High throughput N-modular redundancy for error correction design of memristive stateful logic

Memristive stateful logic is one of the most promising candidates to implement an in-memory computing system that computes within the storage unit. It can eliminate the costs for the data movement in the traditional von Neumann system. However, the instability in the memristors is inevitable due to the limitation of the current fabrication technology, which incurs a great challenge for the reliability of the memristive stateful logic. In this paper, the implication of device instability on the reliability of the logic event is simulated. The mathematical relationship between logic reliability and redundancy has been deduced. By combining the mathematical relationship with the vector-matrix multiplication in a memristive crossbar array, the logic error correction scheme with high throughput has been proposed. Moreover, a universal design paradigm has been put forward for complex logic. And the circuit schematic and the flow of the scheme have been raised. Finally, a 1-bit full adder (FA) based on the NOR logic and NOT logic is simulated and the mathematical evaluation is performed. It demonstrates the scheme can improve the reliability of the logic significantly. And compared with other four error corrections, the scheme which can be suitable for all kinds of R-R logics and V-R logics has the best universality and throughput. Compared with the other two approaches which also need additional complementary metal-oxide semiconductor (CMOS) circuits, it needs fewer transistors and cycles for the error correction.     

E-不变凸效应代数

本文首先引入了不变凸效应代数,E-不变凸效应代数和E-不变模糊凸效应代数的定义,并给出了相应概念的例子;其次,研究了E-模糊不变凸效应代数在某些条件下得到的集合是稠密的;进而,讨论了如果效应代数上的模糊集是弱下半连续的且它满足一定的条件,则它是E-不变凸模糊效应代数。最后,得到效应代数可嵌入到E-凸效应代数的充要条件。     

可中断半在线排序问题

讨论两台同型机上的可中断半在线排序问题,目标函数为极大化最小的机器完工时间Cmin.首先考虑已知所有工件的加工时间在p和rp(p＞0,r≥1)之间的情形,对任意的参数r,设计了最优半在线算法.接着,对已知最大工件加工时间的情形作了研究,得到了一个竞争比为5/4的最优半在线算法.     

Conductance switching mechanism of Rose Bengal organic thin films in ambient conditions

The molecular thin films of Rose Bengal (RB) embedded in polymethyl methacrylate matrix are fabricated by using the spin-coating technique. The macroscopic current--voltage (I--V) characterization of the film shows that the RB molecule has two conductance switching states with a high ON/OFF ratio in ambient conditions. The infrared spectra indicate that intermolecular hydrogen bonds can form in the RB thin films after their hydrolysis in air. With the first-principles calculations, we demonstrate that the hydrogen bonds will be destroyed in concomitance with the conformational change when the RB molecule switches to its high-conductance state after applying a voltage.