中药炮制机理研究的思路与方法——以咖啡豆的烘焙原理研究为例

中药炮制是中药学的特色和优势,也是最具我国自主知识产权的学科之一.中药炮制研究的核心是阐明中药炮制机理,这也是制约中药现代化的关键节点.目前大部分中药的炮制机理尚不明确,有待进行系统深入的研究.咖啡豆需要烘培后才可以制成饮料,这个高温烘培过程类似于中药的炮制过程.近年来,国内外专家对咖啡豆高温烘培过程化学成分变化及其机理进行了深入研究,各种新方法和新技术得到广泛应用,取得了系列研究成果,这些研究成果为中药炮制机理研究提供了多种新思路和新方法,也为中药炮制机理的研究和阐明提供了重要示范.     

新型Co（Ⅲ）配合物（CoL3）的合成及其晶体结构

以3,5-二溴水杨醛缩甲胺希夫碱(HL)为定向配体,硝酸钴为金属离子源,采用溶剂热法在乙腈中合成了一个新型的单核钴(Ⅲ)配合物(Co L3,1),其结构经IR和X-射线单晶衍射表征。1属单斜晶系,空间群P21/n,晶胞参数a=13.833 2(4),b=20.558 2(8),c=20.691 7(7),β=100.622(3)°,V=5 783.6(3)3,Z=8,Dc=2.147 g·cm-3,R1=0.045,wR2=0.092,S=1.02。1中Co(Ⅲ)分别与三个二齿配体上的三个O原子和三个N原子配位,形成轻度扭曲的八面体构型。分子间通过C-H┈Br和Br┈Br弱作用相互连接成三维网络结构。     

A k·p analytical model for valence band of biaxial strained Ge on（001） Si1-xGex

In this paper,the dispersion relationship is derived by using the k·p method with the help of the perturbation theory,and we obtain the analytical expression in connection with the deformation potential.The calculation of the valence band of the biaxial strained Ge/（001）Si1-xGex is then performed.The results show that the first valence band edge moves up as Ge fraction x decreases,while the second valence band edge moves down.The band structures in the strained Ge/（001）Si 0.4 Ge 0.6 exhibit significant changes with x decreasing in the relaxed Ge along the [0,0,k] and the [k,0,0] directions.Furthermore,we employ a pseudo-potential total energy package（CASTEP） approach to calculate the band structure with the Ge fraction ranging from x = 0.6 to 1.Our analytical results of the splitting energy accord with the CASTEP-extracted results.The quantitative results obtained in this work can provide some theoretical references to the understanding of the strained Ge materials and the conduction channel design related to stress and orientation in the strained Ge pMOSFET.     

晚期糖基化终末产物的特性及其研究现状分析

分析了晚期糖基化终末产物的生化特性和主要结构形式，介绍了目前检测晚期糖基化终末产物的主要方法和各自的优缺点，讨论了荧光光谱检测方法。用检测系统测试了晚期糖基化终末产物的激发光谱，同时采用370nm的单色光作为激发光源，分别对正常人和糖尿病患者的皮肤进行了荧光光谱检测，通过获得的发射荧光光谱分析可以发现两者在450nm附近的荧光存在明显的差异。结果表明该荧光光谱测量系统快速、无创、简单，可应用于对糖尿病、人体衰老、氧化应激等病情进行早期预测和诊断。     

Study on hydrogen sulfide plasma passivation of 790-nm laser diode cavity surface

In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes(LDs) by means of H2S plasma passivation technology,H2S plasma passivation treatment is performed on the GaAs(110) surface.The optimum passivation conditions obtained are 60-W radio frequency(RF)power and 20-min duration.So the laser cavity surfaces axe treated under the optimum passivation conditions.Consequently,compared with unpassivated lasers with only AR/HR-coatings,the catastrophic optical damage (COD) threshold value of the passivated lasers by H2S plasma treatment is increased by 33%,which is almost the same as that of (NH4)2Sx treatment.And the life-test experiment has demonstrated that this passivation method is more stable than(NH4)2Sx solution wet-passivated treatment.     

Research on identifying the order of fringe pattern traces using angular scan and zone search method

A method for automatically identifying the order of fringe pattern traces is presented. It uses the simplified Otsu algorithm for obtaining the threshold, the angular scan in the range of 45~ for searching the trace positions, and the zone search technique for identifying different traces. Experimental results show that the proposed method may reliably obtain the order of fringe pattern traces orientating from almost 45° to 90°.     

Normalized intensity correlation function of single-mode laser system driven by colored cross-correlation noises

Considering a single-mode laser system with cross-correlated additive colored noise and multiplicative colored noise, we study the effects of correlation among noises on the normalized intensity correlation function C(s).C(s) is derived by means of the projection operator method.     

Closely packed dense frequency selective surface

In order to realize wideband filtering properties of frequency selective surface （FSS）, FSS of closely packed elements is presented. The Y loop elements are chosen as the graphics elements. Based on the spectral domain method, the frequency response is analyzed for different incident angles and polarizations. The result of the numerical analysis shows that the dense FSS has wide passband with better independence of angle and polarization.     

Kinetic modeling of a high power fast-axial-flow CO2 laser with computational fluid dynamics method

A new computational fluid dynamics (CFD) method for the simulation of fast-axial-flow CO2 laser is developed.The model which is solved by CFD software uses a set of dynamic differential equations to describe the dynamic process in one discharge tube.The velocity,temperature,pressure and turbulence energy distributions in discharge passage are presented.There is a good agreement between the theoretical prediction and the experimental results.This result indicates that the parameters of the laser have significant effect on the flow distribution in the discharge passage.It is helpful to optimize the output of high power CO2 laser by mastering its kinetic characteristics.     

Solvothermal Synthesis and Crystal Structure of a Layered Thioantimonate(Ⅲ) [C4H9NH3]2Sb4S7

An inorganic-organic hybrid thioantimonate(Ⅲ) [CH3(CH2)3NH3]2Sb4S7 1 with layered structure was synthesized by solvothermal method.1 crystallizes in the triclinic system, space group P with a = 7.0124(11), b = 11.919(2), c = 14.879(3) (A), α = 108.791(3), β = 102.441(3), γ = 92.846(2)o, V = 1140.1(3) (A)3, Mr = 859.71, Z = 2, Dc = 2.504 g/cm3, μ= 5.324 mm-1, F(000) = 804, S = 1.013, the final R = 0.0297 and wR = 0.0618 for 3534 observed reflections with I＞2σ(I). 1 consists of [C4H9NH3] cations and two-dimensional [Sb4S7]n2n-anion which is composed of three SbS3 trigonal pyramids and one SbS4 unit joined by sharing common corners. The anionic layers are stacked perpendicularly to the c axis of the unit cell forming two-dimensional channels between the layers. The [C4H9NH3] cations interdigitate in a bilayer and reside in the 2D channels leading to a sandwich-like arrangement of the anion and cations.