned samples with a high HF concentration （[HF]）, the degree of deviation from pore-formation theory was found to be markedly different. Based on the analysis of scanning electron microscope （SEM） micrographs and current-voltage （I - V） curves, the variation of physical and chemical parameters of patterned and unpatterned substrates was found to be crucial to the understanding of the observations. Our results indicate that the initial surface morphology of samples can have a considerable influence upon pore formation. The electric-field effect as well as current-burst-model was employed to interpret the underlying mechanism.     

Fast pore etching on high resistivity n-type silicon via photoelectrochemistry

In this paper, five factors, namely the HF (hydrofluoric acid) concentration, field strength, illumination intensity as well as the oxidizing-power and conductivity of electrolytes were found to strongly affect the fast pore etching. The oxidizing power of aqueous HF electrolyte of different concentrations was especially measured and analysed. A positive correlation between optimal bias and HF concentration was generally observed and the relationship was semi-quantitatively interpreted. Pore density notably increased with enhanced HF-concentration or bias even on patterned substrates where 2D (two-dimensional) nuclei were densely pre-textured. The etch rate can reach 400μm/h and the aspect ratio of pores can be readily driven up to 250.