BaCo_(0.02)~IICo_(0.04)~IIIBi_(0.94)O_3/BaSb_(0.04)Sn_(0.96)O_3复合热敏厚膜电学性能研究

采用丝网印刷工艺制备了BaCoII0.02CoIII0.04Bi0.94O3/BaSb0.04Sn0.96O3复合热敏厚膜。借助X射线衍射仪、扫描电子显微镜和阻温测试仪对复合热敏厚膜的微结构、电学性能进行了表征分析。结果表明复合热敏厚膜主相仍为钙钛矿结构的BaCoII0.02CoIII0.04Bi0.94O3和BaSb0.04Sn0.96O3,厚膜表面随BaCoII0.02CoIII0.04Bi0.94O3含量增加趋于致密均匀。复合热敏厚膜的烧结温度、室温电阻率(ρ25)、热敏常数(β25/85)和活化能(E a)随BaCoII0.02CoIII0.04Bi0.94O3含量的增加呈现下降趋势,其烧结温度、ρ25、β25/85和E a分别处于870~1000℃、2.5 kΩ·cm~2.35 MΩ·cm、2764~4030 K和0.238~0.348 eV范围内。     

稀土强韧化MoSi2材料的室温性能

通过机械合金化-冷等静压-高温烧结工艺制备了MoSi     

boldmath Characterization of the BaBiO3-doped BaTiO3 positive temperature coefficient of a resistivity ceramic using impedance spectroscopy with Tc=155℃

BaBiO₃-doped BaTiO₃ (BB-BT) ceramic, as a candidate for lead-free positive temperature coefficient of resistivity (PTCR) materials with a higher Curie temperature, has been synthesized in air by a conventional sintering technique. The temperature dependence of resistivity shows that the phase transition of the PTC thermistor ceramic occurs at the Curie temperature, T_c=155 ℃, which is higher than that of BaTiO₃ ( ≤ 130 ℃). Analysis of ac impedance data using complex impedance spectroscopy gives the alternate current (AC) resistance of the PTCR ceramic. By additional use of the complex electric modulus formalism to analyse the same data, the inhomogeneous nature of the ceramic may be unveiled. The impedance spectra reveal that the grain resistance of the BB-BT sample is slightly influenced by the increase of temperature, indicating that the increase in overall resistivity is entirely due to a grain-boundary effect. Based on the dependence of the extent to which the peaks of the imaginary part of electric modulus and impedance are matched on frequency, the conduction mechanism is also discussed for a BB-BT ceramic system.     

Characterization of the BaBiO3-doped BaTiO3 positive temperature coefficient of a resistivity ceramic using impedance spectroscopy with Tc=155℃

BaBiO 3-doped BaTiO3(BB-BT) ceramic,as a candidate for lead-free positive temperature coefficient of resistivity (PTCR) materials with a higher Curie temperature,has been synthesized in air by a conventional sintering technique. The temperature dependence of resistivity shows that the phase transition of the PTC thermistor ceramic occurs at the Curie temperature,Tc=155℃,which is higher than that of BaTiO3(≤130℃). Analysis of ac impedance data using complex impedance spectroscopy gives the alternate current (AC) resistance of the PTCR ceramic. By additional use of the complex electric modulus formalism to analyse the same data,the inhomogeneous nature of the ceramic may be unveiled. The impedance spectra reveal that the grain resistance of the BB-BT sample is slightly influenced by the increase of temperature,indicating that the increase in overall resistivity is entirely due to a grain-boundary effect. Based on the dependence of the extent to which the peaks of the imaginary part of electric modulus and impedance are matched on frequency,the conduction mechanism is also discussed for a BB-BT ceramic system.     

La2O3对Mo5Si3/MoSi2复合材料的改性研究

通过粉末冶金方法制备了Mo5Si3/MoSi2和La2O3/Mo5Si3/MoSi2复合材料,探讨了其烧结工艺.检测了其密度、维氏硬度、抗弯强度和断裂韧性,运用X射线衍射仪和扫描电镜（SEM）研究了La2O3对Mo5Si3/MoSi2复合材料显微结构和力学性能的改性影响.结果表明,La2O3/Mo5Si3/MoSi2复合材料的合理烧结温度为1600 ℃,比MoSi2材料提高了100 ℃; 稀土氧化物的加入细化了晶粒,且明显提高了材料的致密度、维氏硬度和抗弯强度; 其强化机制为细晶强化和弥散强化; 韧化机制为细晶韧化、裂纹偏转、裂纹分支和微桥接.     

添加稀土和重金属氧化物玻璃陶瓷的制备和烧结及性能研究

通过分别添加稀土氧化物和重金属氧化物作为烧结助剂 ,采用电子陶瓷工艺制备了具有非化学计量组成的堇青石基玻璃陶瓷。为了评价玻璃粉末的烧结特性 ,对烧结热处理后试样的密度和显气孔率进行了测定。结果表明 ,两种烧结助剂能促进玻璃的烧结致密化和降低 μ 堇青石向α 堇青石转变的温度并影响玻璃陶瓷的介电性能。玻璃陶瓷的完全致密化温度可以低到 90 0℃。该材料具有低的介电常数 (≈ 5 )和低的介质损耗因子 (≤ 0 2 % )以及合适的热膨胀系数 ((2 80～ 3 5 2 )× 10 - 6 ℃ - 1) ,能够在低于 95 0℃与高导电率的金属如金、铜和银 /钯共烧 ,是一种潜在的低温共烧陶瓷基板材料。     

二硅化钼自配副在干摩擦条件下的摩擦学性能研究

在 MM- 2 0 0型摩擦磨损试验机上考察了不同载荷下金属间化合物二硅化钼自配副的干摩擦磨损性能 ,采用扫描电子显微镜和微探针观察与分析了其磨损表面形貌 ,并对材料的摩擦磨损机制进行了探讨 .结果表明 :干摩擦条件下 Mo Si2 自配副在载荷为 5 0～ 10 0 N时具有较好的综合摩擦磨损性能 ,摩擦系数和磨损率分别维持在 0 .11和 6 .0×10 - 5g/ min;随着载荷的增大 ,Mo Si2 自配副的主要磨损机理从塑性变形和疲劳磨损转变为氧化磨损     

BiMnO_3改性BNT-BKT压电陶瓷的研究

为了提高BNT基压电陶瓷的电性能,采用传统的陶瓷制备方法,制备了一种Bi基的钙钛矿型无铅压电陶瓷(1-x)Bi0.5(Na0.82K0.18)0.5TiO3-xBiMnO3(简写为BNKT-BMx)。研究了Bi基铁电体BiMnO3对该体系陶瓷微观结构和压电介电性能的影响。结果表明:在所研究的组成范围内陶瓷材料均能够形成纯钙钛矿固溶体,微量BiMnO3不改变该体系陶瓷的晶体结构,但促进晶粒生长。随着BiMnO3含量增加,低温介电反常峰消失,高温介电峰出现频率分散性。随BiMnO3含量增加,压电常数d33和机电耦合系数kp先增加后降低,在x=0.01时,kp=0.333,x=0.015时,d=170pC/N,为该体系陶瓷压电性能的最优值。     

BaFe0.4Sn0.6O3/BaBiO3负温度系数复合热敏陶瓷阻抗分析

以BaBiO₃为导电相,BaFe_0.4Sn_0.6O₃为高阻相,采用固态反应法制备了不同BaBiO₃含量的BaFe_0.4Sn_0.6O₃/BaBiO₃负温度系数(NTC)热敏复合陶瓷.为获得在渗流阈值(即BaBiO₃含量为12 mol%)前后复合陶瓷的内部导电机理,对复合陶瓷进行了阻抗分析.分     

CuO/BaCo_(0.02)~ⅡCo_(0.04)~ⅢBi_(0.94)O_3共掺Ba_(0.5)Bi_(0.5)Fe_(0.9)Sn_(0.1)O_3热敏厚膜的微结构及电学性能研究

采用丝网印刷工艺制备了CuO/BaCoⅡ0.02Co Ⅲ0.04Bi0.94O3共掺Ba0.5Bi0.5Fe0.9Sn0.1O3热敏厚膜,并借助X射线衍射仪、扫描电子显微镜及交流阻抗谱对厚膜的物相、形貌和电学性能进行表征分析。CuO的存在使得厚膜中的BaCoⅡ0.02Co Ⅲ0.04Bi0.94O3出现分解行为和非钙钛矿Ba-Bi氧化物的形成,厚膜主要由大量的颗粒链组成,单个颗粒链主要由Ba0.5Bi0.5Fe0.9Sn0.1O3构成的小晶粒和低熔点的BaCoⅡ0.02Co Ⅲ0.04Bi0.94O3大晶粒组成。当厚膜中CuO含量添加至10%时,可获得最低的室温电阻率;300 h 150℃下,CuO含量为4%的厚膜老化率约为2.3%。厚膜的电学性能主要来自于晶界的贡献,较低温区内晶界表现为氧空位电导,较高温区下为电子与氧空位耦合电导。