Davey-Stewartson系统粗糙爆破解的极限行为

研究了Davey-Stewartson系统(简记为D-S系统)粗糙爆破解的动力学性质.所谓粗糙爆破解即为正则性为H~s(s1)的爆破解,此时D-S系统粗糙解不再满足能量守恒率.利用I-方法与Profile分解理论,得到了D-S系统粗糙爆破解在H~s(R~2)(其中ss_0,且s_0≤(1+11~(1/2))/5≈0.8633)中的极限行为,包括L~2强极限的不存在性与L~2集中性质以及极限图景.     

PL~n∩PL~p空间中MHD方程组强解的存在唯一性及衰减性质

本文运用半群理论和Kato的方法,研究了MHD方程组在PL~n∩PL~p(1相似文献   

二阶椭圆方程的下解及Holder连续的一个新证明(英文)

借助于检试函数和迭代技术,在系数弱光滑性假设条件下,本文研究了二阶椭圆方程的下解和正则性.进一步借助于局部估计和Poincare不等式,我们给出了Holder连续的一个新证明.     

蓝光LD抽运Pr~(3+):LiYF_4 604nm橙光激光器和红橙多波长激射

使用蓝光激光二极管抽运掺镨氟化钇锂(Pr:YLF)块状晶体,获得最大输出功率为166.6mW的σ偏振607.4nm连续橙光输出。通过在谐振腔中插入厚度为0.1mm的玻璃薄片,并适当调节角度,获得了π偏振604.6nm连续橙光输出,最大功率为60.6mW,斜效率达到13.6%。通过进一步调节玻璃薄片的插入角度,进而获得了607、604、640nm的多波长同时激射。     

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.     

外区域上半线性波动方程解的整体存在性

该文研究带耗散项的线性和半线性波动方程外问题. 首先利用一个Sobolev型不等式得到了线性耗散波动方程在外区域上的整体能量衰减估计, 此结果用来证明非线性项为|u|^p (2+) 的半线性波动方程解的整体存在性. 为此, 该文主要研究N维(3≤ N≤7)外区域上球对称解的情形.     

REMARKS ON THE LIFESPAN FOR THE SOLUTION TO NONLINEAR WAVE EQUATIONS IN THREE SPACE DIMENSIONS

The authors consider the Cauchy problem for the following nonlinear wave equationswhere x ∈ R3, t ≥ 0, ε > 0 is a small parameter, and obtain the sharp bounds for the lifespan of solution to (0.1). Specially, it is proved that there exist two constants C1 and C2, which are independent of ε, then the lifespan T(ε) satisfies the folowing inequalities     

Davey-Stewartson系统在低能量空间中的整体适定性

得到了具粗糙初值的Davey-Stewartson系统的整体适定性,具体地说,证明了当初值在Sobolev空间Hs(s>2/3)中的整体解的存在性,即解可能具有无限能量.证明的创新在于应用Bourgain提出的Fourier限制方法及分频技术,同时得到了解的Hs范数关于时间的增长可由一多项式函数控制.     

复合函数单调性的一个代数运算性质

通过数学归纳法证明了复合函数单调性的一个比较简单实用的性质:设y=f(x)在定义域的某个区间是Nt个单调函数的复合函数,则f(x)的单调性可以由Nt及这Nt个函数中单调递增的函数的个数之和的奇偶性来确定