利用菌紫质薄膜进行角度复用和偏振复用全息存储实验研究

全息光存储以其高密度、大容量、高速并行数据存取而成为光存储领域的一个重要研究方向。生物光致变色材料———菌紫质是一种新型可擦重写全息记录介质。实验证明了使用菌紫质薄膜进行角度复用和偏振复用全息存储的可行性。利用菌紫质的光致变色特性,采用90°角度复用全息存储光路,在BR-D96N薄膜样品同一位置上实现了6幅全息图存储,并分别读出了无串扰的再现像。利用菌紫质薄膜的光致各向异性进行了偏振复用全息存储,在BR-D96N薄膜样品的同一位置上存储了两幅正交偏振光记录的图像,用原参考光再现和偏振片选择,可分别读出这两幅图像。     

纳米晶型MnCo2O4的微波加热法制备及其电催化性能

以Co和Mn的醋酸盐为原料,采用共沉淀法制得草酸盐前驱物,加入一定量微波吸波剂乙炔黑后,用微波进行热处理制得复合氧化物MnCo2O4.X射线衍射和扫描电镜结果表明,产物为纳米晶型,结晶良好,纯度较高,粒径为10~20nm且分布均匀.在室温下、空气气氛中,以6mol/L的KOH溶液为电解液测试了由MnCo2O4制备的空气扩散电极对氧还原反应的催化效果.极化曲线显示,在-0.2V(vsHg/HgO)电位下,氧还原反应电流密度达96mA/cm2.为显示微波加热法的优越性,用马弗炉煅烧制备了MnCo2O4,并对两种热处理方法所得产物的物化性能进行了比较.     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

菌紫质高密度偏振全息光数据存储实验研究

实验研究了基因改性菌紫质BR_D96N薄膜在不同偏振光记录下的全息存储特性，比较了不同 偏振态记录光和读出光对衍射像光强及信噪比的影响. 实验结果表明，与其他偏振全息记录 相比，正交圆偏振光记录可实现衍射光偏振状态与散射噪声偏振状态的分离，得到高信噪比 的衍射像，同时还具有高的衍射效率. 以 He_Ne 激光器（633nm，3mW）为记录和读出光源 ，用空间光调制器作为数据输入元件，CCD作为数据读出器件，采用傅里叶变换全息记录的 方法，在 BR_D96N 薄膜样品60μm×42μm的面积上进行了正交圆偏振全息数据存储，达到 了2×10⁸bit/cm²的存储面密度，并实现了编码数据的无误读出与 还原. 关键词： 菌紫质 偏振全息 光致变色 光致各向异性 高密度光存储     

辅助紫光提高菌紫质全息衍射效率的实验和理论研究

由于菌紫质样品的饱和吸收特性，在全息记录中，当记录光强大于样品的饱和光强时，全息光栅透过率随记录光相位差的分布远离余弦型，因此衍射效率的稳定值很低.菌紫质样品在红光和紫光共同作用下存在着双光束互补抑制效应，紫光可以抑制红光的透过率，提高红光的饱和光强，使记录区域由非线性区移至线性区，从而使全息光栅透过率随记录光相位差的分布变为余弦型，可以有效地提高全息衍射效率.实验证明，辅助紫光大大提高了菌紫质样品全息衍射效率的稳定值.根据此原理，建立了三光束全息光存储系统，在红光记录全息图的同时加入辅助紫光，可以使全息图衍射效率及衍射像的像质得到提高. 关键词： 菌紫质 全息存储 衍射效率 饱和吸收     

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6×1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp 2 Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.     

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AIInGaN superlattice electron blocking layer

InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concen- tration, radiative recombination rate, electron leakage, internal quantum efficiency （IQE）, current-voltage （l-V） perfor- mance curve, light output-current （L-l） characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AIInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AIlnGaN SL EBL is used.     

Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.     

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

The performance of a multiple quantum well （MQW） InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density （Jsc） and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.     

Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes （LEDs）. The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.