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1.
光学实验室网络教学平台的设计   总被引:1,自引:0,他引:1  
传统的多媒体课件正在受到网络使用环境挑战,取而代之将是基于网而设计的多媒体教学平台。利用FIASH、Cult3D等技术开发的基于网络环境的虚拟实验室案的提出将为大学物理实验开辟一个崭新的多媒体教学方案。  相似文献
2.
PbMoO4原位高压拉曼光谱和电导率的研究   总被引:1,自引:0,他引:1       下载免费PDF全文
 钼酸铅(PbMoO4)具有高的声光品质因数、低的声损耗、良好的声阻抗匹配等性质,被广泛应用于声光偏转器、调制器、可调滤光器、声表面波器件等各类声光器件,其优异的低温闪烁性能亦引起人们的注意,具有在核设备方面的应用潜力。为探讨其晶体结构和物理性质,在金刚石对顶砧上原位测量了PbMoO4的拉曼光谱,并测量了其在几个不同压力点下电导率随温度的变化。实验发现,压力在12.5 GPa时,拉曼峰完全消失,说明压力在10.8~12.5 GPa之间PbMoO4样品出现了非晶态转变。当从26.5 GPa卸压到9.4 GPa时,PbMoO4的拉曼谱在低波数出现无序化,而在2.4 GPa压力下858 cm-1峰又重新出现,说明样品结构由无序向晶化回复。压力在10.8 GPa以上时,电导率随着温度的增加而显著增加,且随着压力的增加也明显增加。  相似文献
3.
密度泛函理论对PbnS(n=1-13)团簇结构和电子性质的研究   总被引:1,自引:1,他引:0  
利用密度泛函理论中的广义梯度近似(GGA)对PbnS(n=1-13)团簇进行几何结构优化,并对能量和频率进行计算,得到了PbnS(n=1-13)团簇的基态结构和稳定结构。计算结果表明:PbnS团簇的平均结合能比Pbn团簇的平均结合能要大,且n=4和10为PbnS团簇的幻数。在PbnS团簇中,电荷都是从Pb原子向S原子转移且以共价键和离子键共存。  相似文献
4.
Electrical properties of stoichiometric iron sulfide (FeS) are investigated under high pressure with a designed diamond anvil cell. The process of phase transition is reflected by changing the electrical conductivity under high pressure, and the conductivity of FeS with the NiAs structure is found to be much smaller than other phases. Two new phase transitions without structural change are observed at 34.7 GPa and 61.3 GPa. The temperature dependence of the conductivity is found to be similar to that of a semiconductor when the pressure is higher than 35 GPa  相似文献
5.
In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33 GPa. The abnormal resistivity changes at about 3.8 GPa and 10 GPa are caused by the structural phase transitions to the rock-salt phase and to the Cmcm phase, respectively. The other abnormal resistivity changes at about 6.5 GPa, 15.5 GPa, 22.2 GPa and about 30 GPa never observed before are due to the electronic phase transitions of CdTe. The origin of the abnormal change occurred at about 6.5 GPa is discussed. The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3 GPa.  相似文献
6.
In-situ high pressure Raman spectra and electrical conductivity measurements of scheelite-structure compound PbMoO4 are presented. The Raman spectrum of PbMoO4 is determined up to 26.5 GPa on a powdered sample in a diamond anvil cell (DAC) under nonhydrostatic conditions. The PbMoO4 gradully experiences the trans- formation from the crystal to amorphous between 9.2 and 12.5 GPa. The crystal to amorphous transition may be due to the mechanical deformation and the crystalographic transformation. Furthermore, the electrical conductivity of PbMoO4 is in situ measured accurately using a microcircuit fabricated on a DAC based on the van der Pauw method. The results show that the electrical conductivity of PbMoO4 increases with increases of pressure and temperature. At 26.5 GPa, the electrical conductivity value of PbMoO4 at 295K is 1.93 - 10-4 S/cm, while it raises by one order of magnitude at 430K and reached 3.33 - 10-3 S/cm. However, at 430K, compared with the electrical conductivity value of PbMoO4 at 26.5 GPa, it drops by about two order magnitude at 7.4 GPa and achieves 2.81 × 10^-5 S/cm. This indicates that the effect of pressure on the electrical conductivity of PbMoO4 is more obvious than that of temperature.  相似文献
7.
We perform the in-situ conductivity measurement on BaF2 at high pressure using a microcircuit fabricated on a diamond anvil cell. The results show that BaF2 initially exhibits the electrical property of an insulator at pressure below 25 GPa, it transforms to a wide energy gap semiconductor at pressure from 25 to 30 GPa, and the conductivity increases gradually with increasing pressure from 30 GPa. However, the metallization predicted by theoretical calculation at 30-33 GPa cannot be observed. In addition, we measure the temperature dependence of the conductivity at several pressures and obtain the relationship between the energy gap and pressure. Based on the experimental data, it is predicted that BaF2 would transform to a metal at about 87 GPa and ambient temperature. The conductivity of BaF2 reaches the order of 10^-3Ω^-1 cm^-1 at 37 GPa and 2400 K, the superionic conduction is not observed during the experiments, indicating the application of pressure elevates greatly the transition temperature of the superionic conduction.  相似文献
8.
Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressures. The result shows that HgSe has a pressure-induced transition sequence from a semimetal to a semiconductor to a metal, similar to that in HgTe. Several discontinuous changes in conductivity are observed at around 1.5, 17, 29 and 49GPa, corresponding to the phase transitions from zinc-blende to cinnabar to rocksalt to orthorhombic to an unknown structure, respectively. In comparison with HgTe, it is speculated that the unknown structure may be a distorted CsCl structure. For the cinnabar-HgSe, the energy gap as a function of pressure is obtained according to the temperature dependence of conductivity. The plot of the temperature dependence of conductivity indicates that the unknown structure of HgSe has an electrical property of a conductor.  相似文献
9.
利用密度泛函理论广义梯度近似方法得到了BnTi(n=1-12)团簇的基态结构, 并讨论了电子性质和磁性质. 结果表明, n≤5 时, BnTi 基态结构呈平面或准平面, n>5 时, Ti 原子倾向于与较多的B 原子成键而呈三维结构. 由二阶能量差分得出B3Ti, B5Ti, B10Ti 为幻数团簇. Mulliken 布居分析显示BnTi 团簇中电荷由Ti 原子向近邻B 原子转移且以共价键与离子键共存; 除BTi 磁矩为5 μB 外, 其余团簇磁矩处于0-2 μB 之间; 团簇总磁矩主要由Ti 原子的3d 轨道和个别B 原子提供. B3Ti和B7Ti 团簇中, B 原子表现为反铁磁性.  相似文献
10.
利用密度泛函理论系统地研究了YmSi@Al12 (m=1—3)团簇及其贮氢性质. 结果表明, 在所研究的尺度范围内, 钇原子未在Si@Al12团簇上团聚; 每个钇原子按18电子规则吸附氢分子, 其中Y3Si@Al12团簇可以吸附16个完整氢分子, 贮氢质量分数为5.0 %, 平均吸附能处于0.324—0.527 eV之间, 较为理想的吸附能说明在室温条件下吸氢和脱氢是可行的.  相似文献
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