Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology

Three-dimensional (3D) TCAD simulations demonstrate that reducing the distance between the well boundary and N-channel metal-oxide semiconductor (NMOS) transistor or P-channel metal-oxide semiconductor (PMOS) transistor can mitigate the cross section of single event upset (SEU) in 14-nm complementary metal-oxide semiconductor (CMOS) bulk FinFET technology. The competition of charge collection between well boundary and sensitive nodes, the enhanced restoring currents and the change of bipolar effect are responsible for the decrease of SEU cross section. Unlike dual-interlock cell (DICE) design, this approach is more effective under heavy ion irradiation of higher LET, in the presence of enough taps to ensure the rapid recovery of well potential. Besides, the feasibility of this method and its effectiveness with feature size scaling down are discussed.     

配合参数对单晶炉驱动系统的影响分析

光伏产业的发展使得对硅材料的需求日益增加,同时硅单晶生产行业竞争也日趋激烈。作为生产硅单晶的重要装备,单晶炉的稳定性和可靠性关系到硅单晶生产效率的提升和成本的下降,因此其驱动系统的设计和优化成为装备制造的关键环节。本文以NVT-HG2000-V1型硅单晶生长炉的驱动系统为研究对象,用SolidWorks三维建模实现虚拟装配,采用ADAMS建立其动力学仿真模型,并对驱动系统的运动过程进行仿真模拟。采用控制变量法定量分析了铜套与升降轴的配合间隙及丝杠参数对驱动力和驱动力矩的影响规律,进而在提高硅单晶生长炉装备稳定性和可靠性方面给出合理的技术建议。结果表明,铜套与升降轴的配合间隙达到0.071 mm后能有效降低驱动系统运行所需驱动力矩,丝杠倾斜度、螺纹螺距与螺纹间摩擦系数的增大均会导致驱动系统运行所需力矩大幅增加。     

Time reversal for obstacle location in elastodynamics from acoustic recording

The Note is concerned with a feasibility study of time reversal in a non-homogeneous elastic medium, from data recorded in an acoustic medium. Our aim here is to determine the presence and some physical properties of elastic “inclusions” (unknown, not observable solid objects, characterized by their elastic properties) from partial observations of acoustic waves scattered by these inclusions. A finite element numerical method, based on a variational acousto-elastodynamics formulation, is derived and used to solve the forward, and then, the time-reversed problem. A criterion, derived from the reverse time migration framework, is introduced, to help construct images of the inclusions to be determined. Numerical illustrations on configurations that mimic the breast cancer configuration are proposed, and show that one can differentiate between two inclusions, even with different properties.     

求解矩阵方程AXB+CXD=F参数迭代法的最优参数分析

本文针对求矩阵方程AXB+CXD=F唯一解的参数迭代法，分析当矩阵A，B，C，D均是Hermite正（负）定矩阵时，迭代矩阵的特征值表达式，给出了最优参数的确定方法，并提出了相应的加速算法.     

A MODAL TESTING METHOD FOR CANTILEVER BEAM1)

基于欧拉-伯努利梁理论得到悬臂梁自由振动的振型函数。通过数值计算得出实验用的悬臂梁前五阶振型的节点位置及其与梁长的比值。考虑传感器对悬臂梁固有频率的影响,建立梁-传感器模型进行仿真分析并得出悬臂梁前五阶固有频率。基于节点位置和测点位置,在实验中选择激励点。将具体实验的结果与梁-传感器仿真模型结果进行对比,通过前五阶固有频率的误差分析,发现仿真分析结果与实验结果误差最高为 1.3%。研究完整地叙述了悬臂梁的模态测试流程,可为工程技术人员的模态测试起一定的指导作用。     

Mechanical property and deformation mechanism of gold nanowire with non-uniform distribution of twinned boundaries:A molecular dynamics simulation study

The mechanical property and deformation mechanism of twinned gold nanowire with non-uniform distribution of twinned boundaries(TBs) are studied by the molecular dynamics(MD) method. It is found that the twin boundary spacing(TBS) has a great effect on the strength and plasticity of the nanowires with uniform distribution of TBs. And the strength enhances with the decrease of TBS, while its plasticity declines. For the nanowires with non-uniform distribution of TBs, the differences in distribution among different TBSs have little effect on the Young's modulus or strength, and the compromise in strength appears. But the differences have a remarkable effect on the plasticity of twinned gold nanowire. The twinned gold nanowire with higher local symmetry ratio has better plasticity. The initial dislocations always form in the largest TBS and the fracture always appears at or near the twin boundaries adjacent to the smallest TBS. Some simulation results are consistent with the experimental results.     

Shedding vortex simulation method based on viscous compensation technology research

Owing to the influence of the viscosity of the flow field, the strength of the shedding vortex decreases gradually in the process of backward propagation. Large-scale vortexes constantly break up, forming smaller vortexes. In engineering, when numerical simulation of vortex evolution process is carried out, a large grid is needed to be arranged in the area of outflow field far from the boundary layer in order to ensure the calculation efficiency. As a result, small scale vortexes at the far end of the flow field cannot be captured by the sparse grid in this region, resulting in the dissipation or even disappearance of vortexes. In this paper, the effect of grid scale is quantified and compared with the viscous effect through theoretical derivation. The theoretical relationship between the mesh viscosity and the original viscosity of the flow field is established, and the viscosity term in the turbulence model is modified. This method proves to be able to effectively improve the intensity of small-scale shedding vortexes at the far end of the flow field under the condition of sparse grid. The error between the simulation results and the results obtained by using fine mesh is greatly reduced, the calculation time is shortened, and the high-precision and efficient simulation of the flow field is realized.     

水化硅酸钙纳米压痕分子动力学模拟方法优化

针对水化硅酸钙纳米压痕模型忽视了压头与基底之间相互作用的问题，由尺寸差异引起的金刚石压头难以计算的问题，以及Wittmann模型无法得到实际接触面积的问题，提出了新的模型与计算方法．结合分子动力学方法，采用金刚石压头-Wittmann模型基底的组合方式构建无定形态水化硅酸钙纳米压痕试验模型．在建模阶段，考虑到压头模型与基底模型粒子间尺寸差异，提出了等比例替换模型，通过公式推导并就不同尺寸模拟结果验证了等比例替换模型的可行性．在计算阶段，提出了局部前处理的弛豫方法进行模拟．确定最大荷载位置处的接触面积为546 nm2，进而求出水化硅酸钙模型硬度H为0.84 GPa、折合模量Er为30.52 GPa．并通过纳米压痕试验，验证了模拟结果的准确性，证明了模型的科学性，对今后水化硅酸钙(C-S-H)纳米层面的模拟具有重要借鉴意义．     

移动加热器法生长碲锌镉晶体的组分输运与界面形貌研究

移动加热器法(THM)生长碲锌镉晶体时,界面稳定性对晶体生长的质量有很大影响。本文基于多物理场有限元仿真软件Comsol建立了THM生长碲锌镉晶体的数值模拟模型,讨论了Te边界层与组分过冷区之间的关系,对不同生长阶段的物理场、Te边界层与组分过冷区进行仿真研究,最后讨论了微重力对物理场分布的影响,并对比了微重力与正常重力下的生长界面形貌。模拟结果表明,Te边界层与组分过冷区的分布趋势是一致的,在不同生长阶段,流场中次生涡旋的位置会发生移动,从而导致生长界面的形貌随着生长的进行发生变化,同时微重力条件下形成的生长界面形貌最有利于单晶生长。因此,在晶体生长的中前期,对次生涡旋位置的控制和对组分过冷的削弱,是THM生长高质量晶体的有效方案。     

托卡马克中局域磁扰动引起的高能量离子损失研究

基于单粒子导心运动代码ORBIT，采用测试粒子模拟方法，研究了托卡马克等离子体内部不同径向位置处局域磁场扰动对高能量离子的损失的影响。研究表明，在局域磁扰动主要分布在某磁面附近、其环向具有类似纹波场形式下，可造成一些靠近等离子体中心区域的高能量离子损失，但对靠近等离子边界的离子损失影响相对不大。这些损失的高能量离子均为捕获离子，离子的投掷角越大就越容易损失。此外，造成高能量离子最大损失率的局域场径向位置与这些损失离子的初始径向位置通常存在一定的偏移，而且这个偏移与这些离子的能量密切相关。当局域场出现在某些位置时，能量较低的离子会有一定的损失，能量较高的离子反而不会损失。