对自由落体的诺维科夫时间与牛顿绝对时间关系讨论

文章首先将史瓦西黑洞场中自由下落质点的固有时(诺维科夫坐标时)公式,由自然单位制化成了国际单位制中的形式.然后,根据牛顿第二定律和万有引力定律,推导出了自由下落质点经历的绝对时间公式,进而证明了广义相对论中自由落体经历的固有时,恰好等于牛顿力学给出的绝对时间.最后,对自由下落质点在黑洞内外经历的时间进行了特例计算.     

Accurate correction of arbitrary spin fermion quantum tunneling from non-stationary Kerr-de Sitter black hole based on corrected Lorentz dispersion relation

According to a corrected dispersion relation proposed in the study on the string theory and quantum gravity theory, the Rarita-Schwinger equation was precisely modified, which resulted in the Rarita-Schwinger-Hamilton-Jacobi equation. Using this equation, the characteristics of arbitrary spin fermion quantum tunneling radiation from non-stationary Kerr-de Sitter black holes were determined. A number of accurately corrected physical quantities, such as surface gravity, chemical potential, tunneling probability, and Hawking temperature, which describe the properties of black holes, were derived. This research has enriched the research methods and enabled increased precision in black hole physics research.     

Wave-based analysis of dual acoustic black holes for anechoic termination of shock testing devices

Shock testing is an important issue for the survivability of an equipment under shock environment in aerospace and military industries. One of the problems faced in conventional shock testing devices is the need for redesigning of the geometry whenever the responses to different shock environments are tested. To circumvent the redesigning processes, a structure with two ‘acoustic black holes (ABHs)’ on both ends, referred to as the beam with dual ABHs, is proposed as a shock testing device. The beam with dual ABHs is capable of simulating diverse shock environments by controlling the applied force because it can be regarded as an infinite beam at high frequency range with the aid of the anechoic terminations by the ABHs. To systematically investigate the beam with dual ABHs, we develop a wave-based method that uses the reflection matrix of an ABH to perform free and forced vibration analyses. From the analyses on frequency response function and shock response spectrum of the beam with dual ABH, it is suggested that the beam with dual ABHs is feasible as a semi-permanent shock testing device.     

Entropy of higher-dimensional charged Gauss–Bonnet black hole in de Sitter space

The fundamental equation of the thermodynamic system gives the relation between the internal energy, entropy and volume of two adjacent equilibrium states. Taking a higher-dimensional charged Gauss–Bonnet black hole in de Sitter space as a thermodynamic system, the state parameters have to meet the fundamental equation of thermodynamics. We introduce the effective thermodynamic quantities to describe the black hole in de Sitter space. Considering that in the lukewarm case the temperature of the black hole horizon is equal to that of the cosmological horizon, we conjecture that the effective temperature has the same value. In this way, we can obtain the entropy formula of spacetime by solving the differential equation. We find that the total entropy contains an extra term besides the sum of the entropies of the two horizons. The corrected term of the entropy is a function of the ratio of the black hole horizon radius to the cosmological horizon radius, and is independent of the charge of the spacetime.     

基于器件结构提高TADF-OLED器件的发光性能

为了提高以TADF材料作为主体、天蓝色荧光材料作为客体的混合薄膜的OLED器件光电性能,我们调整了器件结构,使主体材料发挥其优势。制备了基本结构为ITO/NPB(40 nm)/DMAC-DPS∶x%BUBD-1(40 nm)/Bphen(30 nm)/LiF(0.5 nm)/Al的OLED器件。研究了主-客体材料在不同掺杂浓度下的OLED器件的光电特性。为了提高主体材料的利用率,在空穴传输层和发光层之间加入10 nm的DMAC-DPS作为间隔层;然后,在阳极和空穴传输层之间加入HAT-CN作为空穴注入层,形成HAT-CN/NPB结构的PN结,有效降低了器件的启亮电压(2.7 V)。测量了有无HAT-CN的单空穴器件的阻抗谱。结果表明,在最佳掺杂比例(2%)下,器件的外量子效率(EQE)达到4.92%,接近荧光OLED的EQE理论极限值;加入10 nm的DMAC-DPS作为间隔层,使得器件的EQE达到5.37%;HAT-CN/NPB结构的PN结有效地降低了器件的启亮电压(2.7 V),将OLED器件的EQE提高到5.76%;HAT-CN的加入提高了器件的空穴迁移率,降低了单空穴器件的阻抗。TADF材料作为主体材料在提高OLED器件的光电性能方面具有很大的潜力。     

形状记忆合金椭圆孔口问题的有限单元法

基于Lagoudas形状记忆合金(SMA)三维本构模型,假设材料为各向同性,推导了SMA平面应力状态的增量型本构方程,继而编写了ABAQUS用户自定义材料(UMAT)子程序,研究了在双向拉伸情况下,外载荷、温度、椭圆孔口长短轴之比对超弹性SMA椭圆孔口板中应力诱发马氏体相变区的影响。数值结果表明:应力诱发马氏体相变首先发生在椭圆孔口长轴端点部位,在外加载荷作用下逐渐扩展到板内,并由内向外形成马氏体相区、相变混合区和奥氏体相区;SMA板内应力诱发马氏体完全相变区面积与施加外载荷成正相关,与温度成负相关;随着椭圆孔口长短轴之比增大,SMA板内应力诱发马氏体完全相变区面积呈现出先减小后增大的趋势;拉应力差值相同时,相较于拉应力沿椭圆孔口长轴方向较大的情况,当拉应力沿椭圆孔口短轴方向较大时,SMA板内完全相变区面积较大,椭圆孔口周边应力集中现象更明显。     

One Way Traffic: Base-to-Backbone Hole Transfer in Nucleoside Phosphorodithioate

The directionality of the hole-transfer processes between DNA backbone and base was investigated by using phosphorodithioate [P(S⁻)=S] components. ESR spectroscopy in homogeneous frozen aqueous solutions and pulse radiolysis in aqueous solution at ambient temperature confirmed initial formation of G^.+-P(S⁻)=S. The ionization potential of G-P(S⁻)=S was calculated to be slightly lower than that of guanine in 5′-dGMP. Subsequent thermally activated hole transfer from G^.+ to P(S⁻)=S led to dithiyl radical (P-2S^.) formation on the μs timescale. In parallel, ESR spectroscopy, pulse radiolysis, and density functional theory (DFT) calculations confirmed P-2S^. formation in an abasic phosphorodithioate model compound. ESR investigations at low temperatures and higher G-P(S⁻)=S concentrations showed a bimolecular conversion of P-2S^. to the σ²-σ*¹-bonded dimer anion radical [-P-2S 2S-P-]⁻ [ΔG (150 K, DFT)=−7.2 kcal mol⁻¹]. However, [-P-2S 2S-P-]⁻ formation was not observed by pulse radiolysis [ΔG° (298 K, DFT)=−1.4 kcal mol⁻¹]. Neither P-2S^. nor [-P-2S 2S-P-]⁻ oxidized guanine base; only base-to-backbone hole transfer occurs in phosphorodithioate.     

Hole/Electron Transporting Materials for Nonfullerene Organic Solar Cells

Nonfullerene acceptor based organic solar cells (NF-OSCs) have witnessed rapid progress over the past few years owing to the intensive research efforts on novel electron donor and nonfullerene acceptor (NFA) materials, interfacial engineering, and device processing techniques. Interfacial layers including electron transporting layers (ETL) and hole transporting layers (HTLs) are crucially important in the OSCs for facilitating electron and hole extraction from the photoactive blend to the respective electrodes. In this review, the lates progress in both ETLs and HTLs for the currently prevailing NF-OSCs are discussed, in which the ETLs are summarized from the categories of metal oxides, metal chelates, non-conjugated electrolytes and conjugated electrolytes, and the HTLs are summarized from the categories of inorganic and organic materials. In addition, some bifunctional interlayer materials served as both ETLs and HTLs are also introduced. Finally, the prospects of ETL/HTL materials for NF-OSCs are provided.     

Charge Transfer Properties of Organic Semiconductor Molecules of Perylene Derivatives

The charge transfer rates of perylene and its four derivatives were studied at the level of B3LYP/6-31G** by density functional theory. The results showed that the perylene and its four derivatives belonged to the semiconductor molecules, which released energy when electron was injected. Therefore, they were suitable to be used as the electron injection material. The introduction of OH group can improve the electron transfer rate significantly. The formations of intramolecular hydrogen bonds were unfavorable to the hole transfer, but conducive to the electron transfer. The perylene derivatives, 2,5-3,4,5-(trifluorophenyl)ethynyl-8,11-3,4,5-trihydroxyphenyl ethynyl, designed in this article had the hole transfer rate of 1.57 cm2/V·s-1. Therefore, this kind of material will be potential hole transfer material with high transfer efficiency.