速度和载荷对脂润滑2Cr13钢离子渗氮层摩擦学行为的影响

利用销-盘式摩擦磨损试验机对不同速度和载荷条件下 PFPE脂润滑2Cr13钢离子渗氮层进行了系统的真空滑动摩擦磨损试验.采用扫描电子显微镜(SEM)、X射线光电子能谱仪(XPS)和傅里叶变换红外光谱(FTIR)分别对磨损表面的形貌、化学状态及润滑脂的成分进行分析.结果表明:随着载荷和滑动速度的增加,脂润滑渗氮层的磨损机制由轻微磨损向轻微复合磨损机制转变.在真空摩擦磨损过程中2Cr13钢离子渗氮层与PFPE润滑脂发生化学反应,并有FeF3生成,促进PFPE润滑脂发生降解,形成酸性的氟化物.增加载荷和速度会加速渗氮层与润滑脂之间的反应,进一步促进润滑脂的降解.     

质子辐照ZnO白漆光学退化的慢正电子湮没分析

 采用慢正电子湮没光谱研究低能质子辐照下ZnO白漆的光学退化。研究结果表明，随质子辐照注量的增加， 多普勒展宽谱的S参数逐渐减小，W参数逐渐增大。质子辐照下S-W参数拟合曲线的斜率发生改变。S参数的减小可以归结为锌空位含量的减少以及准正电子素的形成。准正电子素{单电离氧空位（捕获一个电子）+正电子}的形成，能够降低正电子湮没的速率，导致S参数减小。S参数的减小证实了质子辐照导致ZnO白漆中单电离氧空位数量的增加。S-W参数拟合曲线斜率的变化可以归结于质子辐照下双电离氧空位向单电离氧空位的转变。     

石英玻璃低能质子辐照损伤动力学研究

地面模拟研究了JGS3光学石英玻璃在真空、热沉和能量低于200keV的低能质子辐照下表面光学性能变化的基本规律．并建立了辐照损伤色心演化的动力学唯象模型。试验结果表明．大通量低能质子辐照对石英玻璃表层具有明显的表面损伤效应。随着辐照吸收剂量的增加，光密度变化先以线性规律迅速增加．加进一步增加时逐渐呈现饱和趋势；采用较高能量辐照作用后光密度变化出现饱和趋势的拐点提前，且饱和数值降低。根据对试验结果的分析，建立了低能质子辐照下石英玻璃色心演化的动力学模型．并给出了光密度变化的表达式。采用模型结果进行数学模拟，模拟曲线与试验结果曲线相似。因此所建立的动力学模型可以用来定量描述低能质子辐照下石英玻璃光学性能随辐照吸收剂量的变化规律。     

keV 质子辐照对Kapton/Al光学性能的影响

 采用空间综合辐照设备对Kapton/Al薄膜进行了质子辐照地面模拟试验，选取质子能量90 keV,辐照通量5.0×10¹¹ cm¹²·s^-1。通过辐照前后光谱反射系数的变化考察了实验样品的光学性能退化特征。借助于反射光谱和紫外-可见吸收光谱和傅里叶转换红外光谱分析技术分析了辐照后Kapton/Al光学性能的退化机理。研究结果表明：辐照过程中样品表面发生了复杂的化学反应，随着辐照剂量的增加光能隙逐渐减小，Kapton吸收曲线的末端边缘发生红移并且在可见光区吸收强度增加。     

纳米Ni在77 K温度下压缩行为的研究

利用低温力学测试系统研究了电化学沉积纳米Ni在77 K温度下的压缩行为. 室温下纳米Ni 的屈服强度为 2.0 GPa, 77 K温度下的屈服强度为3.0 GPa, 压缩变形量则由室温的10%左右下降到5%. 借助应变速率敏感指数、激活体积、扫描电子显微和高分辨透射电子显微分析, 对纳米Ni的塑性变形机制进行了表征. 研究表明, 在77 K温度下的塑性变形主要是由晶界-位错协调变形主导, 晶界本征位错弓出后无阻碍地在晶粒内无位错区运动, 直至在相对晶界发生类似切割林位错行为. 同时分析了弓出位错的残留位错部分在协调塑性变形时起到的增加应变相容性和减小应力集中的作用. 利用晶界-位错协调机制和残留位错运动与温度及缺陷的相关性揭示了纳米Ni室温和77 K温度压缩性能差异的内在原因. 关键词： 塑性变形 强度 位错     

Effect of bias condition on heavy ion radiation in bipolar junction transistors

The characteristic degradations in a silicon NPN bipolar junction transistor(BJT) of 3DG142 type are examined under irradiation with 40-MeV chlorine(Cl) ions under forward,grounded,and reverse bias conditions,respectively.Different electrical parameters are in-situ measured during the exposure under each bias condition.From the experimental data,a larger variation of base current(I B) is observed after irradiation at a given value of base-emitter voltage(V BE),while the collector current is slightly affected by irradiation at a given V BE.The gain degradation is affected mostly by the behaviour of the base current.From the experimental data,the variation of current gain in the case of forward bias is much smaller than that in the other conditions.Moreover,for 3DG142 BJT,the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence,while at high fluence,the gain degradation in the reverse bias case becomes smaller than that in the grounded case.     

Effect of nano-SiO2 films on the electron radiation induced conductivity of polyimide

The radiation induced conductivity (RIC) behaviors in nano-SiO2 deposited polyimide (PI) were investigated using the in situ measurement technique. The results indicate that, by comparison with the case of virgin polyimide, the RIC in nano-SiO2/polyimide shows low steady state values. Moreover, the steady state RIC is a power function of the dose rate with a power index of 0.659, lower than that of 0.76 in the virgin polyimide. The interfacial barrier and trapping effects are the main reasons for the change. Meanwhile, both of the interfacial effects also result in a unipolar carrier transportation mechanism in nano-SiO2 deposited PI from the dipolar one in the virgin PI. The mechanisms of the RIC behaviors are discussed in the paper.     

Radiation effects on MOS and bipolar devices by 8 MeV protons,60 MeV Br ions and 1 MeV electrons

The radiation effects of the metal-oxide-semiconductor(MOS) and the bipolar devices are characterised using 8 MeV protons,60 MeV Br ions and 1 MeV electrons.Key parameters are measured in-situ and compared for the devices.The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code.The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contributions to MOS and bipolar devices.The irradiation particles,which cause a larger displacement dose within the same chip depth of bipolar devices at a given total dose,would generate more severe damage to the voltage parameters of the bipolar devices.On the contrary,the irradiation particles,which cause larger ionising damage in the gate oxide,would generate more severe damage to MOS devices.In this investigation,we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.     

低能质子辐照对ZnO白漆光学性能退化的影响

 通过光致荧光光谱解谱和X射线光电子能谱（XPS）分析，研究了ZnO白漆经受能量低于200 keV低能质子辐照过程中氧空位缺陷的形成与演化过程。XPS解析表明质子辐照后晶格氧减少，光致荧光光谱解析表明锌空位减少，说明ZnO白漆中氧空位数量增加，且双电离氧空位能够捕获价带中的电子转变为单电离氧空位，使单电离氧空位逐渐成为辐照产生的主要缺陷。质子辐照使ZnO白漆中氧空位数量增加，而氧空位易捕获电子形成色心，从而导致光学性能下降。     

真空紫外辐照对MQ增强硅橡胶热性能及光学性能的影响

 采用空间综合辐照模拟设备研究了真空紫外辐照对MQ增强加成型硅橡胶的表面形貌、质量损失、热性能及光学性能的影响。试验结果表明：真空紫外辐照后，硅橡胶表面出现损伤裂纹，随辐照剂量的增加，裂纹的数量增多；真空紫外辐照后，硅橡胶的质量有所损失，其质损率随辐照剂量的增加而增加；真空紫外辐照后硅橡胶的耐热性随辐照剂量的增加先增加而后下降；真空紫外辐照对硅橡胶材料的体膨胀/收缩变形影响不大，但对材料的光学性能有较大影响，随着辐照剂量的增加，材料的光学透过率下降。