一种环形屏积分球光源的辐照均匀度研究

均匀光源被广泛应用于光学成像、遥感仪器的研制与标定等领域。提出了一种具有环形遮挡屏的积分球光源结构，以辐照均匀度分布特性为目标，利用蒙特卡洛(MCM)分析通过改变光源类型、挡板位置、开口大小、光源数量等参数对光源结构进行分析与优化。结果显示，朗伯特光源较之准直型光源辐照均匀度平均提高2.32%；挡板位置靠近积分球边缘时，辐照均匀度略低于其他位置；综合考虑辐射能量与照度均匀度，积分球开口比定在30%~35%区间内更为合适；辐射能量与光源数量呈线性关系，且不均匀度随光源数量在2.46%~3.38%波动。优化后的环形遮挡屏结构，可作为辐照均匀的光源应用于实际场景。     

R32/PAG润滑油体系的黏度和质扩散系数实验研究

本文采用光散射法对R32/PAG润滑油混合体系的动力黏度和质扩散系数进行了实验研究,温度范围从293.15~353.15 K,压力范围从0.09~1.26 MPa,共计获得16个数据点。R32/PAG体系的表面波散射特性属于过阻尼区,当温度一定时,R32/PAG混合物的黏度随着R32所占比例的升高而减小。本文黏度、质扩散系数实验数据与所获得模型的平均绝对偏差分别为1.17%、0.15%,可用于R32/PAG制冷系统的优化设计。     

基于VI-SLAM的四旋翼自主飞行与三维稠密重构

提出全自主的微型飞行器,使用板载传感器实现三维的同时定位与稠密重构。在ORB-SLAM系统的基础上,基于扩展卡尔曼滤波器实现了视觉-惯导的传感器融合,提高了系统的稳健性和精度以满足微型飞行器自主飞行的要求。由于ORB-SLAM系统创建的稀疏的特征地图不能用于微型飞行器的避障和导航,使用双目摄像机提出了改进的构建地图的方法,由稀疏特征点地图扩展为稠密的八叉树地图。通过EuRoC数据集进行评估,可以验证本文算法较基于关键帧的视觉-惯导算法平均精度提升了1倍。将本文算法应用于所搭建的四旋翼自主飞行平台,仅依靠板载传感器和处理器,实现了全自主飞行与稠密地图构建,验证了本文算法的有效性和稳健性。     

Optical characterization of antimony-based bismuth-doped thin films with different annealing temperatures

Antimony-based bismuth-doped thin film,a new kind of super-resolution mask layer,is prepared by magnetron sputtering.The structures and optical constants of the thin films before and after annealing are examined in detail.The as-deposited film is mainly in an amorphous state.After annealing at 170-370℃,it is converted to the rhombohedral-type of structure.The extent of crystallization increased with the annealing temperature.When the thin film is annealed,its refractive index decreased in the most visible region,whereas the extinction coefficient and reflectivity are markedly increased.The results indicate that the optical parameters of the film strongly depend on its microstructure and the bonding of the atoms.     

基于改进U-Net的量子点STM图像分割

为提升量子点图像分割精度,降低特征识别误差,提出一种基于改进U-Net的量子点图像分割方法.首先,在预处理阶段,设计了以色彩通道为权值的灰度化算法,以提升后续分割效果.其次,在STM图像分割部分,在原始U-Net结构上引入中间过渡层以均衡网络各层特征.而后,建立数据集,并通过实验对比不同分割算法的精确度、召回率、F-measure.最后,将分割算法应用于量子点的特征识别,并测试了不同分割方式对应用的影响.实验结果显示,改进灰度化方法保留细节信息丰富,明显提升了量子点分割精度;改进U-Net的平均精确率、召回率、F-measure相较原始网络分别提升了13.83%、2.16%、8.13%.同时,实验数据表明由于分割精度的提升,量子点数量、纵横比等特征参数的识别更加精确.     

对羟基苯甲酸酯分子印迹电化学传感器的研制

利用分子印迹技术,以对羟基苯甲酸乙酯为模板分子,甲基丙烯酸为单体,在玻碳电极表面原位聚合分子印迹聚合物敏感膜.采用方波伏安法对对羟基苯甲酸乙酯在该印迹电极上的电化学行为进行了研究,当响应时间为15 min时,0.95 V(vs SCE)处的峰电流与对羟基苯甲酸乙酯的浓度在2.0×10-6 ～2.0×10-4 mol/L范围内呈线性关系,检出限(S/N=3)为1.0 μmol/L,而相同条件下,对羟基苯甲酸乙酯在控制电极上的响应非常小并对浓度变化不灵敏;同时在印迹电极上氧化峰电位较在裸电极上发生了微弱正移.同一支印迹电极对对羟基苯甲酸乙酯响应值的RSD为4.3%(n=10).该印迹电极对尼泊金酯类具有良好的选择性,对对羟基苯甲酸甲酯、丙酯以及丁酯的选择性系数分别为1.89、1.70和2.01;对结构相似的苯酚、对羟基苯甲酸、对氨基苯甲酸等响应不灵敏,对结构差异较大的如维生素C等几乎无响应.用该分子印迹电极对实际样品进行分析,加标回收率大于90%.     

Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.     

Optical Recording Properties of Metal-Azo Dye as Recording Medium with Super-Resolution Near-Field Structure

A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure （Super-RENS） of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270℃ and the mass loss is about 48% in a narrow temperature region （15℃）. The complex refractive index N （N = n ＋ iκ） is measured. High refractive index （n = 2.45） and low extinction coefficient （κ = 0.2） at the recording wavelength 65Ohm are attained. Static optical recording tests with and without Super-RENS are carried out using a 65Ohm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.     

High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

A novel read-only memory (ROM) disc with an Ag11ln12Sb51Te26 super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40 dB could be obtained from small pits (380nm), which are below the readout resolution limit (400nm), in our dynamic setup with a wavelength of 632.8 nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power,readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50nm and the corresponding carrier-to-noise ratio is more than 40dB at readout power of 4mW and readout velocity of 2m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.