富晶格位错的多孔铋纳米花高效电还原二氧化碳制甲酸盐※

二氧化碳转化已成为现今世界研究的热点. 本工作采用原位电化学转化的策略, 将简单溶剂热法合成的层状甲酸氧铋纳米花(BiOCOOH NFs)还原为带有大量晶格位错的多孔铋纳米花(p-Bi NFs). 研究结果表明, p-Bi NFs电催化二氧化碳转化为甲酸盐具有较小的过电位(436 mV). 在–1.8 V(相对饱和甘汞电极, vs. SCE)时, 甲酸盐的分电流密度(j_formate)高达24.4 mA•cm^-2, 法拉第效率(FE_formate)为96.7%, 且在超过500 mV的宽电位窗口内FE_formate超过90%, 并具有很好的稳定性. 该催化剂的高催化性能可归因于前驱体晶格坍塌和重构而形成特殊的多孔粗糙的微纳多级结构, 其表面富含晶格位错和缺陷等高本征活性位, 且具有较强的电子传递能力. 本研究为设计合成高性能的电催化二氧化碳还原产甲酸催化剂提供了新的思路.     

Some preliminary observations on a defect Navier–Stokes system

Some implications of the simplest accounting of defects of compatibility in the velocity field on the structure of the classical Navier–Stokes equations are explored, leading to connections between classical elasticity, the elastic theory of defects, plasticity theory, and classical fluid mechanics.     

简支及悬臂箱梁在角隅轴向荷载作用下的翼板纵向应力

基于能量变分原理，拟定轴向荷载作用下箱梁的纵向位移函数，得到关于翼板剪切变形引起的位移差函数的基本微分方程，继而推导出箱梁翼板纵向应力表达式，并首次得出角隅轴向荷载作用下翼板出现应力不均匀分布的荷载及边界条件。通过对一模型箱梁进行计算，并与通用有限元软件ANSYS壳单元计算结果进行比较，验证了该方法和所推导公式的正确性。研究结果表明，当作用于简支箱梁截面角隅处的轴向荷载（合力无偏心）为集中或分布荷载时，翼板不产生纵向应力不均匀现象；当作用于悬臂箱梁截面角隅处的轴向荷载（合力无偏心）为集中荷载时，翼板不产生纵向应力不均匀现象，而当荷载轴向分布时，翼板将产生纵向应力不均匀现象。实际工程中，横力弯曲使悬臂箱梁产生剪力滞效应，这种效应会与轴向分布荷载产生的效应叠加，设计时对此应予以充分考虑。     

晶格畸变检测仪研究碳化硅晶片中位错缺陷分布

利用晶格畸变检测仪研究了SiC晶片位错分布情况,通过对熔融KOH腐蚀后的SiC晶片进行全片或局部扫描,从而得到完整SiC晶片或局部区域的位错分布。与LEXT OLS4000 3D激光共聚焦显微镜扫描腐蚀图进行比较,晶格畸变检测仪扫描腐蚀图可以将晶片上位错腐蚀坑信息完全呈现出来,且根据腐蚀坑呈现的颜色及尺寸大小,可以分辨出三种不同类型的穿透型位错,其中黑点腐蚀坑对应螺位错,小尺寸白点腐蚀坑对应刃位错,大尺寸白点腐蚀坑对应混合型位错。采用晶格畸变测试仪研究了4英寸(101.6 mm)N型4H-SiC晶体不同生长时期的位错密度及分布情况,结果表明随着晶体生长,位错密度呈现逐渐降低的趋势,生长后期晶片的总位错密度降为生长前期晶片总位错密度的近1/3,有利于反馈位错缺陷在SiC晶体生长过程中的延伸和转化特性信息,以指导SiC晶体生长工艺改进。     

6英寸低位错锗单晶生长热场设计

锗片作为衬底材料已在空间太阳电池领域得到广泛的应用,新型锗基空间太阳能电池对锗片的需求由4英寸(1英寸=2.54 cm)提高到6英寸后,低位错锗单晶的生长难度增大。本文设计开发了一种适用于直拉法生长大尺寸、低位错锗单晶的双加热器热场系统,模拟研究了不同形状主加热器的热场分布,从而得到最优的热场环境。研究发现:渐变长度为L/h=1/2、渐变率α为65°的渐变型主加热器热场结构能够获得最佳的热场分布,有利于低位错单晶的生长。经验证,生长的锗单晶热应力较低,位错密度在310～450 cm^-2范围内。     

Interaction of a screw dislocation with an interfacial edge crack in a two-phase piezoelectric material

The interaction of a screw dislocation with an interfacial edge crack in a two-phase piezoelectric medium is investigated. Closed-form solutions of the elastic and electrical fields induced by the screw dislocation are derived using the conformal mapping method in conjunction with the image principle. Based on the electroelastic fields derived, the stress and electric displacement intensity factors, the image force acting on the dislocation are given explicitly. We find that the stress and electric displacement intensity factors depend on the effective electroelastic material constants. In the case where one of two phases is purely elastic, the stress intensity factor and image force are plotted to illustrate the influences of electromechanical coupling effect, the position of the dislocation and the material properties on the interaction mechanism. The project supported by the Doctoral Foundation of Hebei Province (B2003113)     

The indenter tip radius effect in micro- and nanoindentation hardness experiments.

Nix and Gao established an important relation between the microindentation hardness and indentation depth. Such a relation has been verified by many microindentation experiments (indentation depths in the micrometer range), but it does not always hold in nanoindentation experiments (indentation depths approaching the nanometer range). Indenter tip radius effect has been proposed by Qu et al. and others as possibly the main factor that causes the deviation from Nix and Gao's relationship. We have developed an indentation model for micro- and nanoindentation, which accounts for two indenter shapes, a sharp, conical indenter and a conical indenter with a spherical tip. The analysis is based on the conventional theory of mechanism-based strain gradient plasticity established from the Taylor dislocation model to account for the effect of geometrically necessary dislocations. The comparison between numerical result and Feng and Nix's experimental data shows that the indenter tip radius effect indeed causes the deviation from Nix-Gao relation, but it seems not be the main factor. The project supported by the National Natural Science Foundation of China (10121202) and the Ministry of Education of China (20020003023)     

Surface versus bulk nucleation of dislocations during contact

The indentation of single crystals by a periodic array of flat rigid contacts is analyzed using discrete dislocation plasticity. Plane strain analyses are carried out with the dislocations all of edge character and modeled as line singularities in a linear elastic solid. The limiting cases of frictionless and perfectly sticking contacts are considered. The effects of contact size, dislocation source density, and dislocation obstacle density and strength on the evolution of the mean indentation pressure are explored, but the main focus is on contrasting the response of crystals having dislocation sources on the surface with that of crystals having dislocation sources in the bulk. When there are only bulk sources, the mean contact pressure for sufficiently large contacts is independent of the friction condition, whereas for sufficiently small contact sizes, there is a significant dependence on the friction condition. When there are only surface dislocation sources the mean contact pressure increases much more rapidly with indentation depth than when bulk sources are present and the mean contact pressure is very sensitive to the strength of the obstacles to dislocation glide. Also, on unloading a layer of tensile residual stress develops when surface dislocation sources dominate.     

Interaction between an edge dislocation and a circular inclusion with an inhomogeneously imperfect interface

This research presents an analytical study of the interaction problem of an edge dislocation with a circular inclusion with a circumferentially inhomogeneously imperfect interface. The interface, which is modeled as a spring (interphase) layer with vanishing thickness, is characterized by that in which there is a displacement jump across the interface in the same direction as the corresponding tractions, and the same degree of imperfection is realized in both the normal and tangential directions. Furthermore, the interface parameter is nonuniform along the interface. In order to arrive at an elementary form solution, we introduce a conformal mapping function. Then the stress field as well as the Peach–Koehler force acting on the edge dislocation can be obtained from the derived complex potentials. Calculations demonstrate that the nonuniform interface parameter has a significant influence on the stress field.     

EFFECTS OF DISLOCATION CONFIGURATION, CRACK BLUNTING AND FREE SURFACES ON THE TRIGGERING LOAD OF DISLOCATION SOURCES

The effects of dislocation configuration,crack blunting and free surfaces on the triggering load of dislocation sources in the vicinity of a crack or a wedge tip subjected to a tensile load in the far field are investigated.An appropriate triggering criterion for dislocation sources is proposed by considering the configurational forces acting on each dislocation.The triggering behaviors of dislocation sources near the tips of a crack and a wedge are compared.It is also found that the blunting of crack tip and the presence of free surfaces near the crack or the wedge have considerable influences on the triggering load of dislocation sources.This study might be of significance to gaining a deeper understanding of the brittle-to-ductile transition of materials.