Quantum Key Distribution with Untrusted Detectors Accessible to an Eavesdropper

JETP Letters - A simple fundamental modification of quantum key distribution protocols has been proposed: it is not required to protect the results of avalanche detectors from an eavesdropper, but...     

Equilibrium Chiral Edge Currents of the Landau Spin Sublevels

Journal of Experimental and Theoretical Physics - Equilibrium edge currents emerging due to the variation of occupation of individual Landau spin sublevels near the sample edge are calculated for...     

Crystal Structure of Synthetic High-Chromium Analogue of Yimengite

Crystallography Reports - The structure of a potassium compound with the chemical formula K0.90Ti5.16Cr2.94Fe2.54Mg0.87Al0.22Mn0.30O19 has been investigated by single-crystal X-ray diffraction...     

Pressure controllable phase transition in MoTe2 by the interlayer band occupancy

High pressure can effectively control the phase transition of MoTe₂ in experiment, but the mechanism is still unclear. In this work, we show by first-principles calculations that the phase transition is suppressed and $1T^{\prime }$ phase becomes more stable under high pressure, which originates from the pressure-induced change of the interlayer band occupancies near the Fermi energy. Specifically, the interlayer states of $1T^{\prime }$ phase tend to be fully occupied under high pressure, while they keep partially occupied for the $T_d$ phase. The increase of the band occupancies makes the $1T^{\prime }$ phase more favorable in energy and prevents the structure changing from $1T^{\prime }$ to $T_d$ phase. Moreover, we also analyze the superconductivity under high pressure based on BCS theory by calculating the density of states and phonon spectra. Our results may shed some light on understanding the relationship between the interlayer band occupancy and crystal stability of MoTe₂ under high pressures.     

Optical Properties of px + ipy Superconductors with Strong Impurities

JETP Letters - We study effects of strong impurities on the optical properties of a chiral px + ipy superconductor with broken time-reversal symmetry. Potential impurities create subgap states in...     

Reaction of NaBiO3 with Ba2+ Ions in an Alkaline Medium

Russian Journal of General Chemistry - The reaction of NaBiO3·nH2O with Ba2+ ions in an alkaline medium has been studied using X-ray diffraction and chemical analysis methods. Dark green...     

Weak Antilocalization Effect in an AlAs/AlGaAs Quantum Well

JETP Letters - Weak antilocalization in a narrow AlAs quantum well containing a two-dimensional electron system with a large effective mass at low temperatures has been studied. Such quantum...     

Self-Sustained Oscillations of the Torque under High-Pressure Torsion in an NdFeB Alloy

JETP Letters - The behavior of an NdFeB-based multicomponent alloy subjected to high-pressure torsion has been studied. The high-pressure torsion results in the partial amorphization of the alloy,...     

Structural and electrical performance of epitaxial InP based heterojunctions prepared by liquid phase epitaxy

Thin films of InP was grown on single crystalline substrates of Si to form InP/Si heterojunctions by liquid phase epitaxy (LPE) and its morphology and crystalline characteristics were achieved. The essential electrical properties and its main parameters were extracted using the current density-voltage. The analysis was done to obtain the rectification characteristics which has its maximum value at a certain voltage of 0.7 V. Moreover, the heterojunction obeys ohmic behavior followed by quadratic space charge limited conduction at lower and higher voltage regions, respectively. The conductivity under AC bias as well as the dielectric behaviors of the heterojunction was explored in the frequency range 100 kHz–5 MHz and in the temperature range 298–623 K. The AC conductivity is interpreted by the correlated barrier hopping model via single polaron with activation energy dependent on the applied frequency. The response of the dielectric constants confirms its remarkable dependence on both frequency and temperature.