纳米GaSb-SiO2镶嵌复合薄膜的制备及光学性质

用射频磁控溅射技术制备出纳米GaSb颗粒镶嵌在SiO2介质中的复合薄膜.透射电子显微镜观察表明, 纳米GaSb颗粒均匀地镶嵌在SiO2介质中.X射线衍射显示出GaSb (111),GaSb(220) 和GaSb(311)典型的面心立方闪锌矿结构特征.复合薄膜的室温光吸收谱表明,吸收边发生了较大的蓝移,并且,蓝移量随纳米GaSb的颗粒尺寸减小而增大.复合薄膜的室温Raman光谱表明: 薄膜的Raman散射峰较块体材料的有较大的红移和宽化.用量子限域理论和张应力效应对这些现象作了解释.     

纳米Pd粉的热稳定性研究

采用化学液相合成法制备了纳米Pd,热稳定性研究表明,温度在773～523K内,样品的平均粒径与退火温度T之间服从Arrhenius关系,且平均粒径与退火时间t之间满足经验公式=ktn。纳米Pd的热稳定范围T≤250℃。计算得到纳米Pd颗粒生长的表观激活能为0.15eV,远比纳米复合材料的生长激活能小（约为1eV）。故纳米Pd颗粒-极易长大,热稳定范围非常窄。     

Effect of Substrates on CuInSe2 Nanoparticle Thin Films by Radio Frequency Reactive Sputtering

CuInSe2(CIS) nanoparticle thin films have been prepared by radio frequency reactive magnetron sputtering from compound ternary fan-shaped targets on low-temperature substrates with pure argon gas as the atmosphere.The stoichiometry of the ternary compound semiconductor quantum dots can easily be controlled by the ratios of the ternary elements and sputtering parameters.CIS nanoparticle thin films regularly shaped and distributed reasonably uniform in size on substrates of 7059 glass etc can be grown in this way.The average particle diameter can be varied between 40-80 nm by an appropriate choice of the substrate temperature,power density and total CIS coverage.the optical and electrical properties of the CIS films have also been studied.     

Raman properties embeddedof GaSb nanoparticlesin SiO2 films

The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.     

第一届全国固体内耗学术会议简介

第一届全国固体内耗学术会议于1984年10月9日至12日在合肥举行.中国科学院固体物理研究所受中国物理学会的委托主办了这次会议,来自国内42个单位的110名同志参加了会议.会上宣读论文99篇. 何怡贞研究员、徐祖耀教授、葛庭燧研究员和王业宁教授分别作了题为“金属玻璃的内耗”、“形状记忆合金及其内耗”、“晶粒间界内耗的新进展”、“马氏体相变及预相变的内耗与超声衰减”的报告.学术论文和报告充分反映了过去一年我国在晶界内耗、相变内耗、位错内耗、金属玻璃内耗、高阻尼材料内耗、点缺陷内耗、高分子内耗、内耗仪器设备及内耗工作在实…     

聚四氟乙烯薄膜的制备及其红外光谱研究

用射频磁控溅射方法分别在NaCl和Si基底上制备了聚四氟乙烯薄膜．通过红外吸收光谱的研究分析了薄膜中的成分及分子链结构． 关键词：     

Study of the electric capacitance spectra on symmetric quantum-dot pattern

We have calculated the ground-state energy of the symmetric quantum-dot pattern by the ab initio calculation method, i.e. unrestricted Hartree-Fock-Roothaan (UHFR) method based on the Gaussian basis, and studied their electric capacitance spectra, assuming each quantum dot of quantum-dot pattern to be confined in a three-dimensional spherical potential well of finite depth. For the systems in question, our results show that our method and theoretical model not only give the electric capacitance peaks similar to s-shell and p-shell atom-like quantum dot, but also show some new fine-structure of electric capacitance in the symmetric quantum-dot pattern system. This method might be a feasible tool to study few-electron problems on the symmetric quantum-dot pattern system.     

气相法合成一维无机纳米材料的研究进展

一维无机纳米材料是研究电子传输行为、光学特性和力学机械性能等物性的尺寸和维度效应的理想系统，将在构筑纳米电子和光电子器件等集成线路和功能性元件的进程中充当非常重要的角色，已成为当前纳米材料科学领域的前沿和热点。本文将从一维无机纳米材料的合成、表征和物性研究等方面，结合近年来国内外的最新进展对这一新兴领域作一概述。     

电沉积制备磁性纳米线的研究进展

多孔阳极氧化铝为模板制备纳米结构材料具有独特的优越性,颇受人们的关注,近年来获得了深入的研究.文章介绍了用电化学沉积方法制备一维磁性纳米线的最新研究进展,阐述了各种结构磁性纳米线,包括单质、合金、多层、超晶格磁性纳米线的研究现状,展望了磁性纳米线的研究方向和在高密度垂直磁记录与巨磁电阻等方面的应用前景.     

纳米板钛矿基TiO2的晶粒尺寸效应

借助精确的X射线衍射测量,结合独立衍射峰对不同晶粒度纳米板钛矿基TiO-2样品中板钛矿和金红石相的微结构参量进行了较细致的研究,给出了标征物相、晶面指数(hk1)和晶面间距d-{hkl}值,详细分析结果的系列XRD谱,并得到晶面间距、晶格常数、轴比、晶胞体积等参数数值及其相对常规粗晶的变化情况,从而初步揭示出其晶粒微结构的尺寸效应.作者首次发现,纳米板钛矿基TiO-2样品中板钛矿和金红石相晶粒均存在着非单调的各向异性晶格畸变.