Enhanced spin–orbit torque efficiency in Pt100−xNix alloy based magnetic bilayer

The binary alloy/ferromagnetic metal heterostructure has drawn extensive attention in the research field of spin–orbittorque(SOT)due to the potential enhancement of SOT efficiency via composition engineering.In this work,the magneticproperties and SOT efficiency in the Pt100?xNix/Ni78Fe22 bilayers were investigated via the spin-torque ferromagneticresonance(ST-FMR)technique.The effective magnetic anisotropy field and effective damping constant extracted by analyzing the ST-FMR spectra show a weak dependence on the Ni concentration.The effective spin-mixing conductanceof 8.40×10¹⁴??1·m?2and the interfacial spin transparency Tin of 0.59 were obtained for the sample of Pt70Ni30/NiFebilayer.More interestingly,the SOT efficiency that is carefully extracted from the angular dependence of ST-FMR spectrashows a nonmonotonic dependence on the Ni concentration,which reaches the maximum at x=18.The enhancement ofthe SOT efficiency by alloying the Ni with Pt shows potential in lowering the critical switching current.Moreover,alloyingrelatively cheaper Ni with Pt may promote to reduce the cost of SOT devices.     

血液可见吸收光谱与血氧参数神经网络估算法

总血红蛋白浓度和血氧饱和度是两个基本的血氧参数。文章提出了利用内置双光纤微创探头在位测量大鼠脑组织血氧参数的新方法。首先,利用悬乳液(Intralipid)和全血配置不同总血红蛋白浓度的混合溶液,模拟生物组织模型,用光纤光谱仪测试系统测量组织模型在加氧和去氧时的实时吸收光谱,同时用血氧分析仪(OXI meter)对血氧参数定标,建立测试光谱和定标数据样本集。然后,利用人工神经网络建立血液吸收光谱与血氧参数的神经网络模型,训练后的网络模型能根据吸收光谱输出生物组织的血氧参数值,总血红蛋白浓度和血氧饱和度的平均输出误差分别为±4μmol·L-1和±5%。最后,利用神经网络模型对大鼠脑组织血氧参数进行了在位测试实验,测得脑灰质的血氧饱和度为0.60~0.70,脑白质血氧饱和度为0.45~0.55;总血红蛋白浓度在脑皮层(深度1mm)附近最高,平均110μmol·L-1,其余深度脑组织的总血红蛋白浓度为70~90μmol·L-1。这种方法对脑外科微创手术中实时在位测试脑组织血氧参数具有重要的参考意义。     

不同表面官能团和化学组成共聚物微球的表面生物矿化研究

采用具有不同共聚物组成和端基官能团的聚己内酯-b-聚乙二醇共聚物(PCL-b-PEG),通过双乳液溶剂挥发法制备了一系列具有不同表面性质的生物降解高分子微球.采用生物模拟矿化的方法以磷灰石修饰微球表面.进一步通过扫描电镜、热重分析仪、X-射线衍射仪和光电子能谱仪对微球表面磷灰石的形貌、含量、结构和组成进行了分析.研究了微球表面亲水性、粗糙度、官能团以及矿化时间对于磷灰石形成的影响.最终实验结果表明,随着共聚物中PEG含量增加,微球表面粗糙度和亲水性增加,因此微球表面磷灰石含量增加.同时微球表面官能团以及矿化时间的不同也会对磷灰石的形成和分布产生明显影响.     

端氨基聚乙二醇-聚已内酯二嵌段共聚物的合成及其微球表面氨基和形态的调控

生物降解高分子作为一种重要的生物材料已经发展到第3代[1],实际应用的复杂性不仅要求高分子材料本身具有合适的降解性能、热性能、力学性能和加工性能等,而且还要求高分子材料具有能够刺激细胞生长、识别特定细胞等生物活性特征.高分子材料的这些生物活性主要是通过高分子材料     

Magnetic two-dimensional van der Waals materials forspintronic devices

Magnetic two-dimensional (2D) van der Waals (vdWs) materials and their heterostructures attract increasing attention in the spintronics community due to their various degrees of freedom such as spin, charge, and energy valley, which may stimulate potential applications in the field of low-power and high-speed spintronic devices in the future. This review begins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and stress. Next, the proximity-effect, current-induced magnetization switching, and the related spintronic devices (such as magnetic tunnel junctions and spin valves) based on magnetic 2D vdWs materials are presented. Finally, the development trend of magnetic 2D vdWs materials is discussed. This review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials.     

薄膜异质结中磁性斯格明子的相关研究

磁性斯格明子由于具有拓扑保护、尺寸小、驱动电流密度低等优异的属性,有望作为未来超高密度磁存储和逻辑功能器件的信息载体.为了满足器件中信息写入和读取的基本要求,需要在室温下实现斯格明子的精确产生、操控和探测.该综述简要介绍最近我们针对上述问题取得的一系列研究进展,包括:1)证明可以通过控制磁性薄膜材料的垂直磁各向异性在室温下产生斯格明子,并进一步在基于反铁磁的薄膜异质结中发现了室温、零磁场下稳定存在的斯格明子;2)证明能够利用电流产生的自旋轨道力矩操控斯格明子,并进一步制备出一种基于斯格明子的原理型器件,实现了利用电学方式产生和操控数量可控的斯格明子.     

From microelectronics to spintronics and magnonics

In this review, the recent developments in microelectronics, spintronics, and magnonics have been summarized and compared. Firstly, the history of the spintronics has been briefly reviewed. Moreover, the recent development of magnonics such as magnon-mediated current drag effect (MCDE), magnon valve effect (MVE), magnon junction effect (MJE), magnon blocking effect (MBE), magnon-mediated nonlocal spin Hall magnetoresistance (MNSMR), magnon-transfer torque (MTT) effect, and magnon resonant tunneling (MRT) effect, magnon skin effect (MSE), etc., existing in magnon junctions or magnon heterojunctions, have been summarized and their potential applications in memory and logic devices, etc., are prospected, from which we can see a promising future for spintronics and magnonics beyond micro-electronics.     

电流焦耳热调控反转型垂直(Co/Pt)n/Co/IrMn纳米多层膜结构的交换偏置效应研究

交换偏置效应影响磁敏传感器中的关键性能参数.在外加磁场辅助下,本文提出一种电流产生的焦耳热调控交换偏置效应的研究方法.通过该方法,系统调控了反转型垂直纳米多层膜结构(Co/Pt)_n/Co/IrMn(简称垂直多层膜结构,n+1是Co层周期数)的面内交换偏置效应,不仅连续改变了交换偏置场H_eb大小,而且实现了H_eb的翻转.在垂直多层膜结构中,如果固定外加磁场H_p(脉冲电流I_DC)后连续改变I_DC(H_p)的大小可以连续调控H_eb的数值;如果固定H_p(I_DC)后同时改变I_DC(H_p)的大小和方向,则在较大I_DC时可实现H_eb的翻转.结果表明,该方法可以用来原位调控磁敏传感器的线性磁场范围和灵敏度等关键性能参数,对磁敏传感器的优化研究具有重要的借鉴意义.     

Giant Tunneling Magnetoresistance in Spin-Filter Magnetic Tunnel Junctions Based on van der Waals A-Type Antiferromagnet CrSBr

Two-dimensional van der Waals magnetic materials have demonstrated great potential for new-generation high-performance and versatile spintronic devices. Among them, magnetic tunnel junctions(MTJs) based on A-type antiferromagnets, such as CrI₃, possess record-high tunneling magnetoresistance(TMR) because of the spin filter effect of each insulating unit ferromagnetic layer. However, the relatively low working temperature and the instability of the chromium halides hinder applications ...