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Yoshimichi Shimomura Prof. Dr. Kazunobu Igawa Dr. Shunsuke Sasaki Dr. Noritaka Sakakibara Prof. Dr. Raita Goseki Prof. Dr. Gen-ichi Konishi 《Chemistry (Weinheim an der Bergstrasse, Germany)》2022,28(52):e202201884
To design ultrabright fluorescent solid dyes, a crystal engineering strategy that enables monomeric emission by blocking intermolecular electronic interactions is required. We introduced propylene moieties to distyrylbenzene (DSB) as bridges between the phenyl rings either side of its C=C bonds. The bridged DSB derivatives formed compact crystals that emit colors similar to those of the same molecules in dilute solution, with high quantum yields. The introduction of flexible seven-membered rings to the DSB core produced moderate distortion and steric hindrance in the DSB π-plane. However, owing to this strategy, it was possible to control the molecular arrangement with almost no decrease in the crystal density, and intermolecular electronic interactions were suppressed. The bridged DSB crystal structure differs from other DSB derivative structures; thus, bridging affords access to novel crystalline systems. This design strategy has important implications in many fields and is more effective than the conventional photofunctional molecular crystal design strategies. 相似文献
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分子张力作为空间设计的重要组成部分正成为调控有机半导体的重要手段。由于分子内产生的拉伸张力、扭曲/弯曲张力以及空间张力而导致p轨道排布重组和构型构象结构发生变化,最近各种几何与拓扑结构的高张力有机半导体材料相继被报道,这使得高张力有机半导体材料成为有机电子领域研究的焦点。为了进一步梳理分子张力在有机半导体材料中扮演的角色与价值,该综述从分子张力的类型、实验与理论量化以及可视化出发,总结了高张力共轭芳烃的分子设计策略、与其光电性能分子张力之间的关系,以及这类新兴材料在光电领域的应用。最后,对高张力共轭芳烃的研究前景进行了展望,阐述了该类材料所面临的机遇与挑战。 相似文献
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Mechanically flexible optoelectronic devices such as flexible displays, touch-screens, wearable electronics and solar cells are attracting significant commercial interest. In these devices, a transparent conductor is an essential element that delivers or collects the electrical current to the active material while it allows light to enter or exit from the device. The transparent conductor is composed of a transparent conductive film and a metallic grid providing electrical conduction over the large area. In this article, we review the established processes used by the industry as well as emerging solution-based methods for processing metal grids. Furthermore, we review the issues and potentials of these emerging processes facing for large-area deployment. In the final section, we evaluate three applications of flexible transparent conductors in: perovskite-based solar cells, organic light emitting diodes and electrochromic windows. 相似文献
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有机-无机杂化卤化物钙钛矿太阳能电池(perovskite solar cells, PSCs)由于其成本低廉、制备工艺简单、光电转换率高等优点引起了越来越多的关注,在下一代半导体光伏技术中显示出巨大的发展潜力。然而PSCs器件在商业化生产应用之前,必须解决某些关键问题,例如器件在湿度、光照和过热条件下缺乏稳定性,性能会急剧衰退。层状二维(two-dimensional, 2D)钙钛矿由于其优异的环境稳定性而受到研究人员的广泛关注。通过引入不同种类的疏水性大体积有机铵阳离子可以在钙钛矿体内形成稳定的2D结构。然而,由于绝缘有机间隔阳离子的存在,使其电荷输运能力受阻并影响光电转换性能。本文根据不同种类2D钙钛矿光伏器件的发展进程,总结了影响2D钙钛矿结构和性能的关键问题,如晶体垂直取向设计、量子阱调控和有机层间隔阳离子替换工程等。最后对2D PSCs的未来发展进行展望。 相似文献
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变形镜在长期工作的过程中,压电陶瓷驱动器因累积疲劳效应会导致其失效,从而导致校正性能的降低。从变形镜的影响函数出发,将失效驱动器的电压置零,采用有限元方法建立变形镜疲劳失效模型,重点分析畸变波前的形态分布、入射光束的类型和驱动器的排布方式等对校正能力的影响。实验结果表明,在部分驱动器失效的情况下,变形镜应当根据高斯型随机畸变波前的形态分布进行失效分析。从低频部分来看,在第1圈驱动器失效的情况下,变形镜对三种入射光束的校正效果几乎相同,当驱动器失效位置在其他圈数时,变形镜对高斯光束的校正效果最差;从高频部分来看,在不同位置驱动器失效的情况下,变形镜对平顶高斯光束的校正效果最佳。 相似文献
8.
Enhancing light absorption for organic solar cells using front ITO nanograting and back ultrathin Al layer 下载免费PDF全文
《中国物理 B》2021,30(10):104207-104207
To address the discrepancy between carrier collection and light absorption of organic solar cells caused by the limited carrier mobility and optical absorption coefficient for the normally employed organic photoactive layers, a light management structure composed of a front indium tin oxide(ITO) nanograting and ultrathin Al layer inserted in between the photoactive layer and the electron transport layer(ETL) is introduced. Owing to the antireflection and light scattering induced by the ITO nanograting and the suppression of light absorption in the ETL by the inserted Al layer, the light absorption of the photoactive layer is significantly enhanced in a spectral range from 400 nm to 650 nm that also covers the main energy region of solar irradiation for the normally employed active materials such as the P3HT:PC_(61) BM blend. The simulation results indicate that comparing with the control device with a planar configuration of ITO/PEDOT:PSS/P3HT:PC_(61) BM(80-nm thick)/Zn O/Al, the short-circuit current density and power conversion efficiency of the optimized light management structure can be improved by 32.86% and 34.46%. Moreover, good omnidirectional light management is observed for the proposed device structure. Owing to the fact that the light management structure possesses the simple structure and excellent performance, the exploration of such a structure can be believed to be significant in fabricating the thin film-based optoelectronic devices. 相似文献
9.
Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology 下载免费PDF全文
Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al2O3 gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption. 相似文献
10.
Tatsuhiko Kashimura Tomoya Ikezaki Yusuke Ohta Satoshi Yabushita 《Journal of computational chemistry》2019,40(2):482-499
One of the most spectacular yet unsolved problems for the ICN -band photodissociation is the non-statistical spin-rotation F1 = N + 1/2 and F2 = N − 1/2 populations for each rotation level N of the CN fragment. The F1/F2 population difference function f(N) exhibits strong N and λ dependences with an oscillatory behavior. Such details were found to critically depend on the number of open-channel product states, namely, whether both I (2P3/2) and I (2P1/2) are energetically available or not as the dissociation partner. First, in the asymptotic region, the exchange and dipole-quadrupole inter-fragment interactions were studied in detail. Then, as the diabatic basis, we took the appropriate symmetry adapted products of the electronic and rotational wavefunctions for the F1 and F2 levels at the dissociation limits. We found that the adiabatic Hamiltonian exhibits Rosen–Zener–Demkov type nonadiabatic transitions reflecting the switch between the exchange interaction and the small but finite spin-rotation interaction within CN at the asymptotic region. This non-crossing type nonadiabatic transition occurs with the probability 1/2, that is, at the diabatic limit through a sudden switch of the quantization axis for CN spin S from the dissociation axis to the CN rotation axis N . We have derived semiclassical formulae for f(N) and the orientation parameters with a two-state model including the 3A′ and 4A′ electronic states, and with a four-state model including the 3A′ through 6A′ electronic states. These two kinds of interfering models explain general features of the F1 and F2 level populations observed by Zare's group and Hall's group, respectively. © 2018 Wiley Periodicals, Inc. 相似文献