有限维路代数的K_1群

本文通过计算有限维路代数k△的单位群和单位群的阿贝尔化,完全刻划了 任意域上有限维路代数的K1群.     

甚高频高速沉积微晶硅薄膜的研究

采用甚高频化学气相沉积(VHF-PECVD)技术制备了系列微晶硅(μc-Si:H)薄膜样品，重点研究了硅烷浓度、功率密度、沉积气压和气体总流量对薄膜沉积速率和结晶状态的影响,绘制了沉积气压和功率密度双因素相图. 以0.75nm/s的高速沉积了器件质量级的微晶硅薄膜，并以该沉积速率制备出了效率为5.5%的单结微晶硅薄膜电池. 关键词： 微晶硅薄膜 高速沉积 甚高频化学气相沉积     

半完全环的K1群

在一定的条件下，半完全环R的K1群可以通过R／J（R）的直和分解得到。     

载铁(β-FeOOH)球形棉纤维素吸附剂去除地下水砷(Ⅲ)的研究

制备了一种载铁(β-FeOOH)球形棉纤维素吸附剂,并用于地下水中As(Ⅲ)的去除.吸附剂对As(Ⅴ)和As(Ⅲ)在吸附容量、选择性和速率等方面都具有良好的性能,无需预氧化As(Ⅲ),其适用pH范围宽,不必调节原水的pH.吸附剂孔隙度大,机械强度好,活性成分铁的载入量高,吸附As(Ⅲ)的活性好.Langmuir和Freundlich方程能较好地描述吸附平衡方程,其吸附动力学符合Lagergren准二级方程.吸附As(Ⅲ)的最佳pH范围为6-9.SO42-和Cl-等干扰离子均不影响As(Ⅲ)的去除.柱吸附实验表明,即使在较高流速和As(Ⅲ)进水浓度下,吸附剂对As(Ⅲ)的去除依然具有很高的穿透容量和饱和容量.吸附剂可以用NaOH溶液再生,洗脱和再生效率较高.活性成分β-FeOOH形态稳定,柱实验和再生时铁均无泄漏.     

世界经合组织金融素质测量工具的实用性评估——基于甘肃省辖集中连片特殊困难地区实地调查

为了推进国家间国民金融素质比较研究,世界经合组织(OECD)构建了标准化的跨国金融素质测量工具,目前该工具已被30多个国家采信,对于后发国家具有重要的借鉴意义。然而,金融素质是高度情境化的构念,测量工具的情境化是保证测量结果稳健可靠的必要环节。为此,本文实施了针对该工具措辞和计分体系的实用性调查,此次调查的对象分别为相关领域专家和甘肃省辖集中连片特殊困难地区农户,旨在为该工具中国化的路径选择提供佐证。调查结果显示,对于受访农户而言,该工具中“通货膨胀的认知”等5个问题的措辞过于复杂,需要进一步修正;不同类型专家对该工具各构成要件的重要性评估未形成一致意见,需要进一步探寻上述差异产生的原因及其可能的弥合方式。     

机器人焊缝中心三维定位的解析方法

机器人焊接过程中焊缝三维空间中心位置的确定是焊缝自动跟踪系统重要的一环.由于多数焊缝为直线,且实际的焊缝在小范围内可近似为直线,因而特征点的空间坐标确定以后如何确定直线是问题的关键所在.在焊缝特征点确定以后,根据空间解析几何的定位原理,结合最小二乘法,首先给出了焊缝中心线的确定原则,其次,按直线的点向式方程,利用焊缝特征点的全息,给出了中心直线的点和方向向量确定的解析方法.     

机器人圆形焊缝三维定位方法

自动化寻迹焊接过程中有许多焊缝为圆形,在焊缝特征点的坐标确定以后如何确定圆形焊缝的中心轨迹线是至关重要的.利用空间解析几何的原理,结合最小二乘法,既利用焊缝的已知信息又利用了实时监测点的信息,给出了圆形焊缝三维空间中心位置的确定方法.实验表明,该方法具有较高的精度和较强的实用性.     

一种测距定位仪的数学模型

将观测定距的一般性问题归结为对于已知平面矩形的测距问题.将实物成像的标示点屏幕坐标作为已知观测数据,给出了物距的简明计算方法.     

FPF环和AUT-PIC性质

设R是—FPF环（不要求交换），本文研究了R的一些性质并给出了R上的有限生成投射左R-模的两种直和分解．在本文的第三部分，我们证明了以下结果：（a）FPF环具有Aut－Pic性质．（b）R有Aut-Pic性质当且当R／I有Aut－Pic性质，I是R的根式理想．（c）作为Aut－Pic性质的一个应用，定理3.3推广了[9]中的一个结果．     

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78\,nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5{\%} efficiency are fabricated.