泄漏辐射模显微镜测量薄膜的局域双折射率

介质双折射率的传统测量方法有偏振光椭圆率测量仪和光学相干断层扫描等.提出一种新型的介质双折射率测量方法--切向偏振光照明的泄漏辐射模显微镜激励波导模共振,通过对物镜后焦面的傅里叶光谱信息进行成像,测量介质的双折射率.分析了利用切向偏振光照明的泄漏辐射模显微镜测量介质双折射率的原理并测量了双折射率差为△n≈0.005的偶...     

五边形图的标准化的拉普拉斯谱及其应用

一个图的标准化的拉普拉斯特征值对图在结构性质和一些相关的动力学方面提供了信息,尤其在相关的随机过程方面. 在这篇文章中,我们给出了由一个简单连通图迭代生成的五边形图的标准化的拉普拉斯谱.在应用方面,我们得到了关于倍增度基尔霍夫指数,凯梅尼常数和生成树的个数的重要公式.     

便携式表面等离子体共振传感器温度特性

采用美国德州仪器公司开发的Spreeta系列小型化SPR传感模块,实验研究了环境温度变化对便携式表面等离子体共振传感器工作特性的影响.发现随着温度的升高,共振角度向小角度方向移动,并提出了完整的理论分析模型.该模型讨论了环境温度变化对金属薄膜、棱镜、待测物的物理性质的影响,模拟结果与实验测量结果吻合得很好.     

Photonic Crystal Fibre SERS Sensors Based on Silver Nanoparticle Colloid

A photonic crystal fibre （PCF） surface enhanced Raman scattering （SERS） sensor is developed based on silver nanoparticle colloid. Analyte solution and silver nanoparticles are injected into the air holes of PCF by a simple modified syringe to overcome mass-transport constraints, allowing more silver nanoparticles involved in SERS activity. This sensor offers significant benefit over the conventional SERS sensor with high flexibility, easy manufacture. We demonstrate the detection of 4-mercaptobenzoic acid （4-MBA ） molecules with the injecting way and the common dipping measurement. The injecting way shows obviously better results than the dipping one. Theoretical analysis indicates that this PCF SERS substrate offers enhancement of about 7 orders of magnitude in SERS active area.     

C60醛类衍生物非线性光学特性研究

研究了加合不同取代基团的C60醛类衍生物的光学非线性性质。利用简并四波混频（DFMW）方法获得了C60醛类各衍生物的三阶光学非线性超级化率γ^(3)及相应的三阶光学非线性系数χ^(3)值。同时也研究了它们各自的光限幅特性。结果表明：不同的取代基对C60醛类衍生物三阶光学非线性及光限幅特性的影响不同。     

表面等离子体亚波长光学前沿进展

目前表面等离子体激元(surface plasmon polaritons，SPPs)在光存储、光激发、显微术以及生物光子学等领域中的应用前景受到了广泛的关注．文章介绍了SPPs的基本性质和表面等离子体亚波长光学(surface plasmons subwavelength optics)研究中的热点问题及发展方向．     

Near-field lithography on the azobenzene polymer liquid crystal films

In this article, we reported near-field research on azobenzene polymer liquid crystal films using scanning near-field optical microscopy (SNOM). Optical writing and subsequently topographic reading of the patterns with subwavelength resolution were carried out in our experiments. Nanometer scale dots and lines were successfully fabricated on the films and the smallest dot diameter is about 120 nm. The width of the line fabricated is about 250 nm. This method is also a choice for nanolithography. The mechanism of the surface deformation on the polymer films was briefly analyzed from the viewpoint of gradient force in the optical near field. The intensity distribution of the electric field near the tip aperture was numerically simulated using finite-difference time-domain (FDTD) method and the numerical simulation results were consistent with the experimental results.     

基于边缘软判决的小波域自适应图像去噪

提出了一个新的图像去噪方法。该方法基于非抽样小波变换的多分辨分解,在各尺度下对小波系数进行了边缘和非边缘分类,并根据它们的不同统计特性运用了不同的估计技术。鉴于边缘分类的不确定性,提出了依概率的软分类技术,通过计算边缘发生的概率,判决当前系数应该采用哪一种估计。仿真结果表明:该方法在滤除图像噪声的同时,边缘得到了保持,较目前存在的一些方法更具有优越性。     

Preparation and characterization of SiO_2/TiO_2/methylcellulose hybrid thick films for optical waveguides

Optical-quality films of a few μm thickness are a basic re- quirement for integrated optics[1-3]. Since such films are thick by normal coating standards, a number of special- ized methods have been developed to form them. The sol-gel processing is one approach because of the high optical quality of materials produced and freedom to im- pregnate them with a variety of additives to modify their optical characteristics. It is a popular and widespread technique for preparing coating films in labo…     

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes.