二维电子气等离激元太赫兹波器件

固态等离激元太赫兹波器件正成为微波毫米波电子器件技术和半导体激光器技术向太赫兹波段发展和融合的重要方向之一。本综述介绍AlGaN/GaN异质结高浓度和高迁移率二维电子气中的等离激元调控、激发及其在太赫兹波探测器、调制器和光源中应用的近期研究进展。通过光栅和太赫兹天线实现自由空间太赫兹波与二维电子气等离激元的耦合,通过太赫兹法布里-珀罗谐振腔进一步调制太赫兹波模式,增强太赫兹波与等离激元的耦合强度。在光栅-谐振腔耦合的二维电子气中验证了场效应栅控的等离激元色散关系,实现了等离激元模式与太赫兹波腔模强耦合产生的等离极化激元模式,演示了太赫兹波的调制和发射。在太赫兹天线耦合二维电子气中实现了等离激元共振与非共振的太赫兹波探测,建立了太赫兹场效应混频探测的物理模型,指导了室温高灵敏度自混频探测器的设计与优化。研究表明,基于非共振等离激元激发可发展形成室温高速高灵敏度的太赫兹探测器及其焦平面阵列技术。然而,固态等离激元的高损耗特性仍是制约基于等离激元共振的高效太赫兹光源和调制器的主要瓶颈。未来的研究重点将围绕高品质因子等离激元谐振腔的构筑,包括固态等离激元物理、等离激元谐振腔边界的调控、新型室温高迁移率二维电子材料的运用和高品质太赫兹谐振腔与等离激元器件的集成等。     

Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna

Efficient coupling of terahertz electromagnetic wave with the active region in a terahertz detector is required to enhance the optical sensitivity. In this work, we demonstrate direct integration of a field-effect-transistor(FET) terahertz detector chip at the waveguide port of a horn antenna. Although the integration without a proper backshot is rather preliminary, the noise-equivalent power is greatly reduced from 2.7 nW/Hz~(1/2) for the bare detector chip to 76 pW/Hz~(1/2) at340 GHz. The enhancement factor of about 30 is confirmed by simulations revealing the effective increase in the energy flux density seen by the detector. The simulation further confirms the frequency response of the horn antenna and the onchip antennas. A design with the detector chip fully embedded within a waveguide cavity could be made to further enhance the coupling efficiency.     

关于对广义正定矩阵的进一步研究

文［１］定义了广义正定矩阵集合Ｐ（Ｉ）．文［２］定义了较Ｐ（Ｉ）更广泛的另一个广义正定矩阵集合Ｐ（Ｓ＋）．本文把Ｐ（Ｉ）中矩阵的某些性质，推广到Ｐ（Ｓ＋）中从而丰富了Ｐ（Ｓ＋）矩阵集合的结果。     

无单元法求解任意边界条件下的中厚板弯曲问题

本文用无单元法进行不同边界条件下的中厚板弯曲问题的求解,提出了构造其近似位移函数的三种形式的权函数,从变分原理出发导出了Mindlin-Reissner中厚板弯曲问题的控制方程,并编制了相应的计算程序。数值算例表明,无单元法用于中厚板弯曲问题是合理可行的,其结果具有相当高的精度。     

一类非自治Liénard系统的定性研究

研究自治Liénard系统+f(x).x+e(t)g(x)=h(t)解的定性性态.在一定条件下,我们证明了该系统周期解的存在性、局部唯一性和渐近稳定性,所得结果推广了文[2-4]的相应结论.     

Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

An optimized micro-gated terahertz detector with novel triple resonant antenna is presented.The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna.In finite-difference-time-domain simulations,we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L gs(the gap between the gate and the source/drain antenna) and L w(the gap between the source and drain antenna).With the improved triple resonant antenna,an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×102 V/W at a frequency of 903 GHz at room temperature.     

Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor

In the terahertz(THz) regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.     

滤波器增强的高灵敏度室温HEMT太赫兹探测器

制备了一种集成有太赫兹低通滤波器的高速、高灵敏度GaN/AlGaN高电子迁移率晶体管(HEMT)太赫兹探测器。实验研究表明,当在太赫兹天线与引线电极之间加入低通滤波器时,太赫兹耦合天线的谐振性能恢复,室温下器件的响应度达到了1.05×10~3 V/W;测试带宽为1Hz时,器件的噪声等效功率达到了4.7×10~(-11) W。利用该探测器单元对不同材料进行了快速扫描成像,结果表明,该探测器单元具有较好的成像分辨率,且器件的响应速度优于商用的气动探测器的和热释电探测器的。     

局部凸拓扑向量空间中的不动点定理

本文在局部凸拓扑向量空间中得到了几十新的不动点定理，推广了[2]中的几个重要结果。     

关于对广义的正定矩阵进一步研究

通常讨论矩阵的正定性只局限在实对称矩阵范围内(以下我们把全体n阶实对称正定矩阵的集合记为S~+),随着数学本身的发展和其它学科的需要,有不少人开始研究未必对称的较广义的实正定矩阵.李炯生在文[1]中给出了一类较广义的实正定矩阵的定义: 设A是n阶实方阵.如果对于任何非零的n维列向量X都有 X~TAX>0,其中X~T表示X的转置,则把A叫做正定矩阵.全体这类矩阵的集合记为P(I).文[1]证明了A∈P(I)的充分必要条件是A的对称分量是对称正定矩阵(即把A表示为对称矩阵与反对称阵的和的形式,前者称为对称分量,后者称为反对称分量).同时还推得P(I)中矩阵其