金刚石衬底上GaN HEMT沟道温度建模:各向异性且非均匀热导率的影响

为了改善GaN HEMT的自热效应,集成高热导率的金刚石衬底有助于增强器件有源区的热量耗散。然而,化学气相淀积(CVD)生长的多晶金刚石(PCD)具有柱状晶粒结构,导致了各向异性的材料热导率,且其热导率值与生长厚度有关。为此,通过建模金刚石生长过程中晶粒尺寸的演变过程,计算了金刚石沿面内和截面方向的热导率。基于该PCD热导率模型,利用计入材料非线性热导率的GaN器件热阻解析模型,计算得到了GaN HEMT沟道温度的波动范围,并分析了其与器件结构(栅长、栅宽、栅间距、衬底厚度)和功耗的依赖关系。最后,通过与有限元(FEM)仿真结果对比,分区域提取了GaN HEMT器件中PCD衬底的有效热导率,分别为260~310 W/(m·K)和1 250~1 450 W/(m·K)。本文的计算为预测金刚石衬底上GaN HEMT器件的沟道温度提供了快速、有效的方法。     

无穷多目标优化的Geoffrion真有效性及其在鲁棒优化中的应用

在多目标优化中,Pareto有效性体现了目标之间的妥协与补偿,而Geoffrion真有效性能保证补偿是有界的.本文对有无穷多个目标的优化问题引入了真有效性,完整保留了Geoffrion的结构.基于一族锥,揭示了Geoffrion真有效性的特点及其与Pareto有效性的区别.并将Geoffrion真有效性的思想用于鲁棒优化,得到了著名的Hurwicz决策准则.     

高雷诺数壁湍流的研究进展及挑战

高雷诺数壁湍流(high Reynolds number wall-bounded turbulence,HRNWT)是目前湍流科学研究的一个热点也是一个难点,对其现象、规律及机制的认知不足,理论体系远未建立而且研究手段受到各种限制.本文基于对HRNWT主要研究手段的介绍,针对HRNWT中的湍流统计量、超大尺度结构(very large scale motions,VLSMs)的尺度和形态以及起源和影响及其与颗粒的相互作用,总结了HRNWT的研究现状和最新进展,特别梳理了近年来本文作者团队在HRNWT特别是高雷诺数颗粒两相壁湍流方面的研究成果,并对HRNWT的进一步研究给出了建议及展望.      

Salt effect on molecular orientation at air/liquid methanol interface

The salt effects on molecular orientation at air/liquid methanol interface were investigated by the polarization-dependent sum frequency generation vibrational spectroscopy(SFG-VS). We clarified that the average tilting angle of the methyl group to be u = 308 58 at the air/pure methanol surface assuming a d-function orientational distribution. Upon the addition of 3 mol/L Na I, the methyl group tilts further away from the surface normal with a new u = 418 38. This orientational change does not explain the enhancement of the SFG-VS intensities when adding Na I, implying the number density of the methanol molecules with a net polar ordering in the surface region also changed with the Na I concentrations. These spectroscopic findings shed new light on the salt effects on the surfaces structures of the polar organic solutions. It was also shown that the accurate determination of the bulk refractive indices and Raman depolarization ratios for different salt concentrations is crucial to quantitatively interpret the SFG-VS data.     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz

Ultra-thin barrier (UTB) 4-nm-AlGaN/GaN normally-off high electron mobility transistors (HEMTs) having a high current gain cut-off frequency (f_T) are demonstrated by the stress-engineered compressive SiN trench technology. The compressive in-situ SiN guarantees the UTB-AlGaN/GaN heterostructure can operate a high electron density of 1.27×10¹³cm^-2, a high uniform sheet resistance of 312.8 Ω /□, but a negative threshold for the short-gate devices fabricated on it. With the lateral stress-engineering by full removing in-situ SiN in the 600-nm SiN trench, the short-gated (70 nm) devices obtain a threshold of 0.2 V, achieving the devices operating at enhancement-mode (E-mode). Meanwhile, the novel device also can operate a large current of 610 mA/mm and a high transconductance of 394 mS/mm for the E-mode devices. Most of all, a high f_T/f_max of 128 GHz/255 GHz is obtained, which is the highest value among the reported E-mode AlGaN/GaN HEMTs. Besides, being together with the 211 GHz/346 GHz of f_T/f_max for the D-mode HEMTs fabricated on the same materials, this design of E/D-mode with the realization of f_max over 200 GHz in this work is the first one that can be used in Q-band mixed-signal application with further optimization. And the minimized processing difference between the E- and D-mode designs the addition of the SiN trench, will promise an enormous competitive advantage in the fabricating costs.     

用指数型整函数的最佳限制逼近

我们研究了由仅有实零点的代数多项式导出的微分算子确定的广义Sobolev类利用指数型整函数作为逼近工具的最佳限制逼近问题.利用Fourier变换和周期化等方法,得到在L_2(R)范数下的广义Sobolev光滑函数类的相对平均宽度和最佳限制逼近的精确常数,以及当0是这个代数多项式的一个至多2重的零点时,得到最佳限制逼近在L_1(R)范数和一致范数下的广义Sobolev类的精确到阶的结果.     

ON THE GENERALIZED FRITZ JOHN OPTIMALITY CONDITIONS OF VECTOR OPTIMIZATION WITH SET-VALUED MAPS UNDER BENSON PROPER EFFICIENCY

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H2S splitting on Cu(110): Insight from combined periodic density functional theory calculations and microkinetic simulation

Practical copper (Cu)‐based catalysts for the water–gas shift (WGS) reaction was long believed to expose a large proportion of Cu(110) planes. In this work, as an important first step toward addressing sulfur poisoning of these catalysts, the detailed mechanism for the splitting of hydrogen sulfide (H₂S) on the open Cu(110) facet has been investigated in the framework of periodic, self‐consistent density functional theory (DFT‐GGA). The microkinetic model based on the first‐principles calculations has also been developed to quantitatively evaluate the two considered decomposition routes for yielding surface atomic sulfur (S*): (1) H₂S → H₂S* → SH* → S* and (2) 2H₂S → 2H₂S* → 2SH* → S* + H₂S* → S* + H₂S. The first pathway proceeding through unimolecular SH* dissociation was identified to be feasible, whereas the second pathway involving bimolecular SH* disproportionation made no contribution to S* formation. The molecular adsorption of H₂S is the slowest elementary step of its full decomposition, being related with the large entropy term of the gas‐phase reactant under realistic reaction conditions. A comparison of thermodynamic and kinetic reactivity between the substrate and the close‐packed Cu(111) surface further shows that a loosely packed facet can promote the S* formation from H₂S on Cu, thus revealing that the reaction process is structure sensitive. The present DFT and microkinetic modeling results provide a reasonably complete picture for the chemistry of H₂S on the Cu(110) surface, which is a necessary basis for the design of new sulfur‐tolerant WGS catalysts. © 2013 Wiley Periodicals, Inc.     

Multiple scattering and modeling of laser in fog

When a laser is transmitted in fog, and the water droplets will scatter and absorb the laser, which affects the intensity of the laser transmission and the accuracy of radar detection. Therefore, it is of great significance to study the laser transmission in the fog. At present, the main method of calculating the scattering and attenuation characteristics of fog is based on the radiation transmission theory, which is realized by a large number of numerical calculations or physical simulation methods, which takes time and cannot meet the requirements for obtaining the fast and accurate results. Therefore, in this paper established are a new laser forward attenuation model and backward attenuation model in low visibility fog. It is found that in low visibility environments, the results calculated by the Monte Carlo method are more accurate than those from most of the existing forward attenuation models. For the cases of 0.86-μm, 1.06-μm, 1.315-μm, 10.6-μm typical lasers incident on different fogs with different visibilities, a backscatter model is established, the error between the fitting result and the calculation result is analyzed, the backward attenuation fitting parameters of the new model are tested, and a more accurate fitting result is obtained.