微细管碳纳米管悬浮液强制对流换热实验研究

测量了水平微细圆管内蒸馏水和不同质量浓度的水基多壁碳纳米管纳米流体在低雷诺数下的强制对流换热特性。实验结果表明,与蒸馏水相比,纳米流体的对流换热系数显著提高,且随质量浓度和管内雷诺数的增大而增大;并且研究了流体管内流动阻力特性,得到的泊肃叶数f·Re值随着雷诺数的变化不明显,但纳米流体的f·Re值要明显小于纯水。     

数列的新靓点——派生数列

2008年的数学高考考试大纲中,数列部分有一类能力要求为A,其余三类的能力要求均达到C级,它们分别是等差数列、等比数列以及数列的综合应用.对于能力C级,即为灵活和综合应用,要求学生系统地掌握知识的内在联系,能运用所列知识分析和解决较为复杂或综合性的问题.……     

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well(MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency(EQE) of the solar cells increases in a low energy spectral range(λ 370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths(λ 370 nm).     

稀土硝酸盐与三缩四乙二醇一二一(8- 哇咐基)醚固体配合物的合成

合成了三缩四乙二醇一二一(g_A奎琳基)醚(I)配体，并首次合成了与十四个稀土硝酸盐的固体配合物二用IR,TCr; DTA等测试确定固体配合物组成为〔Ln(N03)3)}( I ),(Ln = La, Ce, Pr, Nd)和〔Ln(N03)3)s( I )}H,O(Ln=Sm-Yb和Y).配体(I}和配合物〔La(N03)3]3( I):核磁共振谱分析表明，醚链上的质子向低场位移，“奎咐环I质子向高场位移，这说明会闹与配体(I)中刀奎琳上的氮是直接配位的，     

GaN基紫外探测器的研究与制备

报道了用MOCVD方法在GaAs衬底上制作p-GaN/InGaN/n-GaN结构紫外探测器.我们对器件进行了测试分析.根据器件光伏信号强度和相位的测量结果,我们得到了该器件的能带结构图.我们还发现Ni/Au电极与p-GaN之间的接触表现出肖特基接触的特性.该探测器在入射光波长为375nm处的响应度大约为7.4×10-3A/W.     

A MOVPE method for improving InGaN growth quality by pre-introducing TMIn

We propose a metal organic vapor phase epitaxy(MOVPE) method of pre-introducing TMIn during the growth of uGa N to improve the subsequent growth of In Ga N and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive In Ga N growth rate. Further x-ray diffraction(XRD), photoluminescence(PL), and atomic force microscope(AFM) tests showed that the quality of In Ga N is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when In Ga N is grown, so as to improve the material quality.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

FORMATION AND MAGNETIC PROPERTIES OF A NOVEL Gd3(Fe,Ti)29Ny NITRIDE

The novel Gd₃(Fe_0.978Ti_0.022)₂₉ compounds and their nitride have been synthesized. The X-ray diffraction patterns of the Gd₃(Fe,Ti)₂₉N_y and its parent compounds were indexed in the Nd₃(Fe,Ti)₂₉-type structure with a monoclinic symmetry and space group P2₁/c, Both the nitride and the parent compounds exhibit ferrimagnetlc coupling. Nitrogenatio led to an increase in Curie temperature and saturation magnetization. The Curie temperatures are 517K for the parent and 765K for the nitride. The saturation magnetizations σ_s at 4.2K are 101.9A·m²/kg for the parent and 128A·m²/kg for the nitride. Both the nitride and parent exhibit a planar anisotropy. Nitrogenation led to a decrease of the contribution of Fe-sublattice to planar anisotropy. The anisotropy fields at 4.2K are 9.8T for the parent and 6.5 T for the nitride.     

等温气液平衡盐效应的研究——有机溶剂-水-无机盐体系

本文报导了甲醇-水-氯化锂、乙醇-水-氯化锂、丙酮-水-氯化锂和丙酮-水-碳酸钾体系在298.15 K时的等温气液平衡数据, 以及用三参数Margules公式的关联结果。提出了由等温气液平衡数据计算混合溶剂中盐的溶剂化数的理论公式。     

Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of （100） reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.