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1.
We report a 1.8 μm two-section distributed Bragg reflector laser using butt-jointed In Ga As P bulk material as the waveguide core layer. The threshold current is 17 m A and the output power is 8 m W on average. The threshold current, output power, and emitting wavelength dependences on temperature are measured. The obtained wavelength tuning range is 10 nm. This device has potential applications in simultaneous multiple-gas detection.  相似文献   
2.
InGaAs/GaAsP strain-compensated multiple quantum wells (SCMQWs) and strained InGaAs/GaAsmultiple quantum wells (MQWs) were grown on GaAs substrates by metal organic vapor phase epitaxy(MOVPE). The results of double crystal X-ray diffraction (DCXRD) revealed that strain relief had beenpartly accommodated by the misfit dislocation formation in the strained MQW material. It led to thatthe full width half maximums (FWHMs) of superlattice satellite peaks are broader than those of SCMQWstructures, and there was no detectable room temperature photoluminecence(RT-PL)for the strained  相似文献   
3.
采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术,得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱,加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA),输出功率高(100mA时大于14mW).从10—40℃,1.74μm激光器的特征温度T0=57K,和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词: MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器  相似文献   
4.
梁松  朱洪亮  潘教青  王圩 《中国物理》2006,15(5):1114-1119
Self-assembled lnAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatoinic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.  相似文献   
5.
设计并制备了具有单边大光腔结构的半导体电吸收(electroabsorption,EA)调制器.模拟和测试的结果均表明:单边大光腔结构能有效地改善EA调制器的光场分布,使椭圆形的近场光斑变得圆形化,从而达到与圆形模式光纤之间的匹配,有利于提高耦合效率.  相似文献   
6.
In the last two decades, m-v compound semi- conductor materials grown on elemental semiconduc- tor substrates have attracted much attention due to their potential applications in high-efficiency so- lar cells, photodetectors, quantum-dot (QD) lasers, and metal-oxide-semiconductor field-effect transistors (MOSFETs). Due to their extremely high electron mobility, III-V semiconductors such as GaAs, InGaAs and InAs are believed to be chan- nel materials for future complementary metal-oxide- semiconductor (CMOS) technology.CMOS tran- sistors on Ge substrates with high mobility In- GaAs/Ge channels have already been fabricated by using a wafer bonding technique, which is a promis- ing step for such a device on Si.  相似文献   
7.
We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.  相似文献   
8.
利用可调谐二极管激光吸收光谱技术检测气体浓度时,为了从红外传感信号中提取一次及二次谐波信号来表征气体浓度,研发了一种基于数字信号处理器的数字正交锁相放大器.介绍正交锁相放大原理,设计谐波提取算法,给出数字正交锁相放大器的软硬件实现方案.利用配备的浓度为1%~5%的甲烷样品以及研制的锁相放大器,开展气体实验.实验结果显示,当甲烷浓度为5%时,在二次谐波对应的频率点处,测得的系统信噪比为34dB,表明设计的锁相放大器具有较好的性能;测得的二次与一次谐波信号峰峰值的比值与气体浓度成线性关系;考虑动态配气以及气体沿管道传输的时间,检测系统的响应时间约为96~98s;气体浓度为20 000ppm时,测试浓度波动范围为-92ppm~+118ppm;根据Allan方差预测的系统检测下限为29.52ppm.与模拟锁相放大器以及商用锁相放大器相比,本文研制的数字正交锁相放大器硬件结构简单、体积小、成本低、易于集成,在红外气体检测领域具有很好的应用前景.  相似文献   
9.
We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selectivearea-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the Q WI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of-5 V.  相似文献   
10.
A new compact three-port InP based PD/EAM (photo-detector/electro-absorption modulator) integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20nm at 2.5 Gbit/s with a low input optical power of about 20mW.  相似文献   
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