密度泛函理论方法研究填料表面对聚合物摩擦化学的影响

采用超声分散法制备出氧化铝、高岭土、氧化硅/聚四氟乙烯复合材料, 使用线性往复摩擦磨损试验机对比三种复合材料的摩擦学性能. 结果表明 质量分数10%的氧化铝、高岭土能将聚四氟乙烯的磨损率降低约4个数量级, 而氧化硅仅能降低约3个数量级. 对金属对偶表面形成的转移膜的形貌和化学成分进行分析发现 氧化铝、高岭土/聚四氟乙烯在金属对偶面上形成了高度羧酸盐化的转移膜. 用密度泛函理论对三种填料表面上碳氟分子吸附过程进行模拟, 结果显示氧化铝、高岭土表面的路易斯酸性位点促进了碳氟分子的脱氟过程, 产生了更多的羧酸螯合物的中间产物; 氧化硅缺少路易斯酸性位点, 因此不能促进高度羧酸盐化的转移膜形成.     

气相输运沉积制备c轴择优取向的碘化铋薄膜

铋基卤化物材料因其无毒和优良的光电性能而显示出巨大的应用潜力。BiI₃作为一种层状重金属半导体,已被用于X射线检测、γ射线检测和压力传感器等领域,最近其作为一种薄膜太阳能电池吸收材料备受关注。本文采用简单的气相输运沉积(VTD)法,以BiI₃晶体粉末作为蒸发源,在玻璃基底上得到高质量c轴择优取向的BiI₃薄膜。并通过研究蒸发源温度和沉积距离对薄膜物相和形貌的影响,分析了BiI₃薄膜择优生长的机理。结果表明VTD法制备的BiI₃薄膜属于三斜晶系,其光学带隙为~1.8 eV。沉积温度对薄膜的择优取向有较大影响,在沉积温度低于270 ℃时,沉积的薄膜具有沿c轴择优取向生长的特点,超过此温度,c轴择优取向生长消失。在衬底温度为250 ℃、沉积距离为15 cm时制备的薄膜结晶性能最好,晶体形貌为片状八面体。     

基于抛光基材的热蒸镀铜箔生长高平整单层石墨烯薄膜

在石墨烯的化学气相沉积工艺中,铜箔是决定石墨烯薄膜质量的重要因素。传统铜箔由于制备工艺的限制,存在大量的缺陷,导致石墨烯薄膜的成核密度较高。本工作选用抛光铝板、抛光不锈钢板、微晶玻璃和SiO₂/Si作为基材,用热蒸镀法制备了不同粗糙度的铜箔,并详细讨论了以该系列铜箔生长高平整度石墨烯薄膜的条件及铜箔对石墨烯薄膜品质的影响。实验结果表明,铜箔以(111)取向为主,与基材分离后,表面具有纳米级平整度。在生长石墨烯后,从SiO₂/Si剥离的铜箔成核密度是4种基材中最小的。同时,从SiO₂/Si剥离的铜箔晶体结构变化最不明显,具有良好的结晶性,表面几乎不存在铜晶界缺陷。当压强为3 000 Pa,氢气和甲烷流速分别为300 mL/min和0.5 mL/min时,可以获得约1 mm横向尺寸的石墨烯单晶晶畴。     

新型暂堵酸化用自降解暂堵剂的制备及现场应用

针对传统暂堵酸化用暂堵剂颗粒耐酸性差、降解性差和除堵工艺复杂等问题，本研究通过水溶液自由基聚合法制备了一种新型的自降解暂堵剂CQZDJ。考察了单体加量、交联剂加量、引发剂加量对CQZDJ凝胶强度和降解性的影响；通过FT-IR、TGA、SEM对其结构进行表征；并对其降解机理进行了探讨；最后在长8区块的环平81-8实验井进行了现场实践。结果表明：CQZDJ凝胶强度及降解时间与单体加量、交联剂加量、引发剂加量成正比关系，且降解时间可控；降解性实验表明CQZDJ在(1%~10%)HCl溶液、水、（2%~10%）NaCl溶液中均可在4 d内完全降解，具备良好的降解性能，对地层伤害小；SEM照片显示CQZDJ的降解过程是从初始三维网状结构逐渐崩解为层状结构，最终降解为无规则线性小分子链的过程；暂堵后现场流压上升6.3 MPa，日产油由3.87 t/d增产至5.22 t/d，实现了储层的有效改造，增产效果显著。      

Crown evolution kinematics of a camellia oil droplet impacting on a liquid layer

The phenomenon of droplet impact on an immiscible liquid is encountered in a variety of scenarios in nature and industrial production. Despite exhaustive research, it is not fully clear how the immiscibility of the liquid on which a droplet impacts affects the crown evolution. The present work experimentally investigates the evolution kinematics of a crown formed by the normal impact of a camellia oil droplet on an immiscible water layer. Based on discussion of dynamic impact behaviors for three critical Weber numbers (We), the radius of the crown and its average spreading velocity are compared with those of previous theoretical models to discuss their applicability to the immiscible liquid. The evolution kinematics (morphology and velocity) are analyzed by considering the effects of the We and layer thickness. Furthermore, the ability of crown expansion in radial and vertical directions is characterized by a velocity ratio. The results show that our experimental crown radius still follows a square-root function of evolution time, which agrees with the theoretical predictions. The dimensionless average spreading velocity decreases with We and follows a multivariate power law, while the dimensionless average rising velocity remains constant. The velocity ratio is shown to linearly increase with We, demonstrating that the rising movement in crown evolution gradually enhances with We. These results are helpful for further investigation on the droplet impact on an immiscible liquid layer.     

碳纳米管膜的高温纯化研究

为了获得纯度更高的碳纳米管膜, 保证材料发热稳定性, 需要对通过化学气相沉积法得到的碳纳米管膜进行二次纯化. 通过使用高温纯化炉, 在真空状态下, 从1700℃到3200℃分7挡温度对碳纳米管进行纯化, 并对其含碳量和方块电阻进行比较. 结果表明, 高温纯化后的碳纳米管膜含碳量从95.0%提高到99.9%, 解决了含碳量低的问题. 同时, 在高温纯化中发现碳纳米管膜方块电阻从纯化前3Ω降低到0.5Ω, 方块电阻的降低对碳纳米管膜具有十分重要的意义, 同样对碳纳米管膜后续产品的开发也有重要作用.     

掺锗提高VO2薄膜的相变温度机理研究

二氧化钒(VO₂)作为一种长久以来备受关注的新型可逆相变材料,发展潜力巨大,其相变温度(T_MIT)的调控一直是研究热点。本文主要利用锗离子作为掺杂离子探索其对VO₂薄膜T_MIT的影响,并尝试解释其内部作用机理。在约1 cm²大小抛光的氧化铝薄片上沉积了一系列含不同比例锗离子VO₂薄膜。研究发现锗离子作为掺杂离子确实有利于T_MIT的提高(本课题T_MIT最大可达84.7 ℃)。T_MIT提高的主要原因是锗离子的引入能够强化单斜态V-V二聚体的稳定性,进而增强单斜态的稳定性,使得低温单斜态向四方金红石态转变更加困难。     

Numerical study on thermal performance of TiO2, Fe3O4 and NiCr/engine oil in an inclined wavy pip

The essential intention of the existing article is to illustrate the effect of wall properties on flow and thermal behavior, through a sinusoidal inclined wavy pipe. To succeed this phenomena we assume a sinusoidal pipe consist of wavy surface, whose walls traveling down to its borders and located at an inclined position, moreover titanium dioxide (TiO₂), ferrosoferric oxide (Fe₃O₄) and nichrome (80% Ni and 20% Cr) are considered as nano-particles and unused engine oil is assumed as a base fluid. The arising mathematical equations for thermal and flow ratio with wall slip impact are solved by mathematica. Also, evaluate graphically the thermal and flow behavior of nanofluids for multi values of solid volume fractions (η), rigidity parameter (M₁), stiffness parameter (M₂), viscous damping parameter (M₃), Grashof number (G_r), slip parameter (β) and heat generation parameter (H) also discuss the streamlines for different values of solid volume fraction.     

On the Integration of Dielectrometry into Electrochemical Impedance Spectroscopy to Obtain Characteristic Properties of a Dielectric Thin Film

We demonstrate a novel impedimetric approach providing unprecedented insight into characteristic properties of dielectric thin films covering electrode surfaces. The concept is based on the joint interpretation of electrochemical impedance spectroscopy (EIS) together with dielectrometry (DEM) whose informative value is mutually interconnected. The advantage lies in the synergistic compensation of individual shortcomings adversely affecting conventional impedimetric analysis strategies relying exclusively on either DEM or the traditional EIS approach, which in turn allows a reliable determination of thickness and permittivity values. The versatility of the method proposed is showcased by an in-situ growth-monitoring of a nanoporous, crystalline thin film (HKUST-1) on an interdigitated electrode geometry.     

光纤基底TiNi形状记忆合金薄膜制备工艺

将TiNi基记忆合金薄膜与光纤相结合可制成智能化、集成化且成本经济的微机电系统和微传感器件.本文采用磁控溅射法在二氧化硅光纤基底上制备TiNi记忆合金薄膜,系统讨论了溅射工艺参数以及后续退火处理对薄膜质量的影响.采用自研制光纤镀膜掩膜装置在直径为125μm的光纤圆周表面上形成均匀薄膜.实验表明:在靶基距、背底真空度、Ar气流量和溅射时间一定的条件下,溅射功率存在最佳值;溅射压强较大时,薄膜沉积速率较低,但薄膜表面粗糙度较小.进行退火处理后,薄膜形成较良好的晶体结构,Ti_49.09Ni_50.91薄膜中马氏体B19′相和奥氏体B2相共存,但以B19′为主.根据本文研究结果,在玻璃光纤基底上制备高质量的TiNi基记忆合金薄膜是可实现的,本工作为下一步研制微机电系统和微型传感器做了基础准备.