基于抛光基材的热蒸镀铜箔生长高平整单层石墨烯薄膜

在石墨烯的化学气相沉积工艺中,铜箔是决定石墨烯薄膜质量的重要因素。传统铜箔由于制备工艺的限制,存在大量的缺陷,导致石墨烯薄膜的成核密度较高。本工作选用抛光铝板、抛光不锈钢板、微晶玻璃和SiO₂/Si作为基材,用热蒸镀法制备了不同粗糙度的铜箔,并详细讨论了以该系列铜箔生长高平整度石墨烯薄膜的条件及铜箔对石墨烯薄膜品质的影响。实验结果表明,铜箔以(111)取向为主,与基材分离后,表面具有纳米级平整度。在生长石墨烯后,从SiO₂/Si剥离的铜箔成核密度是4种基材中最小的。同时,从SiO₂/Si剥离的铜箔晶体结构变化最不明显,具有良好的结晶性,表面几乎不存在铜晶界缺陷。当压强为3 000 Pa,氢气和甲烷流速分别为300 mL/min和0.5 mL/min时,可以获得约1 mm横向尺寸的石墨烯单晶晶畴。     

基于平面度的燃料电池电化学性能模拟

 固体氧化物燃料电池的翘曲会影响电极-盖板界面的接触情况，从而影响电化学性能，对相关制造工艺提出了很大的挑战．为了分析燃料电池平面度对放电过程的影响，揭示其潜在的风险，我们建立了两个基于有限元法的仿真模型，对考虑平面度缺陷的燃料电池封装和放电进行分析．在对固体氧化物燃料电池进行平面度测量的基础上，首先建立了具有真实燃料电池翘曲特性的几何模型，分析封装过程中接触压力的分布情况．然后将接触电阻的仿真结果导入到三维多物理场耦合模型中，模拟具有平面度缺陷的燃料电池电化学性能．计算结果展示了燃料电池两侧封装过程中接触压力的分布情况．通过对比有接触电阻和无接触电阻的燃料电池电流密度，分析了电池与盖板的接触对放电过程的影响．结果表明，燃料电池的凹陷面较难达到满意的接触状态，需要比凸起面更大的封装压力．燃料电池表面接触电阻的变化将引起电流传导路径的变化，产生局部高电流或低电流．这项工作强调了在燃料电池中保持均匀分布的接触电阻的重要性，为今后的优化工作奠定了基础．     

大口径石英基底衍射透镜的高精度制备方法

针对传统接触式曝光过程中掩模版因自身重力产生形变从而引入不可忽视的线宽误差和位置误差的问题,提出了一种大口径石英基底衍射透镜的高精度制备方法.采用背面具有真空道的高平面度、高强度金属校正工装吸附在掩模版上,利用掩模版上下表面的压强差使其与工装高度贴合,确保掩模版的高平面度.待石英基底所有区域均与掩模版结构面紧密贴合后取下工装.完成接触式曝光和显影后,采用反应离子刻蚀技术对大口径石英基底进行刻蚀,最终得到高精度微纳米结构.经有限元分析,使用该校正工装后,掩模版的形变量由28.85μm减小为0.88μm.实验结果表明,采用该方法制备的口径430mm两台阶石英基底菲涅尔衍射透镜波像差优于1/25λ,平均衍射效率为38.24%,达到理论值的94.35%,具有良好的聚焦和光学成像效果.     

Properties of mono-weakly hyponormal 2-variable weighted shifts

In this paper, we study several properties for mono-weakly hyponormal 2-variable weighted shifts. First, we consider propagation phenomena for mono-weakly hyponormal (resp. mono-polynomially hyponormal) 2-variable weighted shifts. Next, we contemplate the mono-weak hyponormality under the Schur product. Finally, we study whether the mono-weak hyponormality is invariant under powers.     

Atomically flat single terminated oxide substrate surfaces

Scientific interest in atomically controlled layer-by-layer fabrication of transition metal oxide thin films and heterostructures has increased intensely in recent decades for basic physics reasons as well as for technological applications. This trend has to do, in part, with the coming post-Moore era, and functional oxide electronics could be regarded as a viable alternative for the current semiconductor electronics. Furthermore, the interface of transition metal oxides is exposing many new emergent phenomena and is increasingly becoming a playground for testing new ideas in condensed matter physics. To achieve high quality epitaxial thin films and heterostructures of transition metal oxides with atomically controlled interfaces, one critical requirement is the use of atomically flat single terminated oxide substrates since the atomic arrangements and the reaction chemistry of the topmost surface layer of substrates determine the growth and consequent properties of the overlying films. Achieving the atomically flat and chemically single terminated surface state of commercially available substrates, however, requires judicious efforts because the surface of as-received substrates is of chemically mixed nature and also often polar. In this review, we summarize the surface treatment procedures to accomplish atomically flat surfaces with single terminating layer for various metal oxide substrates. We particularly focus on the substrates with lattice constant ranging from 4.00 Å to 3.70 Å, as the lattice constant of most perovskite materials falls into this range. For materials outside the range, one can utilize the substrates to induce compressive or tensile strain on the films and explore new states not available in bulk. The substrates covered in this review, which have been chosen with commercial availability and, most importantly, experimental practicality as a criterion, are KTaO₃, REScO₃ (RE = Rare-earth elements), SrTiO₃, La_0.18Sr_0.82Al_0.59Ta_0.41O₃ (LSAT), NdGaO₃, LaAlO₃, SrLaAlO₄, and YAlO₃. Analyzing all the established procedures, we conclude that atomically flat surfaces with selective A- or B-site single termination would be obtained for most commercially available oxide substrates. We further note that this topmost surface layer selectivity would provide an additional degree of freedom in searching for unforeseen emergent phenomena and functional applications in epitaxial oxide thin films and heterostructures with atomically controlled interfaces.     

67.9W高功率全光纤白光超连续谱激光器

利用自主研发的全光纤被动锁模激光器以及高功率光纤模场匹配器,将145 W的皮秒脉冲耦合进国产光子晶体光纤,实现了67.9 W的高功率全光纤结构白光超连续谱输出,光谱范围为500~1700nm,10dB光谱宽度大于1000nm(泵浦波长除外)。整个激光器系统的光-光(半导体泵浦源输出激光-超连续谱输出激光)转化效率达到33.8%。     

一类循环系的平坦性

设Ｓ是幺半群,ｘ_１,ｘ₂,…∈Ｓ且满足ｘ_i+１ｘ_i＝ｘ_i,ｉ＝１,２……ｙ是S中的任意元素,记H={(yx_i,x_i)|i=1,2,…}.设ρ(H)是S的由Ｈ生成的最小右同余,本文证明了S／ρ（Ｈ）是平坦右Ｓ－系．     

Does the flatness of the velocity derivative blow up at a finite Reynolds number?

A tentative suggestion is made that the flatness of the velocity derivative could reach an infinite value at finite (though very large) Reynolds number, with possible implications for the singularities of the Navier—Stokes equations. A direct test of this suggestion requires measurements at Reynolds numbers presently outside the experimental capacity, so an alternative suggestion that can be tested at accessible Reynolds numbers is also made.     

Stability for a random evolution equation with Gaussian perturbation

In this paper we consider a random evolution equation which is perturbed by Gaussian type noise, and show how to construct its coupled solutions. On the basis of the coupling results, we discuss the asymptotic flatness and the stability in total variation norm for the solutions of the equation. In addition, we also prove the Feller continuity, and the existence and uniqueness of invariant measures of the solutions.     

宽带FRA中同时实现信号增益与噪声平坦的快速算法

首先优化了多波抽运拉曼光纤放大器的功率耦合方程,并利用小信号方法解决反向抽运的边值问题,其次采用遗传算法同时实现了信号增益谱和噪声谱的平坦.计算表明:双向抽运方式下系统噪声谱在C L波段(1.53~1.61μm)比反向抽运更为平坦;抽运光数目与增益平坦度呈非线性关系并存在下限值.通过多次测试,对于10波抽运,100信道的DWDM系统(带宽为80 nm),增益波动小于1 dB的优化时间可控制在400 s以内.